FQP50N06.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 FQP50N06 데이타시트 다운로드

No Preview Available !

FQP50N06
®
FQP50N06
Pb
Pb Free Plating Product
50A,60V Heatsink Planar N-Channel Power MOSFET
Features
• 50A, 60V, RDS(on) = 0.022@VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
1. Gate {
{ 2. Drain
◀▲
{ 3. Source
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220M pkg is well suited for
adaptor power unit and small power inverter application.
BVDSS = 60V
RDS(ON) = 0.022 ohm
ID = 50A
TO-220M
23
1
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP50N06
60
50
35.4
200
± 25
490
50
12
7.0
120
0.8
-55 to +175
300
Typ Max
-- 1.24
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/6
http://www.thinkisemi.com/

No Preview Available !

FQP50N06
®
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
60 -- -- V
ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C
IDSS
IGSSF
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
VGS = 25 V, VDS = 0 V
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
IGSSR
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
-- -- -100 nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 25 A
VDS = 25 V, ID = 25 A (Note 4)
2.0 --
4.0
-- 0.018 0.022
-- 22
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1180 1540
-- 440 580
-- 65
90
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 30 V, ID = 25 A,
RG = 25
-- 15
40
-- 105 220
-- 60 130
(Note 4, 5)
--
65
140
VDS = 48 V, ID = 50 A,
VGS = 10 V
(Note 4, 5)
--
--
--
31
8
13
41
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 50 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 50 A
-- -- 200 A
-- -- 1.5 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 50 A,
-- 52
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
75
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 230µH, IAS = 50A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 50A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/6
http://www.thinkisemi.com/

No Preview Available !

FQP50N06
®
Typical Characteristics
VGS
Top : 15.0 V
102
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom: 4.5V
101
100
10-1
Note :
1. 250μ s Pulse Test
2. T = 25
C
100
VDS, Drain-Source Voltage [V]
101
Figure 1. On-Region Characteristics
0.05
0.04
V = 10V
GS
0.03
V = 20V
GS
0.02
0.01
0.00
0
Note : TJ = 25
50 100 150
ID, Drain Current [A]
200
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2500
2000
1500
C
oss
Ciss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
1000
500
C
rss
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
102
101
175
25
100
2
-55
Notes :
1.
2.
V25DS0μ=s30PVulse
Test
468
V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
102
101
100
0.2
175
25
Notes :
1.
2.
V25GS0μ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10 V = 30V
DS
V = 48V
DS
8
6
4
2
Note : I = 50A
D
0
0 5 10 15 20 25 30 35
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 3/6
http://www.thinkisemi.com/