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STB14NM65N, STF14NM65N
STI14NM65N,STP14NM65N,STW14NM65N
N-channel 650 V, 0.33 , 12 A MDmesh™ II Power MOSFET
TO-220, TO-220FP, D2PAK, I2PAK, TO-247
Features
Type
STI14NM65N
STB14NM65N
STF14NM65N
STP14NM65N
STW14NM65N
VDSS
(@TJmax)
710 V
710 V
710 V
710 V
710 V
RDS(on)
max
< 0.38
< 0.38
< 0.38
< 0.38
< 0.38
ID
12 A
12 A
12 A(1)
12 A
12 A
1. Limited only by maximum temperature allowed
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a
new vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
for the most demanding high efficiency
converters.
3
2
1
TO-220
3
2
1
TO-247
3
1
D²PAK
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STI14NM65N
STB14NM65N
STF14NM65N
STP14NM65N
STW14NM65N
Marking
14NM65N
14NM65N
14NM65N
14NM65N
14NM65N
Package
I²PAK
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tube
Tape and reel
Tube
Tube
Tube
October 2008
Rev 2
1/18
www.st.com
18

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Contents
Contents
STB/F/I/P/W14NM65N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
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STB/F/I/P/W14NM65N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220, TO-247
D²PAK, I²PAK
TO-220FP
Unit
VDS Drain-source voltage (VGS=0)
650
VGS Gate-source voltage
± 25
ID Drain current (continuous) at TC = 25 °C
12 12(1)
ID Drain current (continuous) at TC = 100 °C
7.6 7.6 (1)
IDM (2) Drain current (pulsed)
48 48(1)
PTOT Total dissipation at TC = 25 °C
125 30
dv/dt (3) Peak diode recovery voltage slope
15
VISO
Tstg
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;TC=25 °C)
Storage temperature
-- 2500
-55 to 150
TJ Max. operating junction temperature
150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 12 A, di/dt 400 A/µs, VDD =80% V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Value
TO-220 I²PAK D²PAK TO-247 TO-220FP
V
V
A
A
A
W
V/ns
V
°C
°C
Unit
Rthj-case
Thermal resistance
junction-case max
Rthj-amb
Thermal resistance
junction-amb max
Rthj-pcb
Thermal resistance
junction-pcb max
Maximum lead
Tl temperature for soldering
purposes
1
62.5 --
-- -- 30
50
--
300
4.2 °C/W
62.5 °C/W
-- °C/W
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
Single pulse avalanche energy
EAS (starting TJ=25 °C, ID=IAS, VDD= 50 V)
3A
300 mJ
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Electrical characteristics
2 Electrical characteristics
STB/F/I/P/W14NM65N
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V(BR)DSS breakdown voltage
ID = 1 mA, VGS = 0
650
V
dv/dt (1) Drain source voltage slope
VDD = 520 V, ID=12 A,
VGS=10 V
30 V/ns
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, @125 °C
1 µA
100 µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
±100 nA
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA
23 4V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 6 A
0.330 0.380
1. Characteristic value at turn off on inductive load
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS=15 V, ID = 6A
VDS = 50 V, f = 1 MHz,
VGS = 0
10
1300
90
8
S
pF
pF
pF
Coss
(2)
eq
Equivalent output
capacitance
VGS = 0, VDS = 0 to 520 V
150
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 520 V, ID = 12 A,
VGS = 10 V,
(see Figure 19)
45 nC
7 nC
25 nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
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STB/F/I/P/W14NM65N
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD =325 V, ID = 6 A
RG = 4.7 VGS = 10 V
(see Figure 18)
Min Typ Max Unit
11 ns
13 ns
55 ns
20 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 12 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs
VDD = 100 V, TJ = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
12
48
1.3
390
5
25
530
7
25
A
A
V
ns
µC
A
ns
µC
A
5/18