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Advanced Power
Electronics Corp.
AP9575AGH/J
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Higher Gate-Source Voltage
Simple Drive Requirement
Fast Switching Characteristic
Description
G
D
S
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9575AGJ)
are available for low-profile applications.
BVDSS
RDS(ON)
ID
-60V
64mΩ
-17A
GD
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
TO-251(J)
Rating
-60
+30
-17
-11
-60
36
0.29
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
3.5
62.5
110
Units
/W
/W
/W
Data and specifications subject to change without notice
1
200908033

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AP9575AGH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS=0V, ID=-250uA
VGS=-10V, ID=-12A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-10V, ID=-9A
Drain-Source Leakage Current
VDS=-60V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=-48V, VGS=0V
Gate-Source Leakage
VGS=+30V, VDS=0V
Total Gate Charge2
ID=-12A
Gate-Source Charge
VDS=-48V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-10V
VDS=-30V
Rise Time
ID=-12A
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
Fall Time
RD=2.5Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=-25V
Reverse Transfer Capacitance
f=1.0MHz
-60 - - V
- - 64 m
-1 - -3 V
- 12 -
S
- - -10 uA
- - -250 uA
- - +100 nA
- 35 56 nC
- 5 - nC
- 12 - nC
- 12 - ns
- 23 - ns
- 45 - ns
- 60 - ns
- 1440 2300 pF
- 160 - pF
- 120 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-12A, VGS=0V
IS=-12A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 43 - ns
- 75 - nC
Notes:
1.Pulse width limited Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2

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60
T C =25 o C
40
20
-10V
-7.0V
-5.0V
-4.5V
V G =-3.0V
0
0 2 4 6 8 10
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
210
I D = -9 A
T C =25
170
130
90
50
2 4 6 8 10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
16.0
12.0
T j =150 o C
T j =25 o C
8.0
4.0
0.0
0 0.2 0.4 0.6 0.8 1 1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
40
TC=150oC
30
20
10
AP9575AGH/J
-10V
-7.0V
-5.0V
-4.5V
V G =- 4 .0V
0
02468
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D = - 12 A
1.8 V G =-10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3.0
2.5
2.0
1.5
1.0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3

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AP9575AGH/J
12
10
8
I D = -12A
V DS = -48V
6
4
2
0
0 10 20 30 40
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
Operation in this
area limited by
RDS(ON)
10
100us
1ms
1
T C =25 o C
Single Pulse
10ms
100ms
DC
0.1
0.1 1 10 100 1000
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
30
V DS = -5V
T j =25 o C
T j =150 o C
20
10
0
0246
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
f=1.0MHz
2000
1600
C iss
1200
800
400
C oss
C rss
0
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
-10V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4