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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD943/945/947
DESCRIPTION
·DC Current Gain-
: hFE= 85(Min)@ IC= 500mA
·Complement to Type BD944/946/948
APPLICATIONS
·Designed for use in audio output stages and general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
BD943
22
VCBO
Collector-Base Voltage BD945
32
BD947
45
BD943
22
VCEO
Collector-Emitter Voltage BD945
32
BD947
45
VEBO
Emitter-Base Voltage
5
IC Collector Current-Continuous
5
ICM Collector Current-Peak
8
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
1
40
150
Tstg Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.12 /W
Rth j-a Thermal Resistance,Junction to Ambient 70 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD943/945/947
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD943
BD945
BD947
IC= 30mA ; IB= 0
VCE(sat)
Collector-Emitter
Saturation Voltage
BD943/945 IC= 2A; IB= 0.2A
BD947
IC= 3A; IB= 0.3A
VBE(on)
ICBO
ICEO
Base-Emitter
On Voltage
BD943/945 IC= 2A; VCE= 1V
BD947
IC= 3A; VCE= 1V
Collector Cutoff Current
VCB= VCBOmax; IE= 0
VCB= VCBOmax; IE= 0,TJ=150
BD943
VCE= 15V; IB= 0
Collector
Cutoff Current
BD945
VCE= 20V; IB= 0
BD947
VCE= 25V; IB= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 10mA ; VCE= 5V
hFE-2
DC Current Gain
IC= 500mA ; VCE= 1V
hFE-3
DC Current Gain
BD943/945
BD947
IC= 2A ; VCE= 1V
hFE-4
DC Current Gain--Only For BD947 IC= 3A ; VCE= 1V
fT Current-Gain—Bandwidth Product IC= 250mA ; VCE= 1V
MIN TYP. MAX UNIT
22
32 V
45
0.5
V
0.7
1.1
V
1.3
0.05
1.0
mA
0.1 mA
0.2 mA
25
85 475
50
40
30
3 MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark