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AUTOMOTIVE GRADE
AUIRLR2905
AUIRLU2905
Features
Advanced Planar Technology
Logic Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
VDSS
RDS(on)
ID
D
HEXFET® Power MOSFET
55V
max.
27m
42A
D
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
S
G
D-Pak
AUIRLR2905
G
Gate
D
Drain
S
GD
I-Pak
AUIRLU2905
S
Source
Base part number
AUIRLU2905
AUIRLR2905 
Package Type
I-Pak
D-Pak  
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRLU2905
AUIRLR2905
AUIRLR2905TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Max.
42
30
160
110
0.71
Units
A
W
W/°C
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (tested Value)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
± 16
210
200
25
11
5.0
-55 to + 175
300
V
mJ
A
mJ
V/ns
 
°C 
 
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient ( PCB Mount)
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
2015-12-11

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  AUIRLR/U2905
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.070 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.027
VGS = 10V, ID = 25A 
––– ––– 0.030  VGS = 5.0V, ID = 25A 
––– ––– 0.040
VGS = 4.0V, ID = 21A 
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
21 ––– ––– S VDS = 25V, ID = 25A
–––
–––
–––
–––
25
250
µA
VDS = 55V, VGS = 0V
VDS = 44V,VGS = 0V,TJ =150°C
–––
–––
––– 100
––– -100
nA
VGS = 16V
VGS = - 16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics  
––– ––– 48
––– ––– 8.6
––– ––– 25
––– 11 –––
––– 84 –––
––– 26 –––
––– 15 –––
––– 4.5 –––
––– 7.5 –––
––– 1700 –––
––– 400 –––
––– 150 –––
ID = 25A
nC   VDS = 44V
VGS = 5.0V
VDD = 28V
ns
ID = 25A
RG = 3.4VGS = 5.0V
RD = 1.1
Between lead,
nH
 
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
pF   VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 42
––– ––– 160
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
––– ––– 1.3 V TJ = 25°C,IS = 25A, VGS = 0V 
––– 80 120 ns TJ = 25°C ,IF = 25A
––– 210 320 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
VDD = 25V,Starting TJ = 25°C, L = 470µH, RG = 25, IAS = 25A (See fig. 12)
ISD 25A, di/dt 270A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application
note #AN-994.
Ris measured at Tj approximately 90°C.
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1000
100
VGS
TOP
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
1
0.1
2.5V
20µs PULSE WIDTH
TJ = 25°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
AUIRLR/U2905
1000
100
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10 2.5V
20µs PULSE WIDTH
1
TJ = 175°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
1000
TJ = 25°C
100
TJ = 175°C
10
V DS= 25V
1
20µs PULSE WIDTH
A
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
3.0 ID = 41A
2.5
2.0
1.5
1.0
0.5
0.0 VGS = 10V A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
Vs. Temperature
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2800
2400
2000
Ciss
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1600
1200
Coss
800
Crss
400
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
AUIRLR/U2905
15 I D = 25A
12
VDS = 44V
VDS = 28V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 10 20 30 40 50 60 70
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
100
TJ = 175°C
TJ = 25°C
10
0.4
VGS = 0V A
0.8 1.2 1.6 2.0 2.4
VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
 4
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100 10µs
100µs
10
1ms
TC = 25°C
TJ = 175°C
1 Single Pulse
10ms
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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  AUIRLR/U2905
50
LIMITED BY PACKAGE
40
30
20
10
0
25 50 75 100 125 150 175
TC, Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.0001
Notes:
1. Dutyfactor D = t1/ t 2
2. Peak T J = P DM x Z thJC + TC
0.001
t1, Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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