FPF3003.pdf 데이터시트 (총 18 페이지) - 파일 다운로드 FPF3003 데이타시트 다운로드

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July 2012
FPF3003
IntelliMAX™ Full Functional Input Power Path
Management Switch for Dual-Battery Portable System
Features
2.3V to 5.5V Input Voltage Operating Range
Low RON between Battery and Load
Maximum 50mat VIN = 4.2V
Low RON between Charger and Battery
Maximum 125mat VIN = 4.2V
Maximum DC Current for Load Switch: 2.5A
Maximum DC Current for Charge Switch: 1.5A
Slew Rate Controlled to 30µs Nominal Rise Time
Seamless Break-Before-Make Transition
Quiescent Current: 30µA Typical
Thermal Shutdown
Reverse Current Blocking (RCB) between Battery A
and Battery B
RESET Timer Delay: 7s Typical
ESD Protected:
- Human Body Model: >2.5kV
- Charged Device Model: >1.5kV
- IEC 61000-4-2 Air Discharge: >15kV
- IEC 61000-4-2 Contact Discharge: >8kV
1.6mm X 1.6mm, 16-Bump, 0.4mm Pitch, WLCSP
Applications
Dual-Battery Cell phone
Dual-Battery Portable Equipment
Description
The FPF3003 is a single-chip solution for dual-battery
power-path switching, including integrated P-channel
switches and analog control features. The input voltage
range operates from 2.3V to 5.5V. The device selects
one of two batteries to provide power to the system,
enabling one battery to be charged by the external
battery charger.
The FPF3003 has battery voltage monitoring to
determine if the battery is under voltage. Special driver
and digital circuitry allows the device to switch quickly
between battery A and battery B, which allows hot
swapping of battery packs. Maximum current from
battery to load per channel is limited to a constant 2.5A
and internal thermal shutdown circuits protect the part
during fault conditions.
The FPF3003 is available in a 1.6mm x 1.6mm,
16-bump, Wafer-Level Chip-Scale Package (WLCSP).
Ordering Information
Part Number Top Mark
(Charger-Battery)
Max. RON at 4.2VIN
FPF3003UCX
QW
125m
(Battery-Load)
Max. RON at 4.2VIN
50m
Typical
tR
Package
30µs
16-Bump, 0.4mm Pitch,
1.6mm x 1.6mm WLCSP
© 2011 Fairchild Semiconductor Corporation
FPF3003 • Rev. 1.0.0
www.fairchildsemi.com

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Typical Application Diagram
Functional Block Diagram
Figure 1. Typical Application
Figure 2. Functional Block Diagram
© 2011 Fairchild Semiconductor Corporation
FPF3003 • Rev. 1.0.0
2
www.fairchildsemi.com

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Pin Configuration
Figure 3. Pin Assignments (Top View)
Figure 4. Pin Assignments (Bottom View)
Pin Description
Pin #
A1
A2
A3, A4
B1
B2
B3,B4
C1
C2
C3,C4
D1
D2
D3
D4
Name
LOBAT
CHGIN
BATA
STAT
BATBID
VOUT
ADPIN
BATAID
BATB
GND
RESETB
BATSEL
CHGSEL
Description
Low Battery A Voltage Input. Connect to the resistive divider to set the trip level for chip-on
moment. If LOBAT is less than 0.8V, VOUT is connected to BATB.
Charging Input. Charging path input.
Supply Input. Battery A voltage input.
Battery Selector Status. Open-drain output. HIGH (Hi-Z) means battery A connects to
VOUT. LOW means battery B connects to VOUT.
Battery B Indicator. Connect this pin with the ID pin at the battery pack of BATB. HIGH
means battery B absent; LOW means battery B present.
Switch Output. Connect to system load.
Adapter Input. 5V input for battery charger.
Battery A Indicator. Connect this pin with the ID pin at the battery pack of BATA. HIGH
means battery A absent; LOW means battery A present.
Supply Input. Battery B voltage input.
Ground
Reset Input. Active LOW. Both system path switches are disconnected from system load.
Battery Selection Input. HIGH means to switch battery B to VOUT; LOW means to switch
battery A to VOUT.
Charge Selection Input. HIGH means to charge battery B: LOW means to charge battery A.
© 2011 Fairchild Semiconductor Corporation
FPF3003 • Rev. 1.0.0
3
www.fairchildsemi.com

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Absolute Maximum Ratings
Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
VIN All Pins To GND
Maximum Continuous Switch Current to Load
ISW Maximum Continuous Switch Current to Charger
PD
TSTG
ΘJA
Power Dissipation at TA = 25°C
Operating and Storage Junction Temperature
Thermal Resistance, Junction to Ambient
(1in. Square Pad of 2oz. Copper)
Human Body Model, JESD22-A114
ESD
Charged Device Model, JESD22-C101
Electrostatic Discharge
Capability
Air Discharge (BATA, BATB, ADPIN to
GND), IEC61000-4-2 System Level
Contact Discharge (BATA, BATB, ADPIN
to GND), IEC61000-4-2 System Level
Note:
1. Measured using 2S2P JEDEC std. PCB.
Min.
-0.3
-65
2.5
1.5
15.0
8.0
Max.
6.0
2.5
1.5
1.7
150
72(1)
Unit
V
A
A
W
°C
°C/W
kV
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
VIN
TA
Parameters
ADPIN
BATA, BATB
Ambient Operating Temperature
Min.
4.6
2.3
-40
Max.
5.5
5.5
85
Unit
V
V
°C
© 2011 Fairchild Semiconductor Corporation
FPF3003 • Rev. 1.0.0
4
www.fairchildsemi.com

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Electrical Characteristics
ADPIN=4.6 to 5.5V, VBATA=VBATB=2.3 to 5.5V, TA=-40 to 85°C unless otherwise noted. Typical values are at
ADPIN=5V, CHGIN=VBATA=VBATB=4.2V, RESETB=HIGH, and TA=25°C.
Symbol
Parameters
Condition
Static Characteristics
VADPIN
Adapter Input
Voltage
VADPIN_TH ADPIN Threshold
ADPIN Rising
ADPIN Falling
VBATA,
VBATB
IQ
RON
VIH
VIL
VSTAT_LO
Battery Input Voltage
Quiescent Current
On Resistance to
Load Switch, BATA
or BATB to VOUT
On Resistance to
Charger Switch,
CHGIN to BATA
On Resistance to
Charger Switch,
CHGIN to BATB
Input Logic HIGH
Voltage
Input Logic LOW
Voltage
STAT Logic LOW
Voltage
IOUT=0mA
VBATA=VBATB=5.5V, IOUT=300mA,TA=25°C(2)
VBATA=VBATB=4.2V, IOUT=300mA, TA=25°C
VBATA=VBATB=3.7V, IOUT=300mA,TA=25°C
VBATA=VBATB=2.3V, IOUT=300mA, TA=25°C(2)
VBATA=VBATB=5.5V, ICHG=200mA, TA=25°C(2)
VBATA=VBATB=4.2V, ICHG=200mA, TA=25°C
VBATA=VBATB=3.7V, ICHG=200mA, TA=25°C
VBATA=VBATB=2.3V, ICHG=200mA, TA=25°C(2)
VBATA=VBATB=5.5V, ICHG=200mA, TA=25°C(2)
VBATA=VBATB=4.2V, ICHG=200mA, TA=25°C
VBATA=VBATB=3.7V, ICHG=200mA, TA=25°C
VBATA=VBATB=2.3V, ICHG=200mA, TA=25°C(2)
VBATA=VBATB=2.3V – 5.5V, CHGSEL,
BATSEL
VBATA=VBATB=2.3V – 5.5V, RESETB
VBATA=VBATB=2.3V – 5.5V, BATAID, BATBID
VBATA=VBATB=2.3V – 5.5V, CHGSEL,
BATSEL
VBATA=VBATB=2.3V – 5.5V, RESETB
VBATA=VBATB=2.3V – 5.5V, BATAID, BATBID
ISINK=1mA
VLOBAT
tLOBAT
LOBAT Threshold
LOBAT De-Glitch
Time
VBATA=VBATB=2.3V – 5.5V
VBATA=VBATB=2.3V – 5.5V
Shutdown Threshold
TSD Thermal Shutdown Return from Shutdown
Hysteresis
Output Voltage
VDROOP_OUT Droop while Battery
Switching
VBATA=4.2V, VBATB=4.2V, Switching from
VBATA VBATB, RL=100, COUT=10μF
Min. Typ. Max.
4.6 5.5
4.5
4.2
2.3 5.5
30
34
38 50
43 55
62
66
73 90
80 95
101
92
99 125
105 130
128
0.90
1.15
1.70
0.6
0.8
0.9
0.3
0.8
1.3
150
140
10
100
Unit
V
V
V
μA
m
V
V
V
V
ms
°C
mV
Continued on the following page…
© 2011 Fairchild Semiconductor Corporation
FPF3003 • Rev. 1.0.0
5
www.fairchildsemi.com