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FQAF11N90C
N-Channel QFET® MOSFET
900 V, 7.0 A, 1.1
December 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
7.0 A, 900 V, RDS(on) = 1.1 (Max.) @ VGS = 10 V,
ID = 3.5 A
• Low Gate Charge (Typ. 60 nC)
• Low Crss (Typ. 23 pF)
• 100% Avalanche Tested
D
G
D
S
TO-3PF
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
S
FQAF11N90C
900
7.0
4.4
28.0
± 30
960
7.0
12
4.0
120
0.96
-55 to +150
300
Thermal Characteristics

+θ 
+θ

Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQAF11N90C
1.04
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C

6?
6?
©2003 Fairchild Semiconductor Corporation
FQAF11N90C Rev. C1
1
www.fairchildsemi.com

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Package Marking and Ordering Information
Part Number
FQAF11N90C
Top Mark
FQAF11N90C
Package
TO-3PF
Packing Method Reel Size
Tube
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
900
--
--
--
--
--
--
1.0
--
--
--
--
--
--
10
100
100
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS =10 V, ID =3.5 A
VDS = 50 V, ID = 3.5 A
3.0 --
-- 0.91
--
5.0
1.1
--
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2530 3290
-- 215 280
-- 23 30
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 450 V, ID = 11.0 A,
RG = 25
-- 60 130
-- 130 270
-- 130 270
(Note 4)
--
85
180
VDS = 720 V, ID = 11.0 A,
-- 60 80
VGS = 10 V
-- 13
--
(Note 4) --
25
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.0 A
trr Reverse Recovery Time
VGS = 0 V, IS = 11.0 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
-- -- 7.0
-- -- 28.0
-- -- 1.4
-- 1000 --
-- 17.0
--
A
A
V
ns
µC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 37 mH, IAS = 7.0 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C .
3. ISD 11.0 A, di/dt 200 A/µs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2003 Fairchild Semiconductor Corporation
FQAF11N90C Rev. C1
2
www.fairchildsemi.com

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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
101 8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.5
2.0
V = 10V
GS
VGS = 20V
1.5
1.0
Note : TJ = 25
0.5
0
5 10 15 20 25 30
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
4500
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
C
iss
Coss
C
rss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1. VDS = 50V
2. 250μ s Pulse Test
468
V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 180V
10
VDS = 450V
8 VDS = 720V
6
4
2
Note : ID = 11A
0
0 10 20 30 40 50 60 70
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
FQAF11N90C Rev. C1
3
www.fairchildsemi.com

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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
102 Operation in This Area
is Limited by R DS(on)
10 µs
101 100 µs
1 ms
10 ms
DC
100
10-1
10-2
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 3.5 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs Case Temperature
100
D = 0.5
1 0 -1
0 .2
0 .1
0 .05
0 .02
0 .01
1 0 -2
sin g le p u lse
N otes :
1 . Z θ JC(t) = 1 .0 4 /W M a x .
2. D uty F a ctor, D = t1/t2
3 . T JM - T C = P D M * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
101
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
FQAF11N90C Rev. C1
4
www.fairchildsemi.com

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Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
V1G0GVSS
tp
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2003 Fairchild Semiconductor Corporation
FQAF11N90C Rev. C1
5
www.fairchildsemi.com