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APTM100A18FTG
Phase leg
MOSFET Power Module
VDSS = 1000V
RDSon = 180mtyp @ Tj = 25°C
ID = 43A @ Tc = 25°C
VBUS
NT C2
Q1
G1
S1
Q2
OUT
G2
S2
0/V BU S
NT C1
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
VB US
S1
G1
G2
S2
0/VBUS
S2
G2
OUT
OUT
NTC2
NTC1
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
1000
43
33
172
±30
210
780
25
50
3000
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTM100A18FTG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS Zero Gate Voltage Drain Current
RDS(on)
VGS(th)
IGSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 1000V Tj = 25°C
VGS = 0V,VDS = 800V Tj = 125°C
VGS = 10V, ID = 21.5A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
3
200
1000
µA
180 210 m
5V
±150 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 43A
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 43A
RG = 2.5
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 43A, RG = 2.5
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 43A, RG = 2.5
Min Typ Max Unit
10.4
1.76 nF
0.32
372
48 nC
244
18
12 ns
155
40
1800
1246
µJ
2846
1558
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
IS
VSD
dv/dt
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery X
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 43A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = - 43A
VR = 670V
diS/dt = 200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS - 43A di/dt 700A/µs VR VDSS Tj 150°C
Min Typ Max Unit
43
33
A
1.3 V
18 V/ns
320 ns
650
7.2 µC
19.5
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APTM100A18FTG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
Junction to Case Thermal resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
TSTG Storage Temperature Range
TC Operating Case Temperature
Torque Mounting torque
To Heatsink M5
Wt Package Weight
Min Typ Max Unit
0.16 °C/W
2500
V
-40 150
-40 125 °C
-40 100
2.5 4.7 N.m
160 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ
R25
B 25/85
Resistance @ 25°C
T25 = 298.15 K
RT
= R25
exp
B
25
/
85

1
T25
1
T

T: Thermistor temperature
RT: Thermistor value at T
50
3952
Max
Unit
k
K
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTM100A18FTG
Typical Performance Curve
0.18
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.14
0.12
0.9
0.7
0.1
0.08
0.06
0.5
0.3
0.04
0.02
0
0.1
0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
10
Low Voltage Output Characteristics
120
100
VGS=15, 10&8V
7V
80 6.5V
60
40
20
0
0
6V
5.5V
5V
5 10 15 20 25 30
VDS, Drain to Source Voltage (V)
1.4 RDS(on) vs Drain Current
Normalized to
1.3 VGS=10V @ 21.5A
1.2 VGS=10V
1.1
1 VGS=20V
0.9
0.8
0
20 40 60 80 100 120
ID, Drain Current (A)
Transfert Characteristics
160
140
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
120
100
80
60
40 TJ=25°C
20
0
0
TJ=125°C
TJ=-55°C
12345678
VGS, Gate to Source Voltage (V)
9
DC Drain Current vs Case Temperature
45
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150
TC, Case Temperature (°C)
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Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
Ciss
1000
Coss
Crss
100
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTM100A18FTG
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID=21.5A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100 limited by RDSon
100µs
1ms
10
1
1
Single pulse
TJ=150°C
TC=25°C
10ms
10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
ID=43A
TJ=25°C
10
VDS=200V
VDS=500V
8 VDS=800V
6
4
2
0
0 100 200 300 400 500
Gate Charge (nC)
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