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AUTOMOTIVE GRADE
PD - 97717A
AUIRLS3034-7P
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) typ.
1.0m
max. 1.4m
cG
ID (Silicon Limited)
380A
S ID (Package Limited) 240A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
S
SS
S
S
G
D2Pak 7 Pin
AUIRLS3034-7P
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Max.
™380
™270
240
1540
380
2.5
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally Limited)
ÃdAvalanche Current
dRepetitive Avalanche Energy
fPeak Diode Recovery
± 20
250
See Fig. 14, 15, 22a, 22b
1.3
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300
°C
(1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Parameter
klJunction-to-Case
jJunction-to-Ambient
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
11/29/11

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AUIRLS3034-7P
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
40 ––– –––
––– 0.035 –––
––– 1.0 1.4
1.2 1.7
1.0 ––– 2.5
V VGS = 0V, ID = 250μA
dV/°C Reference to 25°C, ID = 5mA
gmVGS = 10V, ID = 200A
gVGS = 4.5V, ID = 180A
V VDS = VGS, ID = 250μA
gfs Forward Transconductance
RG Internal Gate Resistance
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
370 ––– –––
––– 1.9 –––
––– ––– 20
––– ––– 250
––– ––– 100
S VDS = 10V, ID = 220A
μA VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
Qsync
td(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
––– 120 180
––– 32 –––
––– 71 –––
––– 49 –––
––– 71 –––
nC ID = 170A
gVDS =20V
VGS = 4.5V
ID = 170A, VDS =0V, VGS = 4.5V
ns VDD = 26V
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
––– 590 –––
––– 94 –––
––– 200 –––
––– 10990 –––
––– 2030 –––
ID = 220A
gRG = 2.7
VGS = 4.5V
pF VGS = 0V
VDS = 40V
Crss Reverse Transfer Capacitance
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) –––
Coss eff. (TR) Effective Output Capacitance (Time Related) –––
1100
2520
3060
–––
–––
–––
ƒ = 1.0MHz, See Fig. 5
iVGS = 0V, VDS = 0V to 32V , See Fig. 11
hVGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 380 A MOSFET symbol
D
showing the
––– ––– 1540 A integral reverse
G
––– ––– 1.3
p-n junction diode.
S
gV TJ = 25°C, IS = 200A, VGS = 0V
––– 46 ––– ns TJ = 25°C
VR = 34V,
––– 49 –––
––– 100 –––
TJ = 125°C
nC TJ = 25°C
gIF = 220A
di/dt = 100A/μs
––– 110 –––
TJ = 125°C
––– 3.7 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 220A, di/dt 1240A/μs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 240A. Note that current
… Pulse width 400μs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. (Refer to AN-1140)
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.010mH
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25, IAS = 220A, VGS =10V. Part not recommended for use
above this value .
2
mended footprint and soldering techniques refer to application note #AN-994.
‰ Ris measured at TJ approximately 90°C.
Š RJC value shown is at time zero.
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AUIRLS3034-7P
Qualification Information
Qualification Level
Automotive
(per AEC-Q101) ††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
D2Pak 7 Pin
MSL1
Class M4 (+/- 800V)†††
AEC-Q101-002
Class H3A (+/- 6000V)†††
AEC-Q101-001
Class C5 (+/- 2000V)†††
AEC-Q101-005
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage.
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AUIRLS3034-7P
100000
10000
1000
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
60μs PULSE WIDTH
Tj = 25°C
100
10
1
0.1
2.5V
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
60μs PULSE WIDTH
0.1
12345
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Ciss
Coss
Crss
1000
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
10000
1000
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
60μs PULSE WIDTH
Tj = 175°C
100
2.5V
10
0.1
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.0
ID = 200A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
5.0
ID= 170A
4.0
VDS= 32V
VDS= 20V
3.0
2.0
1.0
0.0
0
25 50 75 100 125 150
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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1000
TJ = 175°C
100
TJ = 25°C
10
VGS = 0V
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
400
3.5
Limited By Package
300
200
100
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-5 0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
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AUIRLS3034-7P
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
100
Limited by package
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
01
10msec
DC
10
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
50
Id = 5mA
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1200
1000
800
ID
TOP 47A
94A
BOTTOM 220A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
5