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BZX384-G-Series
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
Test current IZT
VZ specification
Int. construction
2.4 to 75
2; 5
Pulse current
Single
UNIT
V
mA
FEATURES
• Silicon planar Zener diodes
• The Zener voltages are graded according to the
international E24 standard
• Standard Zener voltage tolerance is ± 5 %;
replace “C” with “B” for ± 2 % tolerance
• AEC-Q101 qualified available
(part number on request)
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-G3 - green, commercial grade
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZX384-G-series
BZX384C2V4-G3-08 to BZX384C75-G3-08
BZX384B2V4-G3-08 to BZX384B75-G3-08
3000 (8 mm tape on 7" reel)
BZX384C2V4-G3-18 to BZX384C75-G3-18
10 000 (8 mm tape on 13" reel)
BZX384B2V4-G3-18 to BZX384B75-G3-18
15 000/box
10 000/box
PACKAGE
PACKAGE NAME
SOD-323
WEIGHT
4 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Power dissipation
Device on fiberglass substrate
Thermal resistance junction to ambient air Valid that electrodes are kept at ambient temperature
Junction temperature
Ptot
RthJA
Tj
Storage temperature range
Tstg
Operating temperature range
Tstg
VALUE
200
650
150
-65 to +150
-55 to +150
UNIT
mW
K/W
°C
°C
°C
Rev. 1.6, 14-Oct-16
1 Document Number: 83335
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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BZX384-G-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
MARKING
CODE
ZENER VOLTAGE
RANGE
VZ at IZT1
TEST
CURRENT
IZT1 IZT2
REVERSE
LEAKAGE
CURRENT
IR at VR
DYNAMIC
RESISTANCE
ZZ at IZT1 ZZK at IZT2
V mA μA V
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ at IZT1
10-4/°C
MIN. NOM. MAX.
MAX.
TYP.
TYP.
MIN. MAX.
BZX384C2V4-G
Y1 2.2 2.4 2.6 5 1 50
1
70 (100)
275
-9 -4
BZX384C2V7-G
Y2 2.5 2.7 2.9 5 1 20
1 75 (100) 300  600) - 9
-4
BZX384C3V0-G
Y3 2.8 3.0 3.2 5 1 10
1 80 (95) 325 (600) - 9
-3
BZX384C3V3-G
Y4 3.1 3.3 3.5 5 1 5
1 85 (95) 350 (600) - 8
-3
BZX384C3V6-G
Y5 3.4 3.6 3.8 5 1 5
1 85 (90) 375 (600) - 8
-3
BZX384C3V9-G
Y6 3.7 3.9 4.1 5 1 3
1 85 (90) 400 (600) - 7
-3
BZX384C4V3-G
Y7
4 4.3 4.6 5 1
3
1 80 (90) 410 (600) - 6
-1
BZX384C4V7-G
Y8
4.4 4.7
5
51
3
2 50 (80) 425 (500) - 5
2
BZX384C5V1-G
Y9
4.8 5.1 5.4 5
1
2
2 40 (60) 400 (480) - 3
4
BZX384C5V6-G
YA
5.2 5.6
6
51
1
2 15 (40) 80 (400) - 2
6
BZX384C6V2-G
YB
5.8 6.2 6.6 5
1
3
4 6 (10) 40 (150) - 1
7
BZX384C6V8-G
YC
6.4 6.8 7.2 5
1
2
4
6 (15) 30 (80)
2
7
BZX384C7V5-G
YD 7 7.5 7.9 5 1 1
5
6 (15) 30 (80)
3
7
BZX384C8V2-G
YE
7.7 8.2 8.7 5
1 0.7
5
6 (15) 40 (80)
4
7
BZX384C9V1-G
YF
8.5 9.1 9.6 5
1 0.5
6
6 (15) 40 (100)
5
8
BZX384C10-G
YG
9.4 10 10.6 5
1 0.2
7
8 (20) 50 (150)
5
8
BZX384C11-G
YH
10.4 11 11.6 5
1 0.1
8
10 (20) 50 (150)
5
9
BZX384C12-G
YI
11.4 12 12.7 5
1 0.1
8
10 (25) 50 (150)
6
9
BZX384C13-G
YK
12.4 13 14.1 5
1 0.1
8
10 (30) 50 (170)
7
9
BZX384C15-G
BZX384C16-G
BZX384C18-G
BZX384C20-G
BZX384C22-G
BZX384C24-G
BZX384C27-G
BZX384C30-G
BZX384C33-G
BZX384C36-G
BZX384C39-G
BZX384C43-G
BZX384C47-G
BZX384C51-G
BZX384C56-G
BZX384C62-G
BZX384C68-G
BZX384C75-G
YL
13.8 15 15.6 5
1 0.05 0.7 VZnom. 10 (30) 50 (200)
7
YM
15.3 16 17.1 5
1 0.05 0.7 VZnom. 10 (40) 50 (200)
8
YN
16.8 18 19.1 5
1 0.05 0.7 VZnom. 10 (45) 50 (225)
8
YO
18.8 20 21.2 5
1 0.05 0.7 VZnom. 15 (55) 60 (225)
8
YP
20.8 22 23.3 5
1 0.05 0.7 VZnom. 20 (55) 60 (250)
8
YR
22.8 24 25.6 5
1 0.05 0.7 VZnom. 25 (70) 60 (250)
8
YS
25.1 27 28.9 2 0.5 0.05 0.7 VZnom. 25 (80) 65 (300)
8
YT
28 30 32 2 0.5 0.05 0.7 VZnom. 30 (80) 70 (300)
8
YU
31 33 35 2 0.5 0.05 0.7 VZnom. 35 (80) 75 (325)
8
YW 34 36 38 2 0.5 0.05 0.7 VZnom. 35 (90) 80 (350) 10
YX 37 39 41 2 0.5 0.05 0.7 VZnom. 40 (130) 80 (350) 10
YY 40 43 46 2 0.5 0.05 0.7 VZnom. 45 (150) 85 (375) 10
YZ 44 47 50 2 0.5 0.05 0.7 VZnom. 50 (170) 85 (375) 10
Z1
48 51 54 2 0.5 0.05 0.7 VZnom. 60 (180) 85 (400)
8
Z2 52 56 60 2 0.5 0.05 0.7 VZnom. 70 (200) 100 (425) 10
Z3 58 62 66 2 0.5 0.05 0.7 VZnom. 80 (215) 100 (450) 10
Z4 64 68 72 2 0.5 0.05 0.7 VZnom. 90 (240) 150 (475) 10
Z5 70 75 79 2 0.5 0.05 0.7 VZnom. 95 (255) 170 (500) 10
9
9.5
9.5
10
10
10
10
10
10
12
12
12
12
10
12
12
12
12
Rev. 1.6, 14-Oct-16
2 Document Number: 83335
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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BZX384-G-Series
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
MARKING
CODE
ZENER VOLTAGE
RANGE
VZ at IZT1
TEST
CURRENT
IZT1 IZT2
REVERSE
LEAKAGE
CURRENT
IR at VR
DYNAMIC
RESISTANCE
ZZ at IZT1 ZZK at IZT2
V mA μA V
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ at IZT1
10-4/°C
MIN. NOM. MAX.
MAX.
TYP.
TYP.
MIN. MAX.
BZX384B2V4-G
C1
2.35 2.4 2.45 5 1
50
1
70 (100)
275
-9 -4
BZX384B2V7-G
C2
2.65 2.7 2.75 5 1
20
1 75 (100) 300  600) - 9
-4
BZX384B3V0-G
C3
2.94 3.0 3.06 5 1
10
1 80 (95) 325 (600) - 9
-3
BZX384B3V3-G
C4 3.23 3.3 3.37 5 1 5
1 85 (95) 350 (600) - 8
-3
BZX384B3V6-G
C5 3.53 3.6 3.67 5 1 5
1 85 (90) 375 (600) - 8
-3
BZX384B3V9-G
C6 3.82 3.9 3.98 5 1 3
1 85 (90) 400 (600) - 7
-3
BZX384B4V3-G
C7 4.21 4.3 4.39 5 1 3
1 80 (90) 410 (600) - 6
-1
BZX384B4V7-G
C8 4.61 4.7 4.79 5 1 3
2 50 (80) 425 (500) - 5
2
BZX384B5V1-G
C9
5 5.1 5.2 5 1
2
2 40 (60) 400 (480) - 3
4
BZX384B5V6-G
CA 5.49 5.6 5.71 5 1 1
2 15 (40) 80 (400) - 2
6
BZX384B6V2-G
CB 6.08 6.2 6.32 5 1 3
4 6 (10) 40 (150) - 1
7
BZX384B6V8-G
CC 6.66 6.8 6.94 5 1 2
4
6 (15) 30 (80)
2
7
BZX384B7V5-G
CD 7.35 7.5 7.65 5 1 1
5
6 (15) 30 (80)
3
7
BZX384B8V2-G
CE 8.04 8.2 8.36 5 1 0.7
5
6 (15) 40 (80)
4
7
BZX384B9V1-G
CF 8.92 9.1 9.28 5 1 0.5
6
6 (15) 40 (100)
5
8
BZX384B10-G
CG 9.8 10 10.2 5 1 0.2
7
8 (20) 50 (150)
5
8
BZX384B11-G
CH 10.8 11 11.2 5 1 0.1
8
10 (20) 50 (150)
5
9
BZX384B12-G
CI 11.8 12 12.2 5 1 0.1
8
10 (25) 50 (150)
6
9
BZX384B13-G
CK 12.7 13 13.3 5 1 0.1
8
10 (30) 50 (170)
7
9
BZX384B15-G
BZX384B16-G
BZX384B18-G
BZX384B20-G
BZX384B22-G
BZX384B24-G
BZX384B27-G
BZX384B30-G
BZX384B33-G
BZX384B36-G
BZX384B39-G
BZX384B43-G
BZX384B47-G
BZX384B51-G
BZX384B56-G
BZX384B62-G
BZX384B68-G
BZX384B75-G
CL
14.7 15 15.3 5 1 0.05 0.7 VZnom. 10 (30) 50 (200)
7
CM 15.7 16 16.3 5 1 0.05 0.7 VZnom. 10 (40) 50 (200) 8
CN 17.6 18 18.4 5 1 0.05 0.7 VZnom. 10 (45) 50 (225) 8
CO 19.6 20 20.4 5 1 0.05 0.7 VZnom. 15 (55) 60 (225) 8
CP
21.6 22 22.4 5 1 0.05 0.7 VZnom. 20 (55) 60 (250)
8
CR
23.5 24 24.5 5 1 0.05 0.7 VZnom. 25 (70) 60 (250)
8
CS
26.5 27 27.5 2 0.5 0.05 0.7 VZnom. 25 (80) 65 (300)
8
CT
29.4 30 30.6 2 0.5 0.05 0.7 VZnom. 30 (80) 70 (300)
8
CU 32.3 33 33.7 2 0.5 0.05 0.7 VZnom. 35 (80) 75 (325) 8
CW 35.3 36 36.7 2 0.5 0.05 0.7 VZnom. 35 (90) 80 (350) 8
CX
38.2 39 39.8 2 0.5 0.05 0.7 VZnom. 40 (130) 80 (350)
10
CY
42.1 43 43.9 2 0.5 0.05 0.7 VZnom. 45 (150) 85 (375)
10
CZ
46.1 47 47.9 2 0.5 0.05 0.7 VZnom. 50 (170) 85 (375)
10
D1 50 51 52 2 0.5 0.05 0.7 VZnom. 60 (180) 85 (400) 10
D2
54.9 56 57.1 2 0.5 0.05 0.7 VZnom. 70 (200) 100 (425)
9
D3
60.8 62 63.2 2 0.5 0.05 0.7 VZnom. 80 (215) 100 (450)
9
D4 66.6 68 69.4 2 0.5 0.05 0.7 VZnom. 90 (240) 150 (475) 10
D5 73.5 75 76.5 2 0.5 0.05 0.7 VZnom. 95 (255) 170 (500) 10
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
Rev. 1.6, 14-Oct-16
3 Document Number: 83335
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BZX384-G-Series
Vishay Semiconductors
mA
103
102
IF 10
1
10-1
10-2
10-3
10-4
10-5
0
18114
TJ = 100 °C
TJ = 25 °C
0.2 0.4 0.6 0.8 1V
VF
Fig. 1 - Forward Characteristics
Ω
100
5
4
rzj
3
2
10
5
4
3
2
1
0.1
18119
2
51 2
TJ = 25 °C
33
27
22
18
15
12
10
6.8/8.2
6.2
5 10 2
IZ
5 100 mA
Fig. 4 - Dynamic Resistance vs. Zener Current
mW
250
200
Ptot
150
100
50
0
0
18192
100
Tamb
200 °C
Fig. 2 - Admissible Power Dissipation vs.
Ambient Temperature
Ω
103
7
5
4
Rzj 3
2
47 + 51
43
39
36
102
7
5
4
3
2
Tj = 25 °C
10
0.1
18120
2 3 45
1 2 3 4 5 10
IZ mA
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
1000
5
4
3
rzj 2
100
5
4
3
2
10
5
4
3
2
1
0.1 2
18117
51 2
TJ = 25 °C
5 10 2
IZ
2.7
3.6
4.7
5.1
5.6
5 100 mA
Fig. 3 - Dynamic Resistance vs. Zener Current
Ω
103
Rzth
5
4
3
2
102
5
4
3
2
Rzth
=
RthA
x
VZ
x
ΔVZ
ΔTj
10
5
4
3 negative
2
1
1
18121
2 3 45
positive
10 2 3 4 5 100 V
VZ at IZ = 5 mA
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Rev. 1.6, 14-Oct-16
4 Document Number: 83335
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Ω
100
7
5
4
Rzj 3
2
10
7
5
4
3
2
1
1
18122
2 3 45
TIZj
=
=
25 °C
5 mA
10 2 3 4 5 100 V
VZ
Fig. 7 - Dynamic Resistance vs. Zener Voltage
mV/°C
25
ΔVZ 20
ΔTj 15
10
5 mA
I = 1 mA
Z
20 mA
5
0
-5
1
18135
2 3 45
10 2 3 4 5 100 V
VZ at IZ = 5 mA
V 27 V, I = 2 mA
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
0.8
0.7
0.6
ΔVZ 0.5
0.4
VZ at IZ = 5 mA
0.3
0.2
0.1
0
-1
- 0.2
0
18124
20 40 60
25 15
10
8
7
6.2
5.9
5.6
5.1
3.6 4.7
80 100 120 140 C
Tj
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
BZX384-G-Series
Vishay Semiconductors
V
9
8
7
ΔVZ 6
5
4
3
2
1
0
-1
0
18194
20 40
VZ at IZ = 2 mA
51
43
36
IZ = 2 mA
60 80 100 120 140 °C
Tj
Fig. 10 - Change of Zener Voltage vs. Junction Temperature
mV/°C
100
ΔVZ 80
ΔTj
60
IZ = 5 mA
40
20
0
0
18195
20 40 60
80 100 V
VZ at IZ = 2 mA
Fig. 11 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
1.6
1.4
1.2
ΔVZ 1
0.8
Δ
V
Z
=
rzth
x
IZ
IZ = 5 mA
VZ 27 V; IZ = 2 mA
0.6
0.4
0.2
0
- 0.2
- 0.4
1
18196
2 3 45
10 2 3 4 5 100 V
VZ at IZ = 5 mA
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener voltage
Rev. 1.6, 14-Oct-16
5 Document Number: 83335
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000