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Silicon N-Channel Power MOSFET
CS3410 B4
R
General Description
CS3410 B4, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency. The
package form is TO-252, which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson0.1)
l Low Gate Charge (Typical Data:20nC)
l Low Reverse transfer capacitances(Typical:100PF)
l 100% Single Pulse avalanche energy Test
Applications
Circuit of switching DC/DC converters and DC motor
control.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD (TC=25)
RDS(ON)Typ
100
17
80
0.075
V
A
W
Rating
100
17
12
68
±20
500
50
3.2
5
80
0.53
17555 to 175
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
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CS3410 B4
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 100V, VGS= 0V,
Ta = 25
VDS =80V, VGS= 0V,
Ta = 125
VGS= 20V
VGS =-20V
Rating
Min. Typ. Max.
100 -- --
-- 0.15 --
-- -- 1
10
-- -- 100
-- -- -100
Units
V
V/
µA
µA
nA
nA
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=8.5A
VDS = VGS, ID = 250µA
Rating
Min. Typ. Max.
-- 0.075 0.1
1.0 2.0
Units
V
Dynamic Characteristics
Symbol
Parameter
gfs Forward Trans conductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =8.5A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =17.0A VDD =50V
VGS =5V RG =6
ID =17.0A VDD =80V
VGS = 5V
Rating
Min. Typ. Max.
11.5 --
-- 850
-- 160
-- 100
Units
S
pF
Rating
Min. Typ. Max.
-- 7.8 --
-- 55 --
-- 35 --
-- 30 --
-- 20
-- 3
-- 15
Units
ns
nC
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CS3410 B4
R
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Pulse width tp300µs,δ≤2%
Test Conditions
IS=17.0A,VGS=0V
IS=17.0A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
Min.
--
--
--
--
--
Rating
Typ. Max.
-- 17
-- 68
-- 1.5
160 --
800 --
Units
A
A
V
ns
nC
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ. Units
1.88 /W
110 /W
a1Repetitive rating; pulse width limited by maximum junction temperature
a2L=10.0mH, ID=10A, Start TJ=25
a3ISD =17.0A,di/dt 100A/us,VDDBVDS, Start TJ=25
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CS3410 B4
R
Characteristics Curve
100
10
DC
OPERATION IN THIS AREA
1 MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED
TC=25Single Pulse
100μs
1 ms
10μs
100
80
60
40
20
0.1
1 10 100
Vds , Drain-to-Source Voltage , Volts
Figure 1 Maximum Forward Bias Safe Operating Area
20
15
0
0 25 50 75 100 125 150 175
TC , Case Temperature , C
Figure 2 Maximum Power Dissipation vs Case Temperature
70
PULSE DURATION=250μs
60
DUTY FACTOR=0.5%MAX
Tc = 25
VGS=15V
VGS=10V
VGS=8V
50
40
10
30
20
5
10
0
0
Figure 3
25 50 75 100 125 150 175
Tc, Junction temperature ,C
Maximum Continuous Drain Current vs Case Temperature
10
0
0
VGS=7V
VGS=6V
VGS=5V
VGS=5.5V
VGS=4V
5 10 15 20 25
Vds , Drain-to-Source Voltage , Volts
Figure 4 Typical Output Characteristics
30
1
20%
5%
0.1
50%
10%
Single pulse
0.01
0.00001
2%
1%
PDM
t1
t2
NOTES
DUTY FACTOR D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
1
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1000
100
CS3410 B4
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
R
FOR TEMPERATURES
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
10
1.00E-05
1.00E-04
100
PULSE DURATION = 250μs
VDS=45V
1.00E-03
Figure 6
1.00E-02
1.00E-01
t Pulse Width , Seconds
Maximum Peak Current Capability
0.3
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
10 0.2
1 +1500.1
+25
ID= 17A
ID= 8.5A
ID= 4.25A
ID= 2.125A
-55
0.1
2
Figure
468
Vgs , Gate to Source Voltage , Volts
7 Typical Transfer Characteristics
0.3
Tc =25
0.24
0
10 4 6 8 10 12 14
Vgs , Gate to Source Voltage , Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
VGS=10V ID=8.5A
2
0.18 1.5
VGS=10V
0.12 1
0.06
VGS=20V
0.5
0
0 10
Figure 9
20 30 40 50 60
Id , Drain Current , Amps
Typical Drain to Source ON Resistance
vs Drain Current
70
0
-100
-50
Figure 10
0 50 100 150 200
Tj, Junction temperature , C
Typical Drian to Source on Resistance
vs Junction Temperature
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