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STGB40H65FB
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Datasheet - production data
TAB
2
3
1
D²PAK
Figure 1: Internal schematic diagram
C(2, TAB)
G(1)
E(3)
Features
Maximum junction temperature: TJ = 175 °C
High speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.6 V (typ.)
@ IC = 40 A
Tight parameter distribution
Safe paralleling
Low thermal resistance
Applications
Photovoltaic inverters
High frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the new HB series
of IGBTs, which represents an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, the slightly positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in safer paralleling
operation.
Order code
STGB40H65FB
G1C2TE3
Table 1: Device summary
Marking
Package
GB40H65FB
D²PAK
Packing
Tape and reel
June 2016
DocID029491 Rev 1
This is information on a product in full production.
1/17
www.st.com

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Contents
Contents
STGB40H65FB
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ................................................................................... 10
4 Package information ..................................................................... 11
4.1 D²PAK package information ............................................................ 11
4.2 D²PAK packing information ............................................................. 14
5 Revision history ............................................................................ 16
2/17 DocID029491 Rev 1

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STGB40H65FB
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VCES
IC
ICP(1)
VGE
PTOT
TSTG
TJ
Collector-emitter voltage (VGE = 0)
Continuous collector current at TC = 25 °C
Continuous collector current at TC = 100 °C
Pulsed collector current
Gate-emitter voltage
Total dissipation at TC = 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)Pulse width limited by maximum junction temperature.
Symbol
RthJC
RthJA
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Electrical ratings
Value
650
80
40
160
±20
283
- 55 to 150
- 55 to 175
Unit
V
A
A
V
W
°C
Value
0.53
62.5
Unit
°C/W
DocID029491 Rev 1
3/17

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Electrical characteristics
STGB40H65FB
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
Parameter
Test conditions
V(BR)CES
Collector-emitter breakdown
voltage
VGE = 0 V, IC = 2 mA
VCE(sat)
Collector-emitter saturation
voltage
VGE(th)
ICES
Gate threshold voltage
Collector cut-off current
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A,
TJ = 125 °C
VGE = 15 V, IC = 40 A,
TJ = 175 °C
VCE = VGE, IC = 1 mA
VGE = 0 V, VCE = 650 V
IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V
Min. Typ. Max. Unit
650 V
1.6 2
1.7 V
1.8
56 7V
25 µA
±250 nA
Table 5: Dynamic characteristics
Symbol
Parameter
Test conditions
Cies Input capacitance
Coes Output capacitance
VCE= 25 V, f = 1 MHz,
VGE = 0 V
Cres Reverse transfer capacitance
Qg Total gate charge
Qge Gate-emitter charge
Qgc Gate-collector charge
VCC = 520 V, IC = 40 A,
VGE = 15 V (see Figure 23:
"Gate charge test circuit")
Min. Typ. Max. Unit
- 5412 -
- 198 - pF
- 107 -
- 210 -
- 39 - nC
- 82 -
4/17 DocID029491 Rev 1

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STGB40H65FB
Symbol
Electrical characteristics
Table 6: Switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Eon(1)
Eoff(2)
Ets
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
VCE = 400 V, IC = 40 A,
VGE = 15 V, RG = 5 Ω
(see Figure 22: "Test
circuit for inductive load
switching" )
VCE = 400 V, IC = 40 A,
VGE = 15 V, RG = 5 Ω
TJ = 175 °C (see Figure
22: "Test circuit for
inductive load switching" )
40 -
ns
13 -
2413 - A/µs
142 -
27 -
ns
498 -
363 -
µJ
861 -
38 -
ns
14 -
2186 - A/µs
141 -
61 -
ns
1417 -
764 -
µJ
2181 -
Notes:
(1)Energy losses include reverse recovery of the external diode. The diode is the same of the co-packed
STGW40H65DFB.
(2)Including the tail of the collector current.
DocID029491 Rev 1
5/17