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Advanced Power
Electronics Corp.
AP6900GSM-HF
Halogen-Free Product
DUAL N-CHANNEL MOSFET WITH
SCHOTTKY DIODE
Simple Drive Requirement
DC-DC Converter Suitable
Fast Switching Performance
RoHS Compliant
Description
S1/D2
S1/D2
S1/D2
G1
SO-8
S2/A
G2
D1
D1
CH-1
CH-2
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
D1
30V
30mΩ
5.7A
30V
22mΩ
9.8A
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
N-Channel 1
MOSFET
S1/D2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
G2
N-Channel 2
MOSFET
S2/A
Schottky Diode
Rating
Channel-1 Channel-2
30 30
±20 ±20
5.7 9.8
4.6 7.8
20 30
1.4 2.2
0.01 0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-a (CH-1)
Rthj-a (CH-2)
Thermal Resistance Junction-ambient3
Thermal Resistance Junction-ambient3
Value
Typ. Max.
70 90
42 55
Units
/W
/W
Data and specifications subject to change without notice
1
200805153

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AP6900GSM-HF
CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=3A
VDS=VGS, ID=250uA
VDS=10V, ID=5A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=6A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=10V
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
30 -
-V
- 0.01 - V/
- - 30 mΩ
- - 37 mΩ
1 - 3V
- 5.7 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 9 15 nC
- 2 - nC
- 6 - nC
- 8 - ns
- 7 - ns
- 19 - ns
- 6 - ns
- 610 970 pF
- 160 - pF
- 120 - pF
- 1.6 -
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=6A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 18 - ns
- 11 - nC
2

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AP6900GSM-HF
CH-2 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30 -
ΔBVDSS/ΔTj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25,ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=9A
- 0.1
--
VGS=4.5V, ID=7A
--
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1-
gfs
Forward Transconductance
VDS=10V, ID=9A
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC)
VDS=24V, VGS=0V
IGSS Gate-Source Leakage
Qg Total Gate Charge2
VGS=±20V
ID=7A
- 11
--
--
--
- 25
Qgs Gate-Source Charge
VDS=24V
-4
Qgd
td(on)
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=10V
VDS=20V
-7
- 10
tr Rise Time
ID=1A
-6
td(off)
Turn-off Delay Time
RG=5.7Ω,VGS=10V
- 26
tf Fall Time
RD=20Ω
- 12
Ciss Input Capacitance
VGS=0V
- 1170
Coss Output Capacitance
VDS=25V
- 205
Crss
Reverse Transfer Capacitance
f=1.0MHz
Rg Gate Resistance
f=1.0MHz
- 142
- 1.7
Max.
-
-
22
29
3
-
100
1
±100
40
-
-
-
-
-
-
1860
-
-
-
Units
V
V/
mΩ
mΩ
V
S
uA
mA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=2.6A, VGS=0V
Is=7A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 21 - ns
- 16 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10 sec.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3

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AP6900GSM-HF
Schottky Specifications@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
VF Forward Voltage Drop
IF=1.0A
-
Irm Maximum Reverse Leakage Current Vr=30V
Maximum Reverse Leakage Current Vr=30V,Tj=100
-
-
CT Junction Capacitance
Vr=10V
-
Typ.
0.47
0.004
0.5
66
Max.
0.5
0.2
1
-
Units
V
mA
mA
pF
4

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AP6900GSM-HF
Channel-1
40
T A = 25 o C
30
20
10V
7.0V
5.0V
4.5V
10 V G =3.0V
0
012345
V DS , Drain-to-Source Voltage (V)
6
Fig 1. Typical Output Characteristics
38
ID=3A
T A =25 o C
34
30
26
22
18
2468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
7
6
5
4
T j =150 o C
T j =25 o C
3
2
1
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
40
TA=150oC
10V
7.0V
30
5.0V
4.5V
20
10
V G =3.0V
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
ID=5A
V G =10V
1.4
1.2
1.0
0.8
0.6
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
1.6
1.3
1.0
0.7
0.4
-50 0 50 100
T j ,Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
5