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Silicon N-Channel Power MOSFET
CS3N60 A3
R
General Description
VDSS
600 V
CS3N60 A3 the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25) 55 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
2.7
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard..
Features
l Fast Switching
l Low ON Resistance(Rdson3.2)
l Low Gate Charge (Typical Data:11nC)
l Low Reverse transfer capacitances(Typical:5pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
Rating
600
3
2.2
12
±30
100
10
1.4
5
55
0.44
15055 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
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CS3N60 A3
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 600V, VGS= 0V,
Ta = 25
VDS =480V, VGS= 0V,
Ta = 125
VGS= 30V
VGS =-30V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp380µs,δ≤2%
Test Conditions
VGS=10V,ID=1.5A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =1.5A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =3.0A VDD = 300V
VGS = 10V RG = 9.1
ID =3.0A VDD =300V
VGS = 10V
Rating
Units
Min. Typ. Max.
600 -- -- V
-- 0.6 -- V/
-- -- 1
µA
100
-- -- 100 nA
-- -- -100 nA
Rating
Min. Typ. Max.
-- 2.7 3.2
2.0 4.0
Units
V
Rating
Min. Typ. Max.
3 --
-- 341
-- 38
-- 5
Units
S
pF
Rating
Min. Typ. Max.
-- 8 --
-- 7 --
-- 28 --
-- 9 --
-- 11
-- 2
-- 5
Units
ns
nC
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CS3N60 A3
R
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Pulse width tp380µs,δ≤2%
Test Conditions
IS=3.0A,VGS=0V
IS=3.0A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
Min.
--
--
--
--
--
Rating
Typ. Max.
-- 3
-- 12
-- 1.5
115 --
360 --
Units
A
A
V
ns
nC
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ. Units
2.27 /W
62 /W
a1Repetitive rating; pulse width limited by maximum junction temperature
a2L=10.0mH, ID=4.5A, Start TJ=25
a3ISD =3A,di/dt 100A/us,VDDBVDS, Start TJ=25
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CS3N60 A3
Characteristics Curve
100
60
R
10
1
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
0 .1 TJ=MAX RATED
TC=25Single Pulse
100μs
1 ms
10ms
DC
0.01
1 10 100 1000
V ds , D rain-to-S ource V oltage , V olts
Figure 1 Maximun Forward Bias Safe Operating Area
4.0
3.2
2.4
1.6
0.8
45
30
15
0
0 25 50 75 100 125 150
TC , Case Temperature , C
Figure 2 Maximun Power Dissipation vs Case Temperature
4
PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
Tc = 25
VGS=15V
3
VGS=7V
2
VGS=6V
VGS=6.5V
1
VGS=4.5V
VGS=5.5V
0
0
Figure 3
1
25 50 75 100 125 150
TC , Case Temperature , C
Maximum Continuous Drain Current vs Case Temperature
50%
0
0 5 10 15 20
Vds , Drain-to-Source Voltage , Volts
Figure 4 Typical Output Characteristics
20%
0.1 10%
5%
0.01
Single pulse
0.001
0.00001
2%
1%
PDM
t1
t2
NOTES
DUTY FACTOR D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
0.1
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25
1

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CS3N60 A3
R
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
10
1
1.00E-05
1.00E-04
6
PULSE DURATION = 10μs
5
DUTY CYCLE = 0.5%MAX
VDS=30V
4
3
2 +150
+25
1
-55
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
5
4
3
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
ID=3A
ID=1.5A
ID=1A
ID=0.5A
0
2345
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
8.5
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
7
2
6 4 6 8 10 12 14
Vgs , Gate to Source Voltage , Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=1A
1.75
5.5 1.5
VGS=20V
1.25
41
0.75
2.5
0123
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
4
0.5
-50
Figure
0 50 100 150
Tj, Junction temperature , C
10 Typical Drian to Source on Resistance
vs Junction Temperature
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