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CD40101BMS
December 1992
CMOS 9-Bit Parity Generator/Checker
Features
Pinout
• High Voltage Type (20V Rating)
• 100% Tested for Quiescent Current at 20V
CD40101BMS
TOP VIEW
• 5V, 10V and 15V Parametric Ratings
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25oC
• Noise Margin (Over Full Package/Temperature Range)
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Standardized Symmetrical Output Characteristics
D1 1
D2 2
D3 3
D4 4
D9 5
ODD OUT 6
VSS 7
14 VDD
13 D8
12 D7
11 D6
10 D5
9 EVEN OUT
8 INHIBIT
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
Description
The CD40101BMS is a 9-bit (8 data bits plus 1 parity bit)
parity generator/checker. It may be used to detect errors in
data transmission or data retrieval. Odd and even outputs
facilitate odd or even parity generation and checking.
Functional Diagram
INHIBIT
8
When used as a parity generator, a parity bit is supplied
along with the data to generate an even or odd parity output.
D1 1
When used as a parity checker, the received data bits and
parity bits are compared for correct parity. The even or odd
outputs are used to indicate an error in the received data.
D2 2
Word length capability is expandable by cascading. The
CD40101BMS is also provided with an inhibit control. If the
inhibit control is set at logical “1”, the even and odd outputs
go to a logical “0”.
D3 3
D4 4
The CD40101BMS is supplied in these 14 lead outline
packages:
D5 10
DECODE
Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack
H4H
H1B
H3W
D6 11
D7 12
VDD = 14
VSS = 7
EVEN
OUTPUT
9
ODD
OUTPUT
6
D8 13
D9 5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-1286
File Number 3350

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Specifications CD40101BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
θja
Ceramic DIP and FRIT Package . . . . . 80oC/W
θjc
20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W
20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS TEMPERATURE
LIMITS
MIN MAX UNITS
Supply Current
IDD VDD = 20V, VIN = VDD or GND
1
+25oC
- 10 µA
2
+125oC
- 1000 µA
VDD = 18V, VIN = VDD or GND
3
-55oC
- 10 µA
Input Leakage Current
IIL VIN = VDD or GND VDD = 20
1
+25oC
-100
-
nA
2
+125oC
-1000 -
nA
VDD = 18V
3
-55oC
-100
-
nA
Input Leakage Current
IIH VIN = VDD or GND VDD = 20
1
+25oC
- 100 nA
2
+125oC
- 1000 nA
VDD = 18V
3
-55oC
- 100 nA
Output Voltage
VOL15 VDD = 15V, No Load
1, 2, 3
+25oC, +125oC, -55oC -
50 mV
Output Voltage
VOH15 VDD = 15V, No Load (Note 3)
1, 2, 3
+25oC, +125oC, -55oC 14.95
-
V
Output Current (Sink)
IOL5 VDD = 5V, VOUT = 0.4V
1
+25oC
0.53 - mA
Output Current (Sink)
IOL10 VDD = 10V, VOUT = 0.5V
1
+25oC
1.4 - mA
Output Current (Sink)
IOL15 VDD = 15V, VOUT = 1.5V
1
+25oC
3.5 - mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V
1
+25oC
- -0.53 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V
1
+25oC
- -1.8 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V
1
+25oC
- -1.4 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V
1
+25oC
- -3.5 mA
N Threshold Voltage
VNTH VDD = 10V, ISS = -10µA
1
+25oC
-2.8 -0.7 V
P Threshold Voltage
VPTH VSS = 0V, IDD = 10µA
1
+25oC
0.7 2.8
V
Functional
F VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
7
7
+25oC
+25oC
VOH > VOL < V
VDD/2 VDD/2
VDD = 18V, VIN = VDD or GND
8A
+125oC
VDD = 3V, VIN = VDD or GND
8B
-55oC
Input Voltage Low
(Note 2)
VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC -
1.5 V
Input Voltage High
(Note 2)
VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5
-
V
Input Voltage Low
(Note 2)
VIL VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25oC, +125oC, -55oC -
4V
Input Voltage High
(Note 2)
VIH VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25oC, +125oC, -55oC 11
-
V
NOTES: 1. All voltages referenced to device GND, 100% testing being 3. For accuracy, voltage is measured differentially to VDD. Limit
implemented.
is 0.050V max.
2. Go/No Go test with limits applied to inputs.
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Specifications CD40101BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Propagation Delay
Data-In To Output
Propagation Delay
Inhibit-In to Output
Transition Time
SYMBOL CONDITIONS (NOTE 1, 2)
TPHL1 VDD = 5V, VIN = VDD or GND
TPLH1
TPHL2 VDD = 5V, VIN = VDD or GND
TPLH2
TTHL VDD = 5V, VIN = VDD or GND
TTLH
GROUP A
SUBGROUPS TEMPERATURE
9 +25oC
10, 11
+125oC, -55oC
9 +25oC
10, 11
+125oC, -55oC
9 +25oC
10, 11
+125oC, -55oC
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
LIMITS
MIN MAX
- 700
- 945
- 280
- 378
- 200
- 270
UNITS
ns
ns
ns
ns
ns
ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
SYMBOL
CONDITIONS
IDD VDD = 5V, VIN = VDD or GND
VDD = 10V, VIN = VDD or GND
VDD = 15V, VIN = VDD or GND
Output Voltage
Output Voltage
Output Voltage
Output Voltage
Output Current (Sink)
VOL VDD = 5V, No Load
VOL VDD = 10V, No Load
VOH VDD = 5V, No Load
VOH VDD = 10V, No Load
IOL5 VDD = 5V, VOUT = 0.4V
Output Current (Sink)
IOL10 VDD = 10V, VOUT = 0.5V
Output Current (Sink)
IOL15 VDD = 15V, VOUT = 1.5V
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V
Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V
Input Voltage Low
VIL VDD = 10V, VOH > 9V, VOL <
1V
NOTES
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
TEMPERATURE
-55oC, +25oC
+125oC
-55oC, +25oC
+125oC
-55oC, +25oC
+125oC
+25oC, +125oC,
-55oC
+25oC, +125oC,
-55oC
+25oC, +125oC,
-55oC
+25oC, +125oC,
-55oC
+125oC
-55oC
+125oC
-55oC
+125oC
-55oC
+125oC
-55oC
+125oC
-55oC
+125oC
-55oC
+125oC
-55oC
+25oC, +125oC,
-55oC
LIMITS
MIN MAX
-5
- 150
- 10
- 300
- 10
- 600
- 50
- 50
4.95 -
9.95 -
0.36 -
0.64 -
0.9 -
1.6 -
2.4 -
4.2 -
- -0.36
- -0.64
- -1.15
- -2.0
- -0.9
- -1.6
- -2.4
- -4.2
-3
UNITS
µA
µA
µA
µA
µA
µA
mV
mV
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
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Specifications CD40101BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
Input Voltage High
Propagation Delay
Data to Output
Propagation Delay
Inhibit to Output
Transition Time
Input Capacitance
SYMBOL
CONDITIONS
VIH VDD = 10V, VOH > 9V, VOL < 1V
TPHL1
TPLH1
TPHL2
TPLH2
TTLH
TTHL
CIN
VDD = 10V
VDD = 15V
VDD = 10V
VDD = 15V
VDD = 10V
VDD = 15V
Any Input
NOTES
1, 2
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2
TEMPERATURE
+25oC, +125oC,
-55oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
MIN
7
-
-
-
-
-
-
-
MAX
-
UNITS
V
300 ns
200 ns
140 ns
100 ns
100 ns
80 ns
7.5 pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on
initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
N Threshold Voltage
N Threshold Voltage
Delta
P Threshold Voltage
P Threshold Voltage
Delta
Functional
Propagation Delay Time
SYMBOL
CONDITIONS
IDD VDD = 20V, VIN = VDD or GND
VNTH VDD = 10V, ISS = -10µA
VTN VDD = 10V, ISS = -10µA
VTP
VTP
VSS = 0V, IDD = 10µA
VSS = 0V, IDD = 10µA
F
TPHL
TPLH
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
VDD = 5V
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
NOTES
1, 4
1, 4
1, 4
TEMPERATURE
+25oC
+25oC
+25oC
MIN
-
-2.8
-
1, 4
+25oC
0.2
1, 4
+25oC
-
1
1, 2, 3, 4
+25oC
+25oC
VOH >
VDD/2
-
3. See Table 2 for +25oC limit.
4. Read and Record
MAX
25
-0.2
±1
2.8
±1
VOL <
VDD/2
1.35 x
+25oC
Limit
UNITS
µA
V
V
V
V
V
ns
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-2
Output Current (Sink)
Output Current (Source)
IDD
IOL5
IOH5A
± 1.0µA
± 20% x Pre-Test Reading
± 20% x Pre-Test Reading
CONFORMANCE GROUP
Initial Test (Pre Burn-In)
Interim Test 1 (Post Burn-In)
TABLE 6. APPLICABLE SUBGROUPS
MIL-STD-883
METHOD
GROUP A SUBGROUPS
100% 5004
1, 7, 9
100% 5004
1, 7, 9
READ AND RECORD
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
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Specifications CD40101BMS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
READ AND RECORD
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
Subgroups 1, 2, 3, 9, 10, 11
Subgroups 1, 2 3
CONFORMANCE GROUPS
Group E Subgroup 2
TABLE 7. TOTAL DOSE IRRADIATION
MIL-STD-883
METHOD
TEST
PRE-IRRAD
POST-IRRAD
5005
1, 7, 9
Table 4
READ AND RECORD
PRE-IRRAD
POST-IRRAD
1, 9 Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
OPEN
GROUND
VDD
9V ± -0.5V
50kHz
25kHz
Static Burn-In 1
Note 1
6, 9
1-5, 7, 8, 10-13
14
Static Burn-In 2
Note 1
6, 9
7 1-5, 8, 10-14
Dynamic Burn-
In Note 1
-
4, 7
12, 14
6, 9
2, 3, 5, 8, 10
1, 11, 13
Irradiation
Note 2
6, 9
7 1-5, 8, 10-14
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V
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