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Silicon N-Channel Power MOSFET
CS8N65 A0H
R
General Description
CS8N65 A0H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-263,
which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson1.3)
l Low Gate Charge (Typical Data:28nC)
l Low Reverse transfer capacitances(Typical:14pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
Drain-to-Source Voltage
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
PD
Derating Factor above 25°C
TJTstg
TL
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
650
8
110
0.9
Rating
650
8
5.5
32
±30
500
40
2.8
5.0
110
0.88
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01

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CS8N65 A0H
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=4.0A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Trans conductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =4A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =8.0A VDD = 325V
VGS = 10V RG = 9.1
ID =8.0A VDD =325V
VGS = 10V
Rating
Min. Typ. Max.
650 -- --
-- 0.5 --
-- -- 1
-- -- 100
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
Rating
Min. Typ. Max.
-- 0.9 1.3
2.0 4.0
Units
V
Rating
Min. Typ. Max.
-- 7 --
-- 1240 --
-- 108 --
-- 14 --
Units
S
pF
Rating
Min. Typ. Max.
-- 13 --
-- 15 --
-- 40 --
-- 21 --
-- 28
-- 6 --
-- 11 --
Units
ns
nC
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS8N65 A0H
R
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Pulse width tp300µs,δ≤2%
Test Conditions
IS=8.0A,VGS=0V
IS=8.0A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
Rating
Min. Typ. Max.
-- --
8
-- --
32
-- --
1.5
-- 556 --
-- 3.4 --
Units
A
A
V
ns
uC
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
1.14
62
Units
/W
/W
a1Repetitive rating; pulse width limited by maximum junction temperature
a2L=10.0mH, ID=10A, Start TJ=25
a3ISD =8A,di/dt 100A/us,VDDBVDS, Start TJ=25
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS8N65 A0H
R
Characteristics Curve
100 140
10
100μs
1 1ms
10ms
0.1 OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED
TC=25Single Pulse
DC
0.01
1 10 100 1000 10000
Vds , Drain-to-Source Voltage , Volts
Figure 1 Maximum Forward Bias Safe Operating Area
10
8
6
4
120
100
80
60
40
20
0
0
Figure
25 50 75 100 125 150
Tc , Case Temperature , C
2 Maximum Power Dissipation vs Case Temperature
14
VGS=10V
12
10 VGS=9V
8
6
VGS=8V
VGS=7V
4
2
2 VGS=6V
0
0 25 50 75 100 125 150
Tc , Case Temperature ,C
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
0
0
5 10 15 20 25 30
Vds , Drain-to-Source Voltage , Volts
Figure 4 Typical Output Characteristics
35
50%
20%
10%
0.1
5%
Single pulse
0.01
0.00001
2%
1%
PDM
t1
t2
NOTES
DUTY FACTOR D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS8N65 A0H
R
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
10
VGS=10V
1
1.00E-05
1.00E-04
14
12 PULSED TEST
VDS=30V
10
8
6
1.00E-03
Figure 6
1.00E-02
1.00E-01
t Pulse Width , Seconds
Maximun Peak Current Capability
4
3
2
1.00E+00
1.00E+01
ID= 8A
ID= 4A
ID= 2A
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
4
2
0
0 2 4 6 8 10
Vgs , Gate to Source Voltage Volts
Figure 7 Typical Transfer Characteristics
1.2
PULSED TEST
Tc =25
1.1
1
0
12 4 6 8 10 12 14
Vgs , Gate to Source VoltageVolts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
PULSED TEST
2.5 VGS=10V ID=2.5A
2
1 VGS=10V
1.5
0.9
1
0.8 0.5
0.7 0
0123456
Id , Drain Current , Amps
-100 -50 0 50 100 150 200
Tj, Junction temperature ,C
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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