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CD40106BMS
December 1992
CMOS Hex Schmitt Triggers
Features
Pinout
• High Voltage Type (20V Rating)
• Schmitt Trigger Action with No External Components
CD40106BMS
TOP VIEW
• Hysteresis Voltage (Typ.)
- 0.9V at VDD = 5V
- 2.3V at VDD = 10V
- 3.5V at VDD = 15V
• Noise Immunity Greater than 50%
• No Limit on Input Rise and Fall Times
• Low VDD to VSS Current During Slow Input Ramp
• 100% Tested for Quiescent Current at 20V
A1
G=A 2
B3
H=B 4
C5
I=C 6
VSS 7
14 VDD
13 F
12 L = F
11 E
10 K = E
9D
8 J=D
• 5V, 10V and 15V Parametric Ratings
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25oC
Functional Diagram
• Standardized Symmetrical Output Characteristics
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
1
A
3
B
2
G=A
4
H=B
Applications
5
C
6
I=C
• Wave and Pulse Shapers
• High Noise Environment Systems
• Monostable Multivibrators
• Astable Multivibrators
9
D
11
E
8
J=D
10
K=E
Description
13
F
12
L=F
CD40106BMS consists of six Schmitt trigger circuits. Each
circuit functions as an inverter with Schmitt trigger action on
the input. The trigger switches at different points for positive
and negative going signals. The difference between the
positive going voltage (VP) and the negative going voltage
(VN) is defined as hysteresis voltage (VH) (see Figure 17).
The CD40106BMS is supplied in these 14 lead outline
packages:
Logic Diagram
A*
1 (3, 5, 9, 11, 13)
Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack
H4Q
H1B
H3W
* ALL INPUTS ARE PROTECTED
BY CMOS PROTECTION
NETWORK
*G
2 (4, 6, 8, 10, 12)
VDD
FIGURE 1. 1 OF 6 SCHMITT TRIGGERS
VSS
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-1327
File Number 3354

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Specifications CD40106BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
θja
Ceramic DIP and FRIT Package . . . . . 80oC/W
θjc
20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W
20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
SYMBOL
CONDITIONS (NOTE 1)
IDD VDD = 20V, VIN = VDD or GND
Input Leakage Current
VDD = 18V, VIN = VDD or GND
IIL VIN = VDD or GND VDD = 20
Input Leakage Current
VDD = 18V
IIH VIN = VDD or GND VDD = 20
VDD = 18V
Output Voltage
VOL15 VDD = 15V, No Load
Output Voltage
VOH15 VDD = 15V, No Load (Note 2)
Output Current (Sink)
IOL5 VDD = 5V, VOUT = 0.4V
Output Current (Sink)
IOL10 VDD = 10V, VOUT = 0.5V
Output Current (Sink)
IOL15 VDD = 15V, VOUT = 1.5V
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V
N Threshold Voltage
VNTH VDD = 10V, ISS = -10µA
P Threshold Voltage
VPTH VSS = 0V, IDD = 10µA
Functional
F VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Positive Trigger
Threshold Voltage
(See Figure 17)
VP5
VP10
VP15
VDD = 5V
VDD = 10V
VDD = 15V
Negative Trigger
Threshold Voltage
(See Figure 17)
VN5
VN10
VN15
VDD = 5V
VDD = 10V
VDD = 15V
Hysteresis Voltage
(See Figure 17)
VH5 VDD = 5V
VH10 VDD = 10V
VH15 VDD = 15V
GROUP A
SUBGROUPS TEMPERATURE
LIMITS
MIN MAX UNITS
1
+25oC
- 2 µA
2
+125oC
- 200 µA
3
-55oC
- 2 µA
1
+25oC
-100
-
nA
2
+125oC
-1000 -
nA
3
-55oC
-100
-
nA
1
+25oC
- 100 nA
2
+125oC
- 1000 nA
3
-55oC
- 100 nA
1, 2, 3
+25oC, +125oC, -55oC -
50 mV
1, 2, 3
+25oC, +125oC, -55oC 14.95
-
V
1
+25oC
0.53 - mA
1
+25oC
1.4 - mA
1
+25oC
3.5 - mA
1
+25oC
- -0.53 mA
1
+25oC
- -1.8 mA
1
+25oC
- -1.4 mA
1
+25oC
- -3.5 mA
1
+25oC
-2.8 -0.7 V
1
+25oC
0.7 2.8
V
7
+25oC
VOH > VOL < V
7
+25oC
VDD/2 VDD/2
8A +125oC
8B -55oC
1, 2, 3
+25oC, +125oC, -55oC 2.2
3.6
V
1, 2, 3
+25oC, +125oC, -55oC 4.6
7.1
V
1, 2, 3
+25oC, +125oC, -55oC 6.8 10.8
V
1, 2, 3
+25oC, +125oC, -55oC 0.9
2.8
V
1, 2, 3
+25oC, +125oC, -55oC 2.5
5.2
V
1, 2, 3
+25oC, +125oC, -55oC 4
7.4
V
1, 2, 3
+25oC, +125oC, -55oC 0.3
1.6
V
1, 2, 3
+25oC, +125oC, -55oC 1.2
3.4
V
1, 2, 3
+25oC, +125oC, -55oC 1.6
5.0
V
NOTES: 1. All voltages referenced to device GND, 100% testing being 3. For accuracy, voltage is measured differentially to VDD. Limit
implemented.
is 0.050V max.
2. Go/No Go test with limits applied to inputs.
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Specifications CD40106BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Propagation Delay
Transition Time
SYMBOL CONDITIONS (NOTE 1, 2)
TPHL VDD = 5V, VIN = VDD or GND
TPLH
TTHL VDD = 5V, VIN = VDD or GND
TTLH
GROUP A
SUBGROUPS TEMPERATURE
9 +25oC
10, 11
+125oC, -55oC
9 +25oC
10, 11
+125oC, -55oC
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
LIMITS
MIN MAX
- 280
- 378
- 200
- 270
UNITS
ns
ns
ns
ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
SYMBOL
CONDITIONS
IDD VDD = 5V, VIN = VDD or GND
VDD = 10V, VIN = VDD or GND
VDD = 15V, VIN = VDD or GND
Output Voltage
Output Voltage
Output Voltage
Output Voltage
Output Current (Sink)
VOL VDD = 5V, No Load
VOL VDD = 10V, No Load
VOH VDD = 5V, No Load
VOH VDD = 10V, No Load
IOL5 VDD = 5V, VOUT = 0.4V
Output Current (Sink)
IOL10 VDD = 10V, VOUT = 0.5V
Output Current (Sink)
IOL15 VDD = 15V, VOUT = 1.5V
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V
Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V
Propagation Delay
Transition Time
TPHL
TPLH
TTHL
TTLH
VDD = 10V
VDD = 15V
VDD = 10V
VDD = 15V
NOTES
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
TEMPERATURE
-55oC, +25oC
+125oC
-55oC, +25oC
+125oC
-55oC, +25oC
+125oC
+25oC, +125oC,
-55oC
+25oC, +125oC,
-55oC
+25oC, +125oC,
-55oC
+25oC, +125oC,
-55oC
+125oC
-55oC
+125oC
-55oC
+125oC
-55oC
+125oC
-55oC
+125oC
-55oC
+125oC
-55oC
+125oC
-55oC
+25oC
+25oC
+25oC
+25oC
LIMITS
MIN MAX
-1
- 30
-2
- 60
-2
- 120
- 50
- 50
4.95 -
9.95 -
0.36 -
0.64 -
0.9 -
1.6 -
2.4 -
4.2 -
- -0.36
- -0.64
- -1.15
- -2.0
- -0.9
- -1.6
- -2.4
- -4.2
- 140
- 120
- 100
- 80
UNITS
µA
µA
µA
µA
µA
µA
mV
mV
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
ns
ns
ns
ns
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Specifications CD40106BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
Input Capacitance
SYMBOL
CONDITIONS
CIN Any Input
NOTES
1, 2
TEMPERATURE
+25oC
MIN
-
MAX
7.5
UNITS
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on
initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K., Input TR, TF < 20ns
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
N Threshold Voltage
N Threshold Voltage
Delta
P Threshold Voltage
P Threshold Voltage
Delta
Functional
Propagation Delay Time
SYMBOL
CONDITIONS
IDD VDD = 20V, VIN = VDD or GND
VNTH VDD = 10V, ISS = -10µA
VTN VDD = 10V, ISS = -10µA
VTP
VTP
VSS = 0V, IDD = 10µA
VSS = 0V, IDD = 10µA
F
TPHL
TPLH
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
VDD = 5V
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
NOTES
1, 4
1, 4
1, 4
TEMPERATURE
+25oC
+25oC
+25oC
MIN
-
-2.8
-
1, 4
+25oC
0.2
1, 4
+25oC
-
1
1, 2, 3, 4
+25oC
+25oC
VOH >
VDD/2
-
3. See Table 2 for +25oC limit.
4. Read and Record
MAX
7.5
-0.2
±1
2.8
±1
VOL <
VDD/2
1.35 x
+25oC
Limit
UNITS
µA
V
V
V
V
V
ns
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-1
Output Current (Sink)
Output Current (Source)
IDD
IOL5
IOH5A
± 0.2µA
± 20% x Pre-Test Reading
± 20% x Pre-Test Reading
CONFORMANCE GROUP
Initial Test (Pre Burn-In)
Interim Test 1 (Post Burn-In)
Interim Test 2 (Post Burn-In)
PDA (Note 1)
Interim Test 3 (Post Burn-In)
PDA (Note 1)
Final Test
Group A
TABLE 6. APPLICABLE SUBGROUPS
MIL-STD-883
METHOD
GROUP A SUBGROUPS
100% 5004
1, 7, 9
100% 5004
1, 7, 9
100% 5004
1, 7, 9
100% 5004
1, 7, 9, Deltas
100% 5004
1, 7, 9
100% 5004
1, 7, 9, Deltas
100% 5004
2, 3, 8A, 8B, 10, 11
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
READ AND RECORD
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
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Specifications CD40106BMS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
READ AND RECORD
Subgroups 1, 2, 3, 9, 10, 11
Subgroups 1, 2 3
CONFORMANCE GROUPS
Group E Subgroup 2
TABLE 7. TOTAL DOSE IRRADIATION
MIL-STD-883
METHOD
TEST
PRE-IRRAD
POST-IRRAD
5005
1, 7, 9
Table 4
READ AND RECORD
PRE-IRRAD
POST-IRRAD
1, 9 Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
OPEN
GROUND
VDD
9V ± -0.5V
50kHz
25kHz
Static Burn-In 1 2, 4, 6, 8, 10, 12 1, 3, 5, 7, 9, 11, 13
Note 1
14
Static Burn-In 2 2, 4, 6, 8, 10, 12
Note 1
7
1, 3, 5, 9, 11,
13, 14
Dynamic Burn-
In Note 1
-
7 14 2, 4, 6, 8, 10, 12 1, 3, 5, 9, 11, 13
Irradiation
Note 2
2, 4, 6, 8, 10, 12
7
1, 3, 5, 9, 11,
13, 14
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V
Typical Performance Characteristics
AMBIENT TEMPERATURE (TA) = +25oC
AMBIENT TEMPERATURE (TA) = +25oC
30 GATE-TO-SOURCE VOLTAGE (VGS) = 15V
25
20
15
10V
10
5 5V
0 5 10 15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
15.0
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
12.5
10.0
10V
7.5
5.0
2.5
5V
0 5 10 15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
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