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3DG182
NPN Silicon High Reverse Voltage High Frequency
Middle Power Transistor
Features:
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging.
2. Small volume, light weight, easy installation.
3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit.
4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
(Ta = 25°C )
Parameter name
Specifications
Symbols Unit
ABCDE FGH I
J
Test Condition
Total Dissipation
Ptot mW
700
Ta=25°C
Max. Collector Current ICM mA
300
Junction Temperature Tjm °C
175
Storage Temperature Tstg °C
-55~+175
C-B Breakdown Voltage V(BR)CBO V 60 100 140 180 220 60 100 140 180 220
C-E Breakdown Voltage V(BR)CEO V 60 100 140 180 220 60 100 140 180 220
IC=0.1mA
E-B Breakdown Voltage V(BR)EBO V
5
IE=0.1mA
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
1.0
IC=200mA,
Base- Emitter Saturation
VBE(sat) V
Voltage Drop
1.2
IB=20mA
C-B Leakage Current ICBO uA
1.0
VCB=30V
C-E Leakage Current ICEO uA
2.0
VCE=30V
E-B Leakage Current IEBO uA
1.0
VEB=1.5V
DC Current Gain
hFE
25~180
VCE=2V, IC=200mA
Transition frequency
fT MHz
50
VCE=10V, IC=20mA
100
f=30MHz
hFE Colored:
Color
hFE
Orange
25~40
Yellow
40~55
Green
55~80
Blue
80~120
Purple
120~180
Outline and Dimensions:
Contact: Jandy Lei
Tel.: 13991730782
QQ: 1142478250
sxqlljd@hotmail.com 255