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Advanced Power
Electronics Corp.
AP6900GSM
Pb Free Plating Product
DUAL N-CHANNEL MOSFET WITH
SCHOTTKY DIODE
Simple Drive Requirement
DC-DC Converter Suitable
Fast Switching Performance
Description
S1/D2
S1/D2
S1/D2
G1
SO-8
S2/A
G2
D1
D1
CH-1
CH-2
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
D1
G1
N-Channel 1
MOSFET
30V
30mΩ
5.7A
30V
22mΩ
9.8A
S1/D2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
G2
N-Channel 2
MOSFET
S2/A
Schottky Diode
Rating
Channel-1 Channel-2
30 30
±20 ±20
5.7 9.8
4.6 7.8
20 30
1.4 2.2
0.01 0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-a (CH-1)
Rthj-a (CH-2)
Thermal Resistance Junction-ambient3
Thermal Resistance Junction-ambient3
Value
Typ. Max.
70 90
42 55
Units
/W
/W
Data and specifications subject to change without notice
201121063-1/9

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AP6900GSM
CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=3A
VDS=VGS, ID=250uA
VDS=10V, ID=5A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=6A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=10V
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
30 -
-V
- 0.01 - V/
- - 30 mΩ
- - 37 mΩ
1 - 3V
- 5.7 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 9 15 nC
- 2 - nC
- 6 - nC
- 8 - ns
- 7 - ns
- 19 - ns
- 6 - ns
- 610 970 pF
- 160 - pF
- 120 - pF
- 1.6 -
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=6A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 18 - ns
- 11 - nC
2/9

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AP6900GSM
CH-2 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25,ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=9A
VGS=4.5V, ID=7A
30 - - V
- 0.1 - V/
- - 22 mΩ
- - 29 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1 - 3V
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current ( Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=10V, ID=9A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=7A
VDS=24V
VGS=10V
VDS=20V
ID=1A
RG=5.7Ω,VGS=10V
RD=20Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
- 11 -
S
- - 100 uA
- - 1 mA
- - ±100 nA
- 25 40 nC
- 4 - nC
- 7 - nC
- 10 - ns
- 6 - ns
- 26 - ns
- 12 - ns
- 1170 1860 pF
- 205 - pF
- 142 - pF
- 1.7 -
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=2.6A, VGS=0V
Is=7A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 21 - ns
- 16 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10 sec.
3/9

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AP6900GSM
Schottky Specifications@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
VF Forward Voltage Drop
IF=1.0A
-
Irm Maximum Reverse Leakage Current Vr=30V
Maximum Reverse Leakage Current Vr=30V,Tj=100
-
-
CT Junction Capacitance
Vr=10V
-
Typ.
0.47
0.004
0.5
66
Max.
0.5
0.2
1
-
Units
V
mA
mA
pF
4/9

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AP6900GSM
Channel-1
40
T A = 25 o C
30
20
10V
7.0V
5.0V
4.5V
10
V G =3.0V
0
012345
V DS , Drain-to-Source Voltage (V)
6
Fig 1. Typical Output Characteristics
38
34 I D = 3 A
T A =25 o C
30
26
22
18
2468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
7
6
5
4
T j =150 o C
T j =25 o C
3
2
1
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
40
TA=150oC
10V
7.0V
5.0V
30
4.5V
20
10
V G =3.0V
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
ID=5A
1.4 V G =10V
1.2
1.0
0.8
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
1.6
1.3
1.0
0.7
0.4
-50 0 50 100
T j ,Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
5/9