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S-57M1 Series
www.sii-ic.com
© SII Semiconductor Corporation, 2011-2013
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
Rev.1.2_01
The S-57M1 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with a high-sensitivity, a
high-speed detection and low current consumption.
The output voltage changes when the S-57M1 Series detects the intensity level of magnetic flux density and a polarity
change. Using the S-57M1 Series with a magnet makes it possible to detect the rotation status in various devices.
High-density mounting is possible by using the small SOT-23-3 package.
Due to its high-accuracy magnetic characteristics, the S-57M1 Series can make operation’s dispersion in the system
combined with magnet smaller.
Caution
This product is intended to use in general electronic devices such as consumer electronics, office
equipment, and communications devices. Before using the product in medical equipment or
automobile equipment including car audio, keyless entry and engine control unit, contact to
SII Semiconductor Corporation is indispensable.
Features
Pole detection:
Detection logic for magnetism*1:
Output form*1:
Magnetic sensitivity:
Operation cycle (current consumption):
Power supply voltage range:
Operation temperature range:
Lead-free (Sn 100%), halogen-free*2
Bipolar latch
VOUT = "L" at S pole detection
VOUT = "H" at S pole detection
Nch open-drain output, CMOS output
BOP = 3.0 mT typ.
tCYCLE = 50 μs (1400 μA) typ.
VDD = 2.7 V to 5.5 V
Ta = 40°C to +125°C
*1. The option can be selected.
*2. Refer to "Product Name Structure" for details.
Applications
Motor
Housing equipment
Industrial equipment
Package
SOT-23-3
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HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-57M1 Series
Block Diagrams
1. Nch open-drain output product
VDD
*1
VSS
*1. Parasitic diode
2. CMOS output product
VDD
Chopping
stabilized amplifier
Figure 1
*1
VSS
*1. Parasitic diode
Chopping
stabilized amplifier
Figure 2
Rev.1.2_01
OUT
*1
*1
OUT
*1
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Rev.1.2_01
Product Name Structure
1. Product name
S-57M1 x B x 1 B - M3T1 U
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-57M1 Series
Environmental code
U: Lead-free (Sn 100%), halogen-free
Package name (abbreviation) and packing specifications*1
M3T1: SOT-23-3, Tape
Operation temperature
B: Ta = 40°C to +125°C
Magnetic sensitivity
1: BOP = 3.0 mT typ.
Detection logic for magnetism
L: VOUT = "L" at S pole detection
H: VOUT = "H" at S pole detection
Pole detection
B: Bipolar latch
Output form
N: Nch open-drain output
C: CMOS output
*1. Refer to the tape drawing.
2. Package
Package Name
SOT-23-3
Table 1 Package Drawing Codes
Dimension
MP003-C-P-SD
Tape
MP003-C-C-SD
Reel
MP003-Z-R-SD
3. Product name list
Table 2
Product Name
Output Form
Pole Detection
S-57M1NBL1B-M3T1U Nch open-drain output Bipolar latch
S-57M1NBH1B-M3T1U Nch open-drain output Bipolar latch
S-57M1CBH1B-M3T1U CMOS output
Bipolar latch
Detection Logic
for Magnetism
VOUT = "L" at S pole
detection
VOUT = "H" at S pole
detection
VOUT = "H" at S pole
detection
Remark Please contact our sales office for products other than the above.
Magnetic Sensitivity
(BOP)
3.0 mT typ.
3.0 mT typ.
3.0 mT typ.
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HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-57M1 Series
Rev.1.2_01
Pin Configuration
1. SOT-23-3
Top view
1
23
Pin No.
1
2
3
Table 3
Symbol
VSS
VDD
OUT
Description
GND pin
Power supply pin
Output pin
Figure 3
Absolute Maximum Ratings
Table 4
Item Symbol
Power supply voltage
VDD
Output current
Output voltage
Nch open-drain output
product
CMOS output product
IOUT
VOUT
Power dissipation
PD
Operation ambient temperature
Topr
Storage temperature
Tstg
*1. When mounted on board
[Mounted board]
(1) Board size:
114.3 mm × 76.2 mm × t1.6 mm
(2) Name:
JEDEC STANDARD51-7
(Ta = +25°C unless otherwise specified)
Absolute Maximum Rating
Unit
VSS 0.3 to VSS + 7.0
±2.0
V
mA
VSS 0.3 to VSS + 7.0
V
VSS 0.3 to VDD + 0.3
430*1
40 to +125
40 to +150
V
mW
°C
°C
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
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Rev.1.2_01
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-57M1 Series
Electrical Characteristics
Table 5
Item Symbol
(Ta = +25°C, VDD = 5.0 V, VSS = 0 V unless otherwise specified)
Condition
Min.
Typ. Max.
Unit
Test
Circuit
Power supply voltage VDD
Current consumption IDD
Output voltage
VOUT
Leakage current
ILEAK
Average value
Nch open-drain output Output transistor Nch,
product
IOUT = 2 mA
Output transistor Nch,
CMOS output product
IOUT = 2 mA
Output transistor Pch,
IOUT = 2 mA
Nch open-drain output product
Output transistor Nch, VOUT = 5.5 V
2.7 5.0 5.5
1400 2000
− − 0.4
VDD
0.4
0.4
1
V
μA
V
V
V
μA
1
2
2
3
4
Operation cycle
tCYCLE
50 100 μs
Magnetic Characteristics
Table 6
(Ta = +25°C, VDD = 5.0 V, VSS = 0 V unless otherwise specified)
Item
Symbol
Condition
Min. Typ. Max. Unit Test Circuit
Operation point*1 S pole
BOP
1.4 3.0 4.0 mT
5
Release point*2
N pole
BRP
4.0 3.0 1.4 mT
5
Hysteresis width*3
BHYS
BHYS = BOP BRP
6.0
mT
5
*1. BOP: Operation point
BOP is the value of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied
to the S-57M1 Series by the magnet (S pole) is increased (by moving the magnet closer).
VOUT retains the status until a magnetic flux density of the N pole higher than BRP is applied.
*2. BRP: Release point
BRP is the value of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied
to the S-57M1 Series by the magnet (N pole) is increased (by moving the magnet closer).
VOUT retains the status until a magnetic flux density of the S pole higher than BOP is applied.
*3. BHYS: Hysteresis width
BHYS is the difference of magnetic flux density between BOP and BRP.
Remark The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss.
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