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BSZ040N06LS5
MOSFET
OptiMOSTMPower-Transistor,60V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
4.0
m
ID 40 A
QOSS
32
nC
QG(0V..4.5V)
18
nC
TSDSON-8FL
(enlarged source interconnection)
S1 8D
S2 7D
S3 6D
G4 5D
Type/OrderingCode
BSZ040N06LS5
Package
PG-TSDSON-8 FL
Marking
040N06L
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2016-08-10

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OptiMOSTMPower-Transistor,60V
BSZ040N06LS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2 Rev.2.1,2016-08-10

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OptiMOSTMPower-Transistor,60V
BSZ040N06LS5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse3)
Gate source voltage
Power dissipation
Operating and storage temperature
ID
ID,pulse
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-20
-
-
-55
Values
Typ. Max.
- 40
- 40
- 17
- 160
- 117
- 20
- 69
- 2.1
- 150
Unit Note/TestCondition
VGS=10V,TC=25°C
A VGS=10V,TC=100°C
VGS=10V,TA=25°C,RthJA=60K/W1)
A TC=25°C
mJ ID=20A,RGS=25
V-
W
TC=25°C
TA=25°C,RthJA=60K/W1)
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB,
minimal footprint
Device on PCB,
6 cm2 cooling area1)
RthJC
RthJA
RthJA
Min.
-
Values
Typ. Max.
1.1 1.8
Unit Note/TestCondition
K/W -
- - 62 K/W -
- - 60 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
Final Data Sheet
3 Rev.2.1,2016-08-10

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OptiMOSTMPower-Transistor,60V
BSZ040N06LS5
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance1)
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
60
1.1
-
-
-
-
-
-
32
Values
Typ. Max.
--
1.7 2.3
0.1 1
10 100
10 100
3.3 4.0
4.4 5.6
1.6 2.4
65 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=36µA
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
m
VGS=10V,ID=20A
VGS=4.5V,ID=10A
-
S |VDS|>2|ID|RDS(on)max,ID=20A
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Typ. Max.
2400 3100
500 650
25 44
8.5 -
4.6 -
25.6 -
4.8 -
Unit Note/TestCondition
pF VGS=0V,VDS=30V,f=1MHz
pF VGS=0V,VDS=30V,f=1MHz
pF VGS=0V,VDS=30V,f=1MHz
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext=1.6
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext=1.6
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext=1.6
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext=1.6
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Qgs
Qg(th)
Qgd
Qsw
Qg
Vplateau
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
-
Values
Typ. Max.
6.6 -
3.9 -
5.3 8.0
8.0 -
18 22
2.7 -
32 42
32 42
Unit Note/TestCondition
nC VDD=30V,ID=20A,VGS=0to4.5V
nC VDD=30V,ID=20A,VGS=0to4.5V
nC VDD=30V,ID=20A,VGS=0to4.5V
nC VDD=30V,ID=20A,VGS=0to4.5V
nC VDD=30V,ID=20A,VGS=0to4.5V
V VDD=30V,ID=20A,VGS=0to4.5V
nC VDS=0.1V,VGS=0to10V
nC VDD=30V,VGS=0V
1) Defined by design. Not subject to production test
2) See Gate charge waveformsfor parameter definition
Final Data Sheet
4
Rev.2.1,2016-08-10

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OptiMOSTMPower-Transistor,60V
BSZ040N06LS5
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge1)
Symbol
IS
IS,pulse
VSD
trr
Qrr
Min.
-
-
-
-
-
Values
Typ. Max.
- 40
- 160
0.80 1.2
24 48
11 22
Unit Note/TestCondition
A TC=25°C
A TC=25°C
V VGS=0V,IF=20A,Tj=25°C
ns VR=30V,IF=20A,diF/dt=100A/µs
nC VR=30V,IF=20A,diF/dt=100A/µs
1) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.1,2016-08-10