2SA2222SG.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SA2222SG 데이타시트 다운로드

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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2222SG
DESCRIPTION
·Large current capacitance
·High-speed switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·relay drivers,lamp drivers,motor drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50 V
VCEO
Collector-Emitter Voltage
-50 V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous -10 A
ICM Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25
Collector Power Dissipation
@Ta=25
TJ Junction Temperature
-13 A
25
W
2
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

No Preview Available !

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2222SG
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -300mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -6A; IB= -300mA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -100uA; IC= 0
ICBO Collector Cutoff Current
VCB= -40V; IE= 0
IEBO Emitter Cutoff Current
VEB= -4V; IC= 0
hFE DC Current Gain
IC= -0.27A; VCE= -2V
COB Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT Current-Gain—Bandwidth Product IC= -1A; VCE= -10V
MIN TYP. MAX UNIT
-0.5 V
-1.2 V
-50 V
-6 V
-10 μA
-10 μA
150 450
115 pF
230 MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark