BAS70-07W.pdf 데이터시트 (총 24 페이지) - 파일 다운로드 BAS70-07W 데이타시트 다운로드

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Silicon Schottky Diode
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
BAS70-04S: For orientation in reel see
package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q1011)
BAS70.../BAS170W
BAS170W
BAS70-02L
BAS70-02W
BAS70-02V

BAS70-06
BAS70-06W
!
, ,

BAS70
!

BAS70-07
BAS70-07W
"
,
!
,

BAS70-04
BAS70-04W
!
, ,

1BAS70-02L is not qualified according AEC Q101
BAS70-04S
$#
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, ,

,! ,"
!
BAS70-05
BAS70-05W
!
, ,

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Type
BAS170W
BAS70
BAS70-02L
BAS70-02V
BAS70-02W*
BAS70-04
BAS70-04S
BAS70-04W
BAS70-05
BAS70-05W
BAS70-06
BAS70-06W
BAS70-07
BAS70-07W
* Not for new design
Package
SOD323
SOT23
TSLP-2-1
SC79
SCD80
SOT23
SOT363
SOT323
SOT23
SOT323
SOT23
SOT323
SOT143
SOT343
Configuration
single
single
single, leadless
single
single
series
dual series
series
common cathode
common cathode
common anode
common anode
parallel pair
parallel pair
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Non-repetitive peak surge forward current
t 10ms
VR
IF
IFSM
Total power dissipation
BAS70, BAS70-07, TS 72 °C
BAS70-02L, TS 117 °C
BAS70-02W, -02V, TS 107 °C
BAS70-04, BAS70-06, TS 48 °C
BAS70-04S/W/-06W, BAS170W, TS 97 °C
BAS70-05, TS 22 °C
BAS70-05W, TS 90 °C
BAS70-07W, TS 114 °C
Ptot
Junction temperature
Operating temperature range
Storage temperature
TJ
Top
TStg
BAS70.../BAS170W
LS(nH)
1.8
1.8
0.4
0.6
0.6
1.8
1.6
1.4
1.8
1.4
1.8
1.4
2
1.8
Marking
white 7
73s
F
c
73
74s
74s
74s
75s
75s
76s
76s
77s
77s
Value
70
70
100
250
250
250
250
250
250
250
250
150
-55 ... 125
-55 ... 150
Unit
V
mA
mW
°C
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Thermal Resistance
Parameter
Junction - soldering point1)
BAS70, BAS70-07
BAS70-02L
BAS70-02W, -02V
BAS70-04, BAS70-06
BAS70-04S/W, BAS70-06W
BAS70-05
BAS70-05W
BAS70-07W
BAS170W
Symbol
RthJS
BAS70.../BAS170W
Value
310
130
170
410
210
510
240
145
190
Unit
K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 10 µA
Reverse current
VR = 50 V
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 15 mA
Forward voltage matching2)
IF = 10 mA
V(BR)
IR
VF
VF
70 -
-V
- - 0.1 µA
mV
300 375 410
600 705 750
720 880 1000
- - 20
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2VF is the difference between lowest and highest VF in a multiple diode component.
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BAS70.../BAS170W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Diode capacitance
VR = 0 , f = 1 MHz
Forward resistance
IF = 10 mA, f = 10 kHz
Charge carrier life time
IF = 25 mA
CT - 1.5 2
rf - 34 -
τ rr - - 100
Unit
pF
ps
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BAS70.../BAS170W
Diode capacitance CT = ƒ (VR)
f = 1MHz
Forward resistance rf = ƒ (IF)
f = 10 kHz
2.0 BAS 70W/BAS 170W
C T pF
1.5
EHB00044
10 4
Ohm
10 3
1.0
10 2
0.5
0.0
0
20 40 60 V 80
VR
10
1
10
-2
10 -1
10 0
10 1 mA 10 2
IF
Reverse current IR = ƒ(VR)
TA = Parameter
Forward current IF = ƒ (VF)
TA = Parameter
10 2 BAS 70W/BAS 170W
ΙR µA
10 1
10 0
10 -1
10 -2
EHB00043
TA = 150 C
85 C
25 C
10 2 BAS 70W/BAS 170W
Ι F mA
10 1
EHB00042
10 0
10 -1
TA = -40 C
25 C
85 C
150 C
10 -3
10 -2
0 20 40 60 V 80
0.0 0.5 1.0 V 1.5
VR VF
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