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BZX384-Series
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
Test current IZT
VZ specification
Int. construction
2.4 to 75
2; 5
Pulse current
Single
UNIT
V
mA
FEATURES
• Silicon planar Zener diodes
Available
• The Zener voltages are graded according to
the international E24 standard
• Standard Zener voltage tolerance is ± 5 %;
replace “C” with “B” for ± 2 % tolerance
• AEC-Q101 qualified available
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZX384C2V4-E3-08 to BZX384C75-E3-08
BZX384B2V4-E3-08 to BZX384B75-E3-08
3000 (8 mm tape on 7" reel)
BZX384C2V4-HE3-08 to BZX384C75-HE3-08
15 000/box
BZX384-series
BZX384B2V4-HE3-08 to BZX384B75-HE3-08
BZX384C2V4-E3-18 to BZX384C75-E3-18
BZX384B2V4-E3-18 to BZX384B75-E3-18
10 000 (8 mm tape on 13" reel)
BZX384C2V4-HE3-18 to BZX384C75-HE3-18
10 000/box
BZX384B2V4-HE3-18 to BZX384B75-HE3-18
PACKAGE
PACKAGE NAME
SOD-323
WEIGHT
4.3 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Power dissipation
Device on fiberglass substrate
Thermal resistance junction to ambient air Valid that electrodes are kept at ambient temperature
Junction temperature
Storage temperature range
Operating temperature range
Ptot
RthJA
Tj
Tstg
Top
VALUE
200
650
150
-65 to +150
-55 to +150
UNIT
mW
K/W
°C
°C
°C
Rev. 2.1, 14-Oct-16
1 Document Number: 85764
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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BZX384-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
MARKING
CODE
ZENER VOLTAGE
RANGE
VZ at IZT1
TEST
CURRENT
IZT1
IZT2
REVERSE
LAEKAGE
CURRENT
IR at VR
DYNAMIC
RESISTANCE
ZZ at IZT1 ZZK at IZT2
V mA μA V
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ at IZT1
10-4/°C
MIN. NOM. MAX.
MAX.
TYP.
TYP.
MIN. MAX.
BZX384C2V4
W1
2.2 2.4 2.6
5
1 50
1
70 (100)
275
-9 -4
BZX384C2V7
W2
2.5 2.7 2.9
5
1 20
1 75 (100) 300 (600) - 9 - 4
BZX384C3V0
W3
2.8 3.0 3.2
5
1 10
1
80 (95) 325 (600) - 9
-3
BZX384C3V3
W4
3.1 3.3 3.5
5
1
5
1
85 (95) 350 (600) - 8
-3
BZX384C3V6
W5
3.4 3.6 3.8
5
1
5
1
85 (90) 375 (600) - 8
-3
BZX384C3V9
W6
3.7 3.9 4.1
5
1
3
1
85 (90) 400 (600) - 7
-3
BZX384C4V3
W7
4 4.3 4.6
5
1
3
1
80 (90) 410 (600) - 6
-1
BZX384C4V7
W8 4.4 4.7 5 5 1 3
2 50 (80) 425 (500) - 5 2
BZX384C5V1
W9
4.8 5.1 5.4
5
1
2
2 40 (60) 400 (480) - 3 4
BZX384C5V6
WA 5.2 5.6 6 5 1 1
2 15 (40) 80 (400) - 2 6
BZX384C6V2
WB
5.8 6.2 6.6
5
1
3
4
6 (10) 40 (150) - 1
7
BZX384C6V8
WC
6.4 6.8 7.2
5
1
2
4
6 (15) 30 (80)
2
7
BZX384C7V5
WD
7 7.5 7.9
5
11
5
6 (15) 30 (80)
3
7
BZX384C8V2
WE
7.7 8.2 8.7
5
1 0.7
5
6 (15) 40 (80)
4
7
BZX384C9V1
WF
8.5 9.1 9.6
5
1 0.5
6
6 (15) 40 (100)
5
8
BZX384C10
WG 9.4 10 10.6 5
1 0.2
7
8 (20) 50 (150)
5
8
BZX384C11
WH 10.4 11 11.6 5
1 0.1
8
10 (20) 50 (150)
5
9
BZX384C12
WI 11.4 12 12.7 5
1 0.1
8
10 (25) 50 (150)
6
9
BZX384C13
WK 12.4 13 14.1 5
1 0.1
8
10 (30) 50 (170)
7
9
BZX384C15
BZX384C16
BZX384C18
BZX384C20
BZX384C22
BZX384C24
BZX384C27
BZX384C30
BZX384C33
BZX384C36
BZX384C39
BZX384C43
BZX384C47
BZX384C51
BZX384C56
BZX384C62
BZX384C68
BZX384C75
WL 13.8 15 15.6 5
WM 15.3 16 17.1 5
WN 16.8 18 19.1 5
WO 18.8 20 21.2 5
WP 20.8 22 23.3 5
WR 22.8 24 25.6 5
WS 25.1 27 28.9 2
WT
28 30 32
2
WU
31 33 35
2
WW
34 36 38
2
WX
37 39 41
2
WY
40 43 46
2
WZ
44 47 50
2
X1
48 51 54
2
X2
52 56 60
2
X3
58 62 66
2
X4
64 68 72
2
X5
70 75 79
2
1 0.05 0.7 VZnom. 10 (30) 50 (200)
7
1 0.05 0.7 VZnom. 10 (40) 50 (200)
8
1 0.05 0.7 VZnom. 10 (45) 50 (225)
8
1 0.05 0.7 VZnom. 15 (55) 60 (225)
8
1 0.05 0.7 VZnom. 20 (55) 60 (250)
8
1 0.05 0.7 VZnom. 25 (70) 60 (250)
8
0.5 0.05 0.7 VZnom. 25 (80) 65 (300)
8
0.5 0.05 0.7 VZnom. 30 (80) 70 (300)
8
0.5 0.05 0.7 VZnom. 35 (80) 75 (325)
8
0.5 0.05 0.7 VZnom. 35 (90) 80 (350)
8
0.5 0.05 0.7 VZnom. 40 (130) 80 (350)
10
0.5 0.05 0.7 VZnom. 45 (150) 85 (375)
10
0.5 0.05 0.7 VZnom. 50 (170) 85 (375)
10
0.5 0.05 0.7 VZnom. 60 (180) 85 (400)
8
0.5 0.05 0.7 VZnom. 70 (200) 100 (425) 10
0.5 0.05 0.7 VZnom. 80 (215) 100 (450) 10
0.5 0.05 0.7 VZnom. 90 (240) 150 (475) 10
0.5 0.05 0.7 VZnom. 95 (255) 170 (500) 10
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
10
12
12
12
12
Rev. 2.1, 14-Oct-16
2 Document Number: 85764
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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www.vishay.com
BZX384-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
MARKING
CODE
ZENER VOLTAGE
RANGE
VZ at IZT1
TEST
CURRENT
IZT1 IZT2
REVERSE
LEAKAGE
CURRENT
IR at VR
DYNAMIC
RESISTANCE
ZZ at IZT1 ZZK at IZT2
V mA μA V
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ at IZT1
10-4/°C
MIN. NOM. MAX.
MAX.
TYP.
TYP.
MIN. MAX.
BZX384B2V4
W1
2.35 2.4 2.45 5
1 50
1
70 (100)
275
-9 -4
BZX384B2V7
W2
2.65 2.7 2.75 5
1 20
1 75 (100) 300 (600) - 9
-3
BZX384B3V0
W3
2.94 3.0 3.06 5
1 10
1 80 (95) 325 (600) - 8 - 3
BZX384B3V3
W4
3.23 3.3 3.37 5
1
5
1 85 (95) 350 (600) - 8 - 3
BZX384B3V6
W5
3.53 3.6 3.67 5
1
5
1 85 (90) 375 (600) - 7 - 3
BZX384B3V9
W6
3.82 3.9 3.98 5
1
3
1 85 (90) 400 (600) - 6 - 1
BZX384B4V3
W7
4.21 4.3 4.39 5
1
3
1 80 (90) 410 (600) - 5
2
BZX384B4V7
W8
4.61 4.7 4.79 5
1
3
2 50 (80) 425 (500) - 3
4
BZX384B5V1
W9 5 5.1 5.2 5 1 2
2 40 (60) 400 (480) - 2
6
BZX384B5V6
WA
5.49 5.6 5.71 5
1
1
2
15 (40) 80 (400)
-1
7
BZX384B6V2
WB 6.08 6.2 6.32 5 1 3
4
6 (10) 40 (150)
2
7
BZX384B6V8
WC 6.66 6.8 6.94 5 1 2
4
6 (15) 30 (80)
3
7
BZX384B7V5
WD 7.35 7.5 7.65 5 1 1
5
6 (15) 30 (80)
4
7
BZX384B8V2
WE
8.04 8.2 8.36 5
1 0.7
5
6 (15) 40 (80)
5
8
BZX384B9V1
WF
8.92 9.1 9.28 5
1 0.5
6
6 (15) 40 (100)
5
8
BZX384B10
WG
9.8 10 10.2 5
1 0.2
7
8 (20) 50 (150)
5
9
BZX384B11
WH 10.8 11 11.2 5 1 0.1
8
10 (20) 50 (150)
6
9
BZX384B12
WI
11.8 12 12.2 5
1 0.1
8
10 (25) 50 (150)
7
9
BZX384B13
WK 12.7 13 13.3 5 1 0.1
8
10 (30) 50 (170)
7
9
BZX384B15
BZX384B16
BZX384B18
BZX384B20
BZX384B22
BZX384B24
BZX384B27
BZX384B30
BZX384B33
BZX384B36
BZX384B39
BZX384B43
BZX384B47
BZX384B51
BZX384B56
BZX384B62
BZX384B68
BZX384B75
WL
14.7 15 15.3 5
1 0.05 0.7 VZnom. 10 (30) 50 (200)
8
WM 15.7 16 16.3 5 1 0.05 0.7 VZnom. 10 (40) 50 (200) 8
WN 17.6 18 18.4 5 1 0.05 0.7 VZnom. 10 (45) 50 (225) 8
WO 19.6 20 20.4 5 1 0.05 0.7 VZnom. 15 (55) 60 (225) 8
WP
21.6 22 22.4 5
1 0.05 0.7 VZnom. 20 (55) 60 (250)
8
WR
23.5 24 24.5 5
1 0.05 0.7 VZnom. 25 (70) 60 (250)
8
WS 26.5 27 27.5 2 0.5 0.05 0.7 VZnom. 25 (80) 65 (300) 8
WT 29.4 30 30.6 2 0.5 0.05 0.7 VZnom. 30 (80) 70 (300) 8
WU 32.3 33 33.7 2 0.5 0.05 0.7 VZnom. 35 (80) 75 (325) 8
WW
35.3 36 36.7 2 0.5 0.05 0.7 VZnom. 35 (90) 80 (350)
10
WX
38.2 39 39.8 2 0.5 0.05 0.7 VZnom. 40 (130) 80 (350)
10
WY
42.1 43 43.9 2 0.5 0.05 0.7 VZnom. 45 (150) 85 (375)
10
WZ
46.1 47 47.9 2 0.5 0.05 0.7 VZnom. 50 (170) 85 (375)
10
X1 50 51 52 2 0.5 0.05 0.7 VZnom. 60 (180) 85 (400) 10
X2 54.9 56 57.1 2 0.5 0.05 0.7 VZnom. 70 (200) 100 (425) 10
X3 60.8 62 63.2 2 0.5 0.05 0.7 VZnom. 80 (215) 100 (450) 10
X4 66.6 68 69.4 2 0.5 0.05 0.7 VZnom. 90 (240) 150 (475) 10
X5 73.5 75 76.5 2 0.5 0.05 0.7 VZnom. 95 (255) 170 (500) 10
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
12
12
12
12
12
Rev. 2.1, 14-Oct-16
3 Document Number: 85764
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BZX384-Series
Vishay Semiconductors
mA
103
102
IF 10
1
10-1
10-2
10-3
10-4
10-5
0
18114
TJ = 100 °C
TJ = 25 °C
0.2 0.4 0.6 0.8 1V
VF
Fig. 1 - Forward characteristics
Ω
100
5
4
rzj
3
2
10
5
4
3
2
1
0.1
18119
2
51 2
TJ = 25 °C
33
27
22
18
15
12
10
6.8/8.2
6.2
5 10 2
IZ
5 100 mA
Fig. 4 - Dynamic Resistance vs. Zener Current
mW
250
200
Ptot
150
100
50
0
0
18192
100
Tamb
200 °C
Fig. 2 - Admissible Power Dissipation vs.
Ambient Temperature
Ω
103
7
5
4
Rzj
3 47 + 51
43
2 39
36
102
7
5
4
3
2
Tj = 25 °C
10
0.1
18120
2 3 45
1 2 3 4 5 10
IZ mA
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
1000
5
4
3
rzj 2
100
5
4
3
2
TJ = 25 °C
10
5
4
3
2
1
0.1 2
18117
51 2
5 10 2
I
Z
2.7
3.6
4.7
5.1
5.6
5 100 mA
Fig. 3 - Dynamic Resistance vs. Zener Current
Ω
103
Rzth
5
4
3
2
102
5
4
3
2
Rzth
=
RthA
x
VZ
x
ΔVZ
ΔTj
10
5
4
3 negative
2
1
1
18121
2 3 45
positive
10 2 3 4 5 100 V
VZ at IZ = 5 mA
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Rev. 2.1, 14-Oct-16
4 Document Number: 85764
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Ω
100
7
5
4
Rzj 3
2
10
7
5
4
3
2
1
1
18122
2 3 45
TIZj
=
=
25 °C
5 mA
10 2 3 4 5 100 V
VZ
Fig. 7 - Dynamic Resistance vs. Zener Voltage
mV/°C
25
ΔVZ 20
ΔTj 15
10
5 mA
I = 1 mA
Z
20 mA
5
0
-5
1
18135
2 3 45
10 2 3 4 5 100 V
VZ at IZ = 5 mA
V 27 V, I = 2 mA
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
0.8
0.7
0.6
ΔVZ 0.5
0.4
VZ at IZ = 5 mA
0.3
0.2
0.1
0
-1
- 0.2
0
18124
20 40 60
25 15
10
8
7
6.2
5.9
5.6
5.1
3.6 4.7
80 100 120 140 C
Tj
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
BZX384-Series
Vishay Semiconductors
V
9
8
7
ΔVZ 6
5
4
3
2
1
0
-1
0
18194
20 40
VZ at IZ = 2 mA
51
43
36
IZ = 2 mA
60 80 100 120 140 °C
Tj
Fig. 10 - Change of Zener Voltage vs. Junction Temperature
mV/°C
100
ΔVZ 80
ΔTj
60
IZ = 5 mA
40
20
0
0
18195
20 40 60
80 100 V
VZ at IZ = 2 mA
Fig. 11 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
1.6
1.4
1.2
ΔVZ 1
0.8
Δ
V
Z
=
rzth
x
IZ
IZ = 5 mA
VZ 27 V; IZ = 2 mA
0.6
0.4
0.2
0
- 0.2
- 0.4
1
18196
2 3 45
10 2 3 4 5 100 V
VZ at IZ = 5 mA
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Rev. 2.1, 14-Oct-16
5 Document Number: 85764
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000