PTAC210802FC.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 PTAC210802FC 데이타시트 다운로드

No Preview Available !

PTAC210802FC
Thermally-Enhanced High Power RF LDMOS FET
80 W, 28 V, 2110 – 2170 MHz
Description
The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical
design intended for use in multi-standard cellular power amplifier
applications in the 2110 to 2170 MHz frequency band. Features
include dual-path design, input matching, high gain and thermally-
enhanced package with earless flange. Manufactured with Infineon's
advanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
PTAC210802FC
Package H-37248-4
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V,
ƒ = 2170 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
19 BW 3.84 MHz, Doherty Fixture
Efficiency
18
55
50
17 45
16
Gain
40
15 35
14 30
13
c210802fc-gc
25
32 34 36 38 40 42 44 46 48
Output Power (dBm)
Features
• Asymmetrical design
- Main : P1dB = 19 W Typ
- Peak : P1dB = 60 W Typ
• Broadband internal matching
• Wide video bandwidth
• Typical CW pulsed performance, 2170 MHz, 28 V
(Doherty fixture)
- Output power @ P3dB = 75 W
- Efficiency = 48%
- Gain @ P3dB = 14 dB
• Capable of handling 10:1 VSWR @28 V, 80 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1B (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ = 85 mA, VGS1 = 1.3 V, POUT = 5 W avg, ƒ1 = 2165 MHz, ƒ2 = 2175 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF, 10 MHz carrier spacing
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
Gps
hD
ACPR
Min
15
39
Typ
17
43
–31
Max
–26
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 05.2, 2016-06-17

No Preview Available !

PTAC210802FC
DC Characteristics (each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Gate Leakage Current
On-State Resistance (main)
On-State Resistance (peak)
Operating Gate Voltage (main)
Operating Gate Voltage (peak)
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, IDQ = 0 V
VGS = 10 V, VDS = 0.1 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 85 mA
VDS = 28 V, IDQ = 360 mA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (main, TCASE = 70°C, 19 W CW)
Thermal Resistance (peak, TCASE = 70°C, 60 W CW)
Ordering Information
Type and Version
PTAC210802FC V1 R0
PTAC210802FC V1 R250
Order Code
PTAC210802FCV1R0XTMA1
PTAC210802FCV1R250XTMA1
Symbol
V(BR)DSS
IDSS
IDSS
IGSS
RDS(on)
RDS(on)
VGS
VGS
Min
65
2.30
2.35
Typ
0.6
0.19
2.65
2.70
Max
1
10
1
3.0
3.05
Unit
V
µA
µA
V
W
W
V
V
Symbol Value
VDSS
VGS
VDD
TJ
TSTG
RqJC
RqJC
65
–6 to +10
0 to +32
225
–65 to +150
2.5
0.8
Unit
V
V
V
°C
°C
°C/W
°C/W
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 05.2, 2016-06-17

No Preview Available !

PTAC210802FC
Typical Performance (data taken in a production Doherty test fixture)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-18
-20
-22
-24
-26
-28
2110 IMDL
2140 IMDL
2110 IMDU
2140 IMDU
2170 IMDL
2170 IMDU
-30
c210802fc-g1
32 34 36 38 40 42 44 46 48
Output Power (dBm)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V,
ƒ = 2170 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
-10
BW 3.84 MHz
IMD Low
IMD Up
-15 ACPR
Efficiency
-20
55
50
45
-25 40
-30 35
-35 30
-40
c210802fc-g2
25
32 34 36 38 40 42 44 46 48
Output Power (dBm)
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V
3GPP WCDMA signal, PAR = 10 dB,
BW 3.84 MHz
12 26
OPAR
10 22
8
Gain
6
18
14
4
2
32
2110 MHz
2140 MHz
2170 MHz
34 36 38 40 42 44
Output Power (dBm)
10
c210802fc-g3
6
46 48
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V,
3GPP WCDMA signal, PAR = 10 dB,
BW 3.84 MHz
-10 2110 MHz
2140 MHz
-15 2170 MHz
Efficiency
55
50
-20 45
-25 40
-30
ACPU
35
-35 30
-40
c210802fc-g4
25
32 34 36 38 40 42 44 46 48
Output Power (dBm)
Data Sheet
3 of 8
Rev. 05.2, 2016-06-17

No Preview Available !

PTAC210802FC
Typical Performance (cont.)
Single-carrier WCDMA
Broadband Performance
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V,
POUT = 9 W, 3GPP WCDMA signal,
PAR = 10 dB, BW 3.84 MHz
60
RL
50
40 Efficiency
0
-10
-20
30 IMD
-30
20 Gain
-40
10
OPAR
-50
0 -60c210802fc-g5
2010 2050 2090 2130 2170 2210 2250
Frequency (MHz)
Power Sweep, CW
VDD = 28 V, IDQ = 100 mA, VGS1 = 1.3 V
20 60
19 55
18 Gain
17
50
45
16 40
15 35
14
Efficiency
13
2110 MHz
2140 MHz
2170 MHz
12
32 34 36 38 40 42 44 46
Output Power (dBm)
30
25
c210802fc-g6
20
48 50
Load Pull Performance
Z Source
D1 Z Load
G1 S
G2
D2
Main Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; VDD = 28 V, 100 mA
P1dB
Max Output Power
Max PAE
Freq
[MHz]
Zs
[W]
Zl
Gain
POUT
POUT
PAE
Zl
Gain
POUT
[W]
[dB] [dBm] [W]
[%]
[W] [dB] [dBm]
2110 28.4 – j28.1 15.1 – j11.9 20.8
43.40
22
50
4.6 – j5.2
23.6
41.3
2140 32.4 – j27.7 7.7 – j10 22.0 43.50
22
61
4.15 – j6
23.9
41.3
2170 45.1 – j33.3 10.8 – j10.6 21.6
43.64
23
58
5.2 – j7.2
23.4
42.1
POUT
[W]
13
13
16
PAE
[%]
68.1
71.9
68.6
Peak Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; VDD = 28 V, VGs1 = 1.41 V, Doherty Class C
Max Output Power
P3dB
Max PAE
Freq
[MHz]
Zs
[W]
Zl
Gain
POUT
POUT
PAE
Zl
Gain
POUT
POUT
PAE
[W]
[dB] [dBm] [W]
[%]
[W]
[dB] [dBm] [W]
[%]
2110 14.8 – j14.6 2.4 – j7.4 14.1 49.60
91
62.0 1.6 – j6.0 15.3
48.3
68
72.5
2140 20.6 – j13.6 2.7 – j7.8
14.0
49.50
89
58.8 1.8 – j6.5 15.2
48.7
74
68.5
2170 24.5 – j9.8 2.6 – j8.1 13.9 49.60
91
57.7 2.0 – j6.6 15.3
48.6
72
67.9
Data Sheet
4 of 8
Rev. 05.2, 2016-06-17

No Preview Available !

PTAC210802FC
Reference Circuit
VGSPK
(62)
C110
R106 C108
C106
C109
R104
RF_IN
R103
S1
C103
R102 C101
R101
C205
C211
C201
C206
C202
C207
R105
VGS
C107
C102
C104 C105
PTAC210802F_IN_01_D RO4350, .030
C210 C208
C203
C209
Reference circuit assembly diagram (not to scale)*
Reference Circuit Assembly
DUT
PTAC210802FC
Test Fixture Part No.
LTA/PTAC210802FC
PCB
Rogers 4350, 0.762 mm [0.030”] thick, 2 oz. copper, εr = 3.66
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
VDD
(63)
RO4350, .030
RF_OUT
PTAC210802F
OUT_01_D
VDD
c210802fc_CD_10-16-2012
Data Sheet
5 of 8
Rev. 05.2, 2016-06-17