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FCP190N60E / FCPF190N60E
N-Channel SuperFET® II Easy-Drive MOSFET
600 V, 20.6 A, 190 mΩ
December 2014
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 160 mΩ
• Ultra Low Gate Charge (Typ. Qg = 63 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 178 pF)
• 100% Avalanche Tested
• An Integrated Gate Resistor
• RoHS Compliant
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET easy-drive series offers slightly slower
rise and fall times compared to the SuperFET II MOSFET
series. Noted by the "E" part number suffix, this family helps
manage EMI issues and allows for easier design implementa-
tion. For faster switching in applications where switching losses
must be at an absolute minimum, please consider the Super-
FET II MOSFET series.
D
GDS
TO-220
GDS TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
S
FCP190N60E FCPF190N60E
600
±20
±30
20.6 20.6*
13.1 13.1*
61.8 61.8*
400
4.0
2.1
100
20
208 39
1.67 0.31
-55 to +150
300
Unit
V
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP190N60E
0.6
62.5
FCPF190N60E
3.2
62.5
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FCP190N60E / FCPF190N60E Rev. C11
1
www.fairchildsemi.com

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Package Marking and Ordering Information
Part Number
FCP190N60E
FCPF190N60E
Top Mark
FCP190N60E
FCPF190N60E
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
BVDS
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain to Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS = 0 V, ID = 10 mA, TJ = 25°C
VGS = 0 V, ID = 10 mA, TJ = 150°C
ID = 10 mA, Referenced to 25oC
VGS = 0 V, ID = 20 A
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 10 A
VDS = 20 V, ID = 10 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 380 V, ID = 10 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Min.
600
650
-
-
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 10 A,
VGS = 10 V, RG = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 10 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 10 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. IAS = 4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 10 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
-
-
-
-
-
-
-
Typ.
-
-
0.67
700
-
2.8
-
-
0.16
20
2385
1795
110
42
178
63
10
24
5
23
14
101
15
-
-
-
308
4.8
Max.
-
-
-
-
1
-
±100
3.5
0.19
-
3175
2396
165
-
-
82
-
-
-
56
38
212
40
20.2
60.6
1.2
-
-
Unit
V
V/oC
V
μA
nA
V
Ω
S
pF
pF
pF
pF
pF
nC
nC
nC
Ω
ns
ns
ns
ns
A
A
V
ns
μC
©2011 Fairchild Semiconductor Corporation
FCP190N60E / FCPF190N60E Rev. C11
2
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
50
VGS = 15.0V
10.0V
8.0V
7.0V
10
6.0V
5.5V
5.0V
4.5V
1
0.3
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
VDS, Drain to Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.4
Figure 2. Transfer Characteristics
100
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
150oC
10 25oC
-55oC
1
2345678
VGS, Gate to Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
0.3
VGS = 10V
0.2
VGS = 20V
0.1
0
*Note: TC = 25oC
10 20 30 40 50 60
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
Ciss
1000
100 Coss
*Note:
10 1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
1
Coss = Cds + Cgd
Crss = Cgd
0.5
0.1 1
10
100
VDS, Drain to Source Voltage [V]
600
©2011 Fairchild Semiconductor Corporation
FCP190N60E / FCPF190N60E Rev. C11
150oC
25oC
10
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8 VDS = 300V
VDS = 480V
6
4
2
0 *Note: ID = 10A
0 15 30 45 60 75
Qg, Total Gate Charge [nC]
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-100
*Notes:
1. VGS = 0V
2. ID = 10mA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
for FCP190N60E
100
10μs
100μs
10 1ms
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
0.1
0.01
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
1 10 100
VDS, Drain to Source Voltage [V]
1000
Figure 11. Maximum Drain Current
vs. Case Temperature
25
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. VGS = 10V
2. ID = 10A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Safe Operating Area
for FCPF190N60E
100
10μs
10 100μs
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
0.1
0.01
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
1 10 100
VDS, Drain to Source Voltage [V]
1000
Figure 12. Eoss vs. Drain to Source Voltage
10
20 8
15 6
10 4
52
0
25 50 75 100 125 150
TC, Case Temperature [oC]
©2011 Fairchild Semiconductor Corporation
FCP190N60E / FCPF190N60E Rev. C11
4
0
0 100 200 300 400 500 600
V Drain to Source Voltage [V]
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Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve for FCP190N60E
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 0.6oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rt1e, cRteacntganuglaurlaPruPlusleseDDuuraratitoionn[[sseecc]]
10-1
1
Figure 14. Transient Thermal Response Curve for FCPF190N60E
5
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 3.2oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
1
tR1,eRcteacntagnuglualraPr PuulslseeDDuurraattiioonn [[sseecc]]
10 100
©2011 Fairchild Semiconductor Corporation
FCP190N60E / FCPF190N60E Rev. C11
5
www.fairchildsemi.com