FCH76N60N.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 FCH76N60N 데이타시트 다운로드

No Preview Available !

FCH76N60N
N-Channel SupreMOS® MOSFET
600 V, 76 A, 36 mΩ
November 2013
Features
• RDS(on) = 28 mΩ (Typ.) @ VGS = 10 V, ID = 38 A
• Ultra Low Gate Charge (Typ. Qg = 218 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• Solar Inverter
• AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
D
G
D
S
TO-247
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCH76N60N
600
±30
76
48.1
228
8022
25.3
5.43
100
20
543
4.34
-55 to +150
300
FCH76N60N
0.23
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FCH76N60N Rev. C3
1
www.fairchildsemi.com

No Preview Available !

Package Marking and Ordering Information
Part Number
FCH76N60N
Top Mark
FCH76N60N
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 480 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TC = 125oC
VGS = ±30 V, VDS = 0 V
600
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 38 A
VDS = 20 V, ID = 38 A
2.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
VDS = 100 V, VGS = 0V
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 380 V, VGS = 0 V
VDS = 380 V, ID = 38 A,
VGS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
Typ. Max. Units
-
0.73
-
-
-
-
-
10
100
±100
V
V/oC
μA
nA
- 4.0 V
28 36 mΩ
90 - S
9310
370
3.1
195
914
218
39
66
1.0
12385
495
5
-
-
285
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 38 A,
RG = 25 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 38 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 38 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 25.3 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 76 A, di/dt 200 A/μs, VDD 380 V, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
-
-
-
-
-
-
-
34 78 ns
24 58 ns
235 480 ns
32 74 ns
- 76 A
- 228 A
- 1.2 V
612 - ns
16 - μC
©2011 Fairchild Semiconductor Corporation
FCH76N60N Rev. C3
2
www.fairchildsemi.com

No Preview Available !

Typical Performance Characteristics
Figure 1. On-Region Characteristics
300
VGS = 15V
10V
100
8V
6V
5.5V
5V
4.5V
10
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
2
0.1 1 10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
50
45
40
VGS = 10V
35
VGS = 20V
30
25 *Note: TC = 25oC
0 50 100 150 200 250
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
105
Coss
104 Ciss
103 Crss
102 *Note:
1. VGS = 0V
2. f = 1MHz
101 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
1000.0C1rss
=
Cgd
0.1
1
10 100
VDS, Drain-Source Voltage [V]
600
Figure 2. Transfer Characteristics
500
100
150oC
25oC
10
-55oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
2468
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
400
100
150oC
25oC
10
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.0 0.5 1.0 1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
0 *Note: ID = 38A
0 60 120 180 240
Qg, Total Gate Charge [nC]
©2011 Fairchild Semiconductor Corporation
FCH76N60N Rev. C3
3
www.fairchildsemi.com

No Preview Available !

Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0 1.5
0.9
0.8
-100
*Notes:
1. VGS = 0V
2. ID = 250μA
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
1000
100
10
Operation in This Area
is Limited by RDS(on)
1
10μs
100μs
1ms
10ms
DC
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10 100
VDS, Drain-Source Voltage [V]
1000
1.0
0.5
0.0
-100
*Notes:
1. VGS = 10V
2. ID = 38A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
80
60
40
20
0
25 50 75 100 125 150
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
0.3
0.1 0.5
0.2
0.1
0.01 0.05
0.02
0.01
Single pulse
0.001
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 0.21oC/W Max.
2. Duty Factor, D = t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
tR1,eRcteacntagnuglualraPr uPluslseeDDuurraattiioonn [seecc]]
100
101
©2011 Fairchild Semiconductor Corporation
FCH76N60N Rev. C3
4
www.fairchildsemi.com

No Preview Available !

IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 13. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FCH76N60N Rev. C3
5
www.fairchildsemi.com