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  AUTOMOTIVE GRADE
Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
VDSS
RDS(on)
ID
D
AUIRLR024Z
AUIRLU024Z
HEXFET® Power MOSFET
typ.
max.
55V
46m
58m
16A
D
G
Gate
S
G
D-Pak
AUIRLR024Z
D
Drain
S
GD
I-Pak
AUIRLU024Z
S
Source
Base part number
AUIRLU024Z
AUIRLR024Z 
Package Type
I-Pak
D-Pak  
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRLU024Z
AUIRLR024Z
AUIRLR024ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Max.
16
11
64
35
0.23
Units
A
W
W/°C
VGS
EAS
EAS (Tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
± 16 V
25
25 mJ
See Fig.15,16, 12a, 12b
A
mJ
-55 to + 175
 
°C 
300  
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient ( PCB Mount)
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
–––
Max.
4.28
50
110
Units
°C/W
2015-12-11

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  AUIRLR/U024Z
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.053 ––– V/°C Reference to 25°C, ID = 1mA
––– 46 58
VGS = 10V, ID = 9.6A 
––– ––– 80 mVGS = 5.0V, ID = 5.0A 
––– ––– 100
VGS = 4.5V, ID = 3.0A 
1.0 ––– 3.0 V VDS = VGS, ID = 250µA
7.4 ––– ––– S VDS = 25V, ID = 9.6A
–––
–––
–––
–––
20
250
µA
VDS = 55V, VGS = 0V
VDS = 55V,VGS = 0V,TJ =125°C
–––
–––
––– 200
––– -200
nA
VGS = 16V
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics  
––– 6.6 9.9
ID = 5.0A
––– 1.6 ––– nC   VDS = 44V
––– 3.9 –––
VGS = 5.0V
––– 8.2 –––
VDD = 28V
–––
–––
43
19
–––
–––
ns
ID = 5.0A
RG = 28
––– 16 –––
VGS = 5.0V
–––
–––
4.5
7.5
–––
–––
Between lead,
nH
 
6mm (0.25in.)
from package
and center of die contact
––– 380 –––
VGS = 0V
––– 62 –––
VDS = 25V
–––
–––
39
180
–––
–––
pF
 
ƒ = 1.0MHz
VGS = 0V, VDS
=
1.0V
ƒ
=
1.0MHz
––– 50 –––
VGS = 0V, VDS = 44V ƒ = 1.0MHz
––– 81 –––
VGS = 0V, VDS = 0V to 44V
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
16
64
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 1.3
––– 16 24
––– 11 17
V TJ = 25°C,IS = 9.6A, VGS = 0V 
ns TJ = 25°C ,IF = 9.6A, VDD = 28V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax , starting TJ = 25°C, L = 0.54mH, RG = 25, IAS = 9.6A, VGS =10V. Part not recommended for use above this value.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting TJ = 25°C, L = 0.54mH, RG = 25, IAS = 9.6A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
Ris measured at TJ approximately 90°C.
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100
10
TOP
BOTTOM
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
1
0.1
0.1
3.0V
60µs PULSE WIDTH
Tj = 25°C
1
VDS, Drain-to-Source Voltage (V)
10
Fig. 1 Typical Output Characteristics
AUIRLR/U024Z
100
10
TOP
BOTTOM
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
1
3.0V
0.1
0.1
60µs PULSE WIDTH
Tj = 175°C
1
VDS, Drain-to-Source Voltage (V)
10
Fig. 2 Typical Output Characteristics
100
TJ = 175°C
10
1
0.1
0
TJ = 25°C
VDS = 10V
60µs PULSE WIDTH
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
12
Fig. 3 Typical Transfer Characteristics
3
15
TJ = 25°C
10
TJ = 175°C
5
VDS = 8.0V
300µs PULSE WIDTH
0
0 2 4 6 8 10 12 14 16
ID,Drain-to-Source Current (A)
Fig. 4 Typical Forward Trans conductance
Vs. Drain Current
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10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
AUIRLR/U024Z
6.0
ID= 5.0A
5.0
VDS= 44V
VDS= 28V
4.0 VDS= 11V
3.0
2.0
1.0
0.0
0
123456
QG Total Gate Charge (nC)
7
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
TJ = 175°C
10
1
0.0
TJ = 25°C
VGS = 0V
0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
3.0
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
 4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
1msec
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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16
14
12
10
8
6
4
2
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
AUIRLR/U024Z
2.5
ID = 5.0A
VGS = 5.0V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
10
D = 0.50
1 0.20
0.10
0.05
0.1 0.02
0.01
0.01 SINGLE PULSE
( THERMAL RESPONSE )
J J
1 1
R1R 1
Ci= iRi
Ci= iRi
R2R 2
2 2
CC
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Ri (°C/W)
2.354
1.926
i (sec)
0.000354
0.001779
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 2015-12-11