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Shantou Huashan Electronic Devices Co.,Ltd.
HFF5N60
N-Channel Enhancement Mode Field Effect Transistor
General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
Features
4.5A, 600V(See Note), RDS(on) <2.5@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type: FQPF5N60C
Maximum RatingsTa=25unless otherwise specified)
TO-220F
1
1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150
Tj ——Operating Junction Temperature -------------------------------------------------- 150
VDSS —— Drain-Source Voltage ----------------------------------------------------------600V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 4.5A
IDM —— Pulsed Drain Current (Note 1)------------------------------------------------------------------- 18A
PD —— Maximum Power Dissipation (Tc=25℃)-------------------------------------------------------- 33W
Derate Above 25------------------------------------------------------------------------- 0.26W/
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 210mJ
IAR—— Avalanche Current (Note 1) ----------------------------------------------------------------------- 4.5A
EAR —— Repetitive Avalanche Energy (Note 1) ------------------------------------------------------- 10mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------4.5V/ns
Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220F
Max 3.79
Max 62.5
Unit
/W
/W

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Shantou Huashan Electronic Devices Co.,Ltd.
HFF5N60
Electrical CharacteristicsTa=25unless otherwise specified)
Symbol
Items
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Min. Typ.
600
IDSS Zero Gate Voltage Drain Current
IGSS Gate – Body Leakage
On Characteristics
VGS(th) Gate Threshold Voltage
2.5
RDS(on) Static Drain-Source On-Resistance
2.0
Dynamic Characteristics and Switching Characteristics
Ciss Input Capacitance
530
Coss Output Capacitance
57
Crss Reverse Transfer Capacitance
7
td(on)
tr
Turn - On Delay Time
Rise Time
11
45
td(off)
tf
Turn - Off Delay Time
Fall Time
40
48
Qg Total Gate Charge
15
Qgs Gate–Source Charge
4
Qgd Gate–Drain Charge
7
Drain-Source Diode Characteristics and Maximun Ratings
IS
Continuous Source–Drain Diode
Forward Current
ISM
Pulsed Drain-Source Diode
Forward Current
VSD
Source–Drain Diode Forward
On–Voltage
Max. Unit
Conditions
1
10
±100
V
μA
μA
nA
ID=250μA ,VGS=0V
VDS =600V, VGS=0V
VDS =480V, VGS=0V,Tj=125
VGS= ±30V , VDS =0V
4.5 V VDS = VGS , ID=250μA
2.5 VGS=10V, ID=2.25A
690 pF
74
pF
VDS = 25 V, VGS = 0V,
f = 1.0 MHz
9 pF
33 nS
90 nS VDS = 300V, ID=4.5A,
88
nS
RG= 25
(Note 4,5)
100 nS
19 nC
nC
VDS=480V, ID=4.5A,
VGS = 10 V (Note 4,5)
nC
4.5 A
18 A
1.4 V IS=4.5A,VGS=0
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=18.9mH,IAS=4.5A, VDD=50V, RG=25 ,Starting TJ=25
3. ISD4.5A, di/dt200A/μS,VDDBVDSS, Starting TJ=25
4. Pulse Test: Pulse width300μS, Duty Cycle2%
5. Essentially independent of operating temperature

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Shantou Huashan Electronic Devices Co.,Ltd.
Typical Characteristics
HFF5N60

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Shantou Huashan Electronic Devices Co.,Ltd.
Typical Characteristics
HFF5N60

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Shantou Huashan Electronic Devices Co.,Ltd.
Typical Characteristics
HFF5N60