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APTM100SK33T1G
Buck chopper
MOSFET Power Module
VDSS = 1000V
RDSon = 330mΩ typ @ Tj = 25°C
ID = 23A @ Tc = 25°C
56
11
Q1
7
8
CR2
NTC
3
4
12
12
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Power MOS 8™ MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
1000
23
17
140
±30
396
390
18
Unit
V
A
V
mΩ
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTM100SK33T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
IDSS Zero Gate Voltage Drain Current
VDS =1000V
VGS = 0V
Tj = 25°C
Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS = 10V, ID = 18A
330
VGS(th) Gate Threshold Voltage
IGSS Gate – Source Leakage Current
VGS = VDS, ID = 2.5mA
VGS = ±30 V
34
Max
100
500
396
5
±100
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 18A
Resistive switching @ 25°C
VGS = 15V
VBus = 667V
ID = 18A
RG = 2.2Ω
Min Typ Max Unit
7868
825 pF
104
305
55 nC
145
44
40
ns
150
38
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=1200V
IF = 30A
IF = 60A
IF = 30A
1200
V
Tj = 25°C
Tj = 125°C
100
500
µA
Tc = 80°C
30
A
2.6 3.1
3.2 V
Tj = 125°C
1.8
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 30A
VR = 800V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
300
380
360
1700
ns
nC
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC Junction to Case Thermal Resistance
Transistor
Diode
0.32 °C/W
1.2
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
TJ Operating junction temperature range
2500
-40
V
150
TSTG Storage Temperature Range
TC Operating Case Temperature
Torque Mounting torque
To heatsink
-40
-40
M4 2.5
125 °C
100
4.7 N.m
Wt Package Weight
80 g
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APTM100SK33T1G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ
R25 Resistance @ 25°C
B 25/85 T25 = 298.15 K
50
3952
RT
=
R25
exp
B25
/
85
⎜⎜⎝⎛
1
T25
1
T
⎟⎟⎠⎞⎥⎦⎤
T: Thermistor temperature
RT: Thermistor value at T
Max
Unit
kΩ
K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Typical Mosfet Performance Curve
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
0.35
0.9
0.3
0.25
0.7
0.2
0.5
0.15
0.1
0.3
0.05
0
0.1
0.05
Single P ulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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Low Voltage Output Characteristics
60
VGS=10V
50
TJ=25°C
40
30 TJ=125°C
20
10
0
0 5 10 15 20
VDS, Drain to Source Voltage (V)
Normalized RDSon vs. Temperature
3
2.5
VGS=10V
ID=18A
2
1.5
1
0.5
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Gate Charge vs Gate to Source
12
ID=18A
10 TJ=25°C
8
VDS=200V
VDS=500V
6
VDS=800V
4
2
0
0 40 80 120 160 200 240 280 320
Gate Charge (nC)
APTM100SK33T1G
Low Voltage Output Characteristics
40
35 TJ=125°C
30
VGS=6, 7, 8 &9V
25
20
5V
15
10
5 4.5V
0
0 5 10 15 20 25 30
VDS, Drain to Source Voltage (V)
Transfert Characteristics
40
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
30
TJ=125°C
20
TJ=25°C
10
0
123456
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
1000
100
10
Coss
Crss
1
0 50 100 150 200
VDS, Drain to Source Voltage (V)
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APTM100SK33T1G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.4
1.2 0.9
1 0.7
0.8
0.5
0.6
0.3
0.4
0.2
0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
1
10
Forward Current vs Forward Voltage
80
60 TJ=125°C
40
20
TJ=25°C
0
0.0 1.0 2.0 3.0 4.0
VF, Anode to Cathode Voltage (V)
QRR vs. Current Rate Charge
4
TJ=125°C
VR=800V
45 A
3
30 A
2
15 A
1
0
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
Trr vs. Current Rate of Charge
500
TJ=125°C
400 VR=800V
300
45 A
200 30 A
15 A
100
0
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
IRRM vs. Current Rate of Charge
30
TJ=125°C
25 VR=800V
30 A
15 A
20
15 45 A
10
5
0
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
200
160
120
80
40
0
1 10 100 1000
VR, Reverse Voltage (V)
Max. Average Forward Current vs. Case Temp.
50
Duty Cycle = 0.5
40 TJ=175°C
30
20
10
0
25 50 75 100 125 150 175
Case Temperature (ºC)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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