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BSC010N04LSI
MOSFET
OptiMOSTMPower-MOSFET,40V
Features
•Optimizedforsynchronousrectification
•IntegratedmonolithicSchottky-likediode
•Verylowon-resistanceRDS(on)
•100%avalanchetested
•N-channel,logiclevel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 40
V
RDS(on),max
1.05
m
ID 100 A
QOSS
83
nC
QG(0V..10V)
87
nC
TDSON-8FL(enlargedsourceinterconnection)
8
7
65
1
2
34
4
3
2
1
5
67
8
S1 8D
S2 7D
S3 6D
G4 5D
Type/OrderingCode
BSC010N04LSI
Package
TDSON-8 FL
Marking
010N04LI
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.2,2016-05-04

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OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2 Rev.2.2,2016-05-04

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OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
ID
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ID,pulse
IAS
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-
-
-
-20
-
-
-55
Values
Typ. Max.
- 100
- 100
- 100
- 100
- 37
- 400
- 50
- 230
- 20
- 139
- 2.5
- 150
Unit Note/TestCondition
VGS=10V,TC=25°C
VGS=10V,TC=100°C
A VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W1)
A TC=25°C
A TC=25°C
mJ ID=50A,RGS=25
V-
W
TC=25°C
TA=25°C,RthJA=50K/W1)
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm2 cooling area1)
RthJC
RthJC
RthJA
Values
Unit Note/TestCondition
Min. Typ. Max.
- 0.5 0.9 K/W -
- - 20 K/W -
- - 50 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
Final Data Sheet
3 Rev.2.2,2016-05-04

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OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Breakdown voltage temperature
coefficient
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance1)
Transconductance
Symbol
V(BR)DSS
Min.
40
dV(BR)DSS/dTj -
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
1.2
-
-
-
-
-
-
130
Values
Typ. Max.
--
30 -
-2
- 0.5
3-
10 100
1.1 1.4
0.9 1.05
0.8 1.6
260 -
Unit Note/TestCondition
V VGS=0V,ID=10mA
mV/K ID=10mA,referencedto25°C
V VDS=VGS,ID=250µA
mA
VDS=32V,VGS=0V,Tj=25°C
VDS=32V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
m
VGS=4.5V,ID=50A
VGS=10V,ID=50A
-
S |VDS|>2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Typ. Max.
6200 8680
1900 2660
140 280
22 -
48 -
72 -
17 -
Unit Note/TestCondition
pF VGS=0V,VDS=20V,f=1MHz
pF VGS=0V,VDS=20V,f=1MHz
pF VGS=0V,VDS=20V,f=1MHz
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext=1.6
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext=1.6
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext=1.6
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext=1.6
1) Defined by design. Not subject to production test
Final Data Sheet
4
Rev.2.2,2016-05-04

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OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge2)
Switching charge
Gate charge total2)
Gate plateau voltage
Gate charge total2)
Gate charge total, sync. FET
Output charge2)
Qgs
Qg(th)
Qgd
Qsw
Qg
Vplateau
Qg
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
-
-
Values
Typ. Max.
15 -
9.9 -
14 20
19 -
87 122
2.4 -
45 63
76 -
83 116
Unit Note/TestCondition
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
V VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to4.5V
nC VDS=0.1V,VGS=0to10V
nC VDD=20V,VGS=0V
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
Symbol
IS
IS,pulse
VSD
Qrr
Min.
-
-
-
-
Values
Typ. Max.
- 100
- 400
0.57 0.7
20 -
Unit Note/TestCondition
A TC=25°C
A TC=25°C
V VGS=0V,IF=20A,Tj=25°C
nC VR=20V,IF=20A,diF/dt=400A/µs
1) See Gate charge waveformsfor parameter definition
2) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.2,2016-05-04