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UNISONIC TECHNOLOGIES CO., LTD
60N08
Preliminary
60 Amps, 80 Volts
N-CHANNEL POWER MOSFET
„ DESCRIPTION
The UTC 60N08 is an N-channel power MOSFET adopting UTC’s
advanced planar stripe and DMOS technology to provide designers
with perfectly high switching speed and minimum on-state resistance.
It also can withstand high energy pulse in the avalanche and
commutation modes.
The UTC 60N08 is applied in low voltage applications such as DC
motor control, automotive, and high efficiency switching for DC/DC
converters.
„ FEATURES
* 60A, 80V, RDS(ON)=0.024@ VGS=10V
* High switching speed
* 100% avalanche tested
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
60N08L-TA3-T
60N08G-TA3-T
60N08L-TF1-T
60N08G-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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60N08
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
80 V
Gate to Source Voltage
VGSS
±25 V
Continuous Drain Current
Continuous
Pulsed
ID
IDM
60 A
176 A
Avalanche Energy
Single Pulsed (Note 2)
Repetitive (Note 1)
Peak Diode Recovery dv/dt (Note 3)
EAS
EAR
dv/dt
560 mJ
8.5 mJ
6.5 V/ns
Power Dissipation
TO-220
TO-220F1
PD
100 W
70 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F1
Junction to Case
TO-220
TO-220F1
SYMBOL
θJA
θJC
RATINGS
62.5
62.5
1.25
1.77
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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60N08
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS VGS=0V, ID=250µA
ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C
IDSS
VDS=80V, VGS=0V
VDS=64V, TC=150°C
IGSS
VDS=0V ,VGS=+25V
VDS=0V ,VGS=-25V
80
V
0.07 V/°C
1 µA
10 µA
+100 nA
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=30A
VDS=30V, ID=30A (Note 4)
2.0 4.0
0.018 0.024
31
V
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
1450 1900
520 680
120 155
pF
pF
pF
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=64V, VGS=10V, ID=60A
(Note 4,5)
VDD=40V, ID=60A,
RG=25(Note 4,5)
50 65
9.3
25
16.5 45
200 410
70 150
95 200
nC
nC
nC
ns
ns
ns
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =60A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR VGS=0V, IS=60A,
QRR dIF/dt=100A/μs (Note 4)
Notes : 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=0.4mH, IAS=44A, VDD=25V, RG=25, Starting TJ=25°C
3. ISD 60A, di/dt 300A/μs, VDD BVDSS, Starting TJ=25°C
4. Pulse Test : Pulse width300μs, Duty cycle2%
5. Essentially independent of operating temperature
60
176
1.5
73
185
A
A
V
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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