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STP12NK60Z
STF12NK60Z, STW12NK60Z
N-channel 650 V @Tjmax, 0.53 , 10 A TO-220, TO-220FP, TO-247
Zener-protected SuperMESH™ Power MOSFET
Features
Type
VDSS
RDS(on)
(@Tjmax) max
ID
PW
STP12NK60Z
STF12NK60Z
STW12NK60Z
650 V
650 V
650 V
<0.640 10 A 150 W
<0.640 10 A 35 W
<0.640 10 A 150 W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Application
Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down,
specialties is taken to ensure a very good dv/dt
capability for the most demanding application.
Such series complements ST full range of high
voltage Power MOSFETs.
Table 1. Device summary
Order codes
Marking
STP12NK60Z
STF12NK60Z
STW12NK60Z
P12NK60Z
F12NK60Z
W12NK60Z
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2)
G(1)
Package
TO-220
TO-220FP
TO-247
S(3)
AM01476v1
Packaging
Tube
Tube
Tube
October 2009
Doc ID 11324 Rev 7
1/15
www.st.com
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Contents
Contents
STP12NK60Z, STF12NK60Z, STW12NK60Z
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15 Doc ID 11324 Rev 7

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STP12NK60Z, STF12NK60Z, STW12NK60Z
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220, TO-247 TO-220FP
Unit
VDS
VGS
ID
ID
IDM (2)
PTOT
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
VESD(G-S) Gate source ESD (HBM-C=100 pF, R=1.5 k)
dv/dt (3) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t =1 s;TC = 25 °C)
Tstg Storage temperature
Tj Max operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 10 A, di/dt 200 A/µs, VDD = 480 V
600
±30
10
6.3
40
150
1.2
4.5
10 (1)
6.3 (1)
40 (1)
35
0.27
2500
2500
-55 to 150
150
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
Value
TO-220 TO-247 TO-220FP
Unit
0.83
62.5 50
3.6 °C/W
62.5 °C/W
300 °C
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, ID=IAS, VDD=50 V)
Doc ID 11324 Rev 7
Value
10
260
Unit
A
mJ
3/15