A1SHB.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 A1SHB 데이타시트 다운로드

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SHENZHEN YANGJING MICROELECTRONICS CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
SI2301 P-Channel 20-V(D-S) MOSFET
FEATURE
TrenchFET Power MOSFET
APPLICATIONS
z Load Switch for Portable Devices
z DC/DC Converter
MARKING: A11 SHB
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient(t 5s)
Junction Temperature
Storage Temperature
VDS
VGS
ID
IDM
IS
PD
R θJA
TJ
Tstg
Value
-20
±8
-2.3
-10
-0.72
0.35
357
150
-55 ~+150
Unit
V
A
W
/W
YANGJING
MICROELECTRONICS
www.szyangjing.com
4007-888-606 2

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Electrical characteristics (Ta=25unless otherwise noted)
Parameter
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance a
Forward transconductance a
Dynamicb
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Symbol Test Condition
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0V, ID =-250µA
VDS =VGS, ID =-250µA
VDS =0V, VGS =±8V
VDS =-20V, VGS =0V
VGS =-4.5V, ID =-2.8A
VGS =-2.5V, ID =-2.0A
VDS =-5V, ID =-2.8A
Ciss
Coss
Crss
Qg
VDS =-10V,VGS =0V,f =1MHz
VDS =-10V,VGS =-4.5V,ID =-3A
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
Drain-source body diode characteristics
VDS =-10V,VGS =-2.5V,ID =-3A
f =1MHz
VDD=-10V,
RL=10, ID =-1A,
VGEN=-4.5V,Rg=1
Continuous source-drain diode current IS TC=25
Pulse diode forward current a
Body diode voltage
ISM
VSD IS=-0.7A
Notes :
a.Pulse Test : Pulse Width < 300µs, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
Min Typ Max Units
-20
-0.4 -1
±100
-1
0.090 0.112
0.110 0.142
6.5
V
nA
µA
S
405
75
55
5.5 10
3.3 6
0.7
1.3
6.0
11 20
35 60
30 50
10 20
pF
nC
ns
-1.3
-10
-0.8 -1.2
A
V
YANGJING
MICROELECTRONICS
www.szyangjing.com
4007-888-606 2

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Typical Characteristics
SI2301
-14
T =25
a
Pulsed
-12
Output Characteristics
V = -4.0V,-3.5V,-3.0V,-2.5V
GS
V =-2.0V
GS
-10
-8
-6
V =-1.5V
GS
-4
-2
V =-1.0V
GS
-0
-0 -1 -2 -3 -4
DRAIN TO SOURCE VOLTAGE V (V)
DS
-10
T =25
a
Pulsed
-8
Transfer Characteristics
-6
-4
-2
-0
-0.0
-0.5 -1.0 -1.5 -2.0
GATE TO SOURCE VOLTAGE V (V)
GS
-2.5
R —— I
DS(ON)
D
R —— V
DS(ON)
GS
150 250
T =25
a
T =25
a
Pulsed
Pulsed
120 200
V =-2.5V
90 GS
150
60 V =-4.5V
GS
30
100
I =-3.6A
D
50
0
-0 -2 -4 -6 -8 -10
DRAIN CURRENT I (A)
D
0
-0 -2 -4 -6 -8
GATE TO SOURCE VOLTAGE V (V)
GS
-1
T =25
a
Pulsed
-0.3
-0.1
I —— V
S SD
-0.03
-0.01
-3E-3
-1E-3
-0.2
-0.4 -0.6 -0.8 -1.0
SOURCE TO DRAIN VOLTAGE V (V)
SD
-1.2
YANGJING
MICROELECTRONICS
www.szyangjing.com
4007-888-606 2