FQPF12N65.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 FQPF12N65 데이타시트 다운로드

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FQP12N65/FQPF12N65
650V, 12A N-Channel MOSFET
General Description
The FQP12N65 & FQPF12N65 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
750V@150
12A
< 0.72
TO-220
Top View
TO-220F
D
G
S
Orderable Part Number
FQP12N65
Package Type
TO-220 Pb Free
Form
Tube
Minimum Order Quantity
1000
FQPF12N65L
FQB12N65L
TO-220F
TO-263 Green
Tube
Tape & Reel
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol FQP12N65
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
12
7.7
TC=25°C
Power Dissipation B Derate above 25oC
PD
278
2.2
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
FQP12N65
65
0.5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.45
FQB12N65
650
±30
12*
7.7*
48
5
375
750
30
5
50
0.4
-55 to 150
FQPF12N65
12*
7.7*
40
0.3
300
FQB12N65
65
--
2.5
FQPF12N65
65
--
3.1
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6

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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
BVDSS
/∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=650V, VGS=0V
VDS=520V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=6A
VDS=40V, ID=6A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=520V, ID=12A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=325V, ID=12A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=12A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V
650
750
0.72
1
10
±100
3 3.9 4.5
0.57 0.72
17
0.71 1
12
48
V
V/ oC
µA
nΑ
V
S
V
A
A
1430
120
9
1.7
1792
152
11.5
3.5
2150
185
18
5.3
pF
pF
pF
32 39.8 48
7.5 9.2 11
13.5 16.8 20
36
77
120
63
300 375 450
6 7.5 9
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=5A, VDD=150V, RG=25, Starting TJ=25°C
Page 2 of 6

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
24 100
20
10V
6.5V
VDS=40V
-55°C
16 10
6V
12 125°C
81
4 VGS=5.5V
25°C
0
0 5 10 15 20 25 30
VDS (Volts)
Fig 1: On-Region Characteristics
0.1
2
468
VGS(Volts)
Figure 2: Transfer Characteristics
10
1.2 3
1.0
VGS=10V
0.8
2.5
2 VGS=10V
ID=6A
1.5
0.6
0.4
0
5 10 15 20 25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1
0.5
0
-100 -50 0 50 100 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
200
1.2
1.1
1
0.9
0.8
-100 -50 0 50 100 150 200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
1.0E+02
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E2-0.22
1.0E-03
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6