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1fOSH~lBA MOS MEMORY PRODUCT
32,768 WORD X 8 BIT CMOS STATIC RAM
SILICON GATE CMOS
PRELIMINARY
TC55257AP-l O/APL-l O/AP-12/APL-12
TC55257A~10/AF~10/A~12/AF~12
[QfSCR I PTI ON I
The TC55257AP is 262,144 bit static random access memory organized as 32,768 words
by 8 bits usIng OIOS technology, and operated trom a single 5V supply. Advanced circuit
techniques provide both high speed and low power features with a maximum operating cur-
rent of 5mA/rnIz and minimum cycle time of 100nsi l20ns.
Hhen CE is a logic<ll high, the device is pLlcecl in lmv pm'ler standby mode i.n T Ih Jrh
standby current is 2~A typically. Tile TC55257AP h<lS two control inputs. Chip enable (CE)
<lllow for device selection and data ret0ntion control, <lnd an output enable input (UE)
provides fast r.1e::iory access. Thus the TC55257AP Is suitable for use in various mi~roproc­
essor application systems where high speed, low power, and battery back up are required.
TC55257AP is offered in both a standard dual-In-line 28 pIn plastic pac'kage (0.6
inch width) and small-out-line plastic flat packn~e.
IFEATURES!
• Low Power Dissipation
27. 5ml~/t'f1!z C·[ax.) Operating
• Access Time
-
• Standby Current
---------.100pA(Hax.): TC55257APL-lO/APL-l2 Access TimeU1A..'{.)
TC55257AP-IO/APL-IO
AF-IO/AFL-I0
lOOns
TC55257 AP-12/APL-12
AF-12/AFL-12
l20ns
/AFL-10/AFL-12 CE Access Time(UAX.)
lOOns
l20ns
lr.1A(Hax.): TC55257AP-lO/AP-12 Output Enable Time
/AF-10/AF-12
(~!AX. )
SOns
60ns
• 5V Single Power Supply
Po~ver Dmm Feature: CE
• Data Retention Supply Voltage:
• Directly TTL Compatible: All Inputs and Outputs
Plastic DIP and Plastic FP Package
2.0'VS.5V
IBLOCK DIAGRAr"I!
1PIN CONNECTION! (TOP VIEH)
A14
.\12
A'7
A6
.<\5
A4,
A3
.'\2
Al
AO
1/01
1/02
1/03
GND
VDD
l:',/'s
A13
A8
A9
Aosll
Ala
cs
VA '3
1/0'7
1/06
1/05
1/04
A5
A6
)..'7
A8
.1\9
All
A12
A13
A14
I/O1o-.---t
r..--------...,."
MEMORY CELL
ARRAY
512X32X16
(262144)
16
--oVDD
~GND
IPI N tIAt'1ES I
AO 'V A14
R/W
OE
CE
1/01 'V 1/08
VDD
GND
Address Inputs
Read/Write Control Input
Output Enable Input
Chip Enable Input
Data Input/Output
Power (+5V)
Ground
CE
8-99 -

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TC55257AP-l 0/APL-10/AP-12/APL-12
TC55257AF-l0/AFL-l0/AF-12/AFL-12
~ERATION r,10DEI
OPERATIO~ ~!OOE
Read
('irite
Output Deselect
Standby
"') H or L
CE OE R/U 1/01 'V 1/08 PO\vER
L LH
DOUT
1000
L L,,;'~
DI~ 1000
L
II
II
lIigh-Z
TOOO
II
':i':
.'.
fligh-Z
IOOS
SYNBOL
ITG!
VOO Pmver Supply Voltage
VIN Input V.oltage
VI/o
Input and Output Voltage
Po Power Dissipation
Tsolder
Tstrg
Soldering Temperature
Storage Temperature
Topr
Operating Temperature
* ....... -3.0V at pulse width SOns
ID.C. RECOMMENDED OPERATING CONDITIONS!
SYHBOL
PARAHETER
VOD Power Supply Voltage
VIR Input High Voltage
VIL Input Low Voltage
VOR Oata Retention Supply Voltage
RATING
-0.3'\,7.0
-0 • 3:', 'V 7. 0
-0.5 'V VOO+O. 5
1.0
260 • 10
-55 'V 150
O'V 70
UNIT
V
V
V
Iv
°c • sec
°c
°c
HIN.
4.5
2.2
-0.3
2.0
TYP. HAX.
5.0 5.5
- VOO+O·3
- 0.8
- 5.5
UNIT
V
V
V
V
- 8-100-

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TC55257A~10/AP~10/AP·12/AP~12
TC55257A~10/AF~10/A~12/AF~12
IT[[ and OPERATING CHARACTERISTICSi (Ta=O ",70°C, VDO=5V±10%)
SYNBOL
PARANETER
TEST CO~OlTION
HIN. TYP. MAX. UNLT
ILL Input Leakage Current VU-J=O "'Voo
TOll Output High Current
VOH =2.4V
10L Output Lm.,r Current
VOL =0.4V
-
-1.0
4.0
- H.O ~lA
- - rnA
- - rnA
ILO Output Leakage Current
10001
Operating Current
(Read Cycle) ;':
10002
IDOSl Standby Current
IDDS2 Standby Current
CE=VlH or R/\':=VIL or OE=VIH
VOUT=O '\" VOO
VOO =5.5V
CE=VIL, R/~~=VIII
Other Input
=V m/V IL
IOUT=OmA
VDO=5.5V
(:[=0.2V,
R/h'=VOD-O.2V
Other Input
=VDD-O.2V/O.2V
IOUT=OmA
tcycle=lu s
tcycle=
~lin. cycle
tcycle=llJ S
tcycle=
~1in. cycle
CE=VIH
CE=VDD-O 2V
VDD=2 .0 '\, 5. 5V
TC55257APL/
AFL
TC55257AP/AF
-
-
-
-
-
-
-
-
- .::1.0 llA
- 10
rnA
- 45
-5
rnA
- 40
- 3 rnA
2 100 ~A
- 1.0 rnA
~ ~ssuming that R/W is Low for Write Cycle, the current consumption is twice as much
as that when R/W is High for Write Cycle
lCAPACITANCEI (Ta=2SoC , f=l'IHz)
SYHBOL
PARAHETER,
CIN
COUT
Input Capacitance
Outpu~ Capacitance
TEST CONDITION
VIN=GND
VOUT=GND
Note: This parameter periodically sampled is not 100% tested.
MAX.
10
10
UNIT
pF
pF
- 8-101 -

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TC55257AP-l O/APL-l 0/AP-12/APL-12
TC55257A~10/AF~10/A~12/AF~12
IA.C. CHARACTERISTICSl (Ta=O'\, 70°C, VDD=5V±10%)
Read Cycle
SytlBOL
PARAHETER
trrc Read Cycle Time
tAcc Address Access Time
tco CE Access Time
tOE
Output Enable to Output
in Valid
-
tCOE
Chip Enable (CE) to Output
in Lm·J-Z
f---- -------.-
-
Output Enable to Output in
tOEE Lo~v-Z
,-------f----
tOD
Chip Enable (CE) to Output
in High-Z
tODO
Output Enable to Output in
High-Z
tOH Output Data Hold Time
TEST CONDITI.ON
VIN=2.4V/0.6V
VIH=2.2V
V1L=0.8V
tr, tf ~ Sns
VOH=2.2V
VOL=0.8V
Output Load:
CL(100pF) and
1 TTL Gate
'n ;502o'/'\P-IO/<\l-'lr 1U 'JC552b7;'P-12/.-\PL-12
AF-1U/Al<L-10
..l.'-1.'./,IFL-12
UNIT
HIN. HAX. HIN. HAX.
100 - 120 -
- 100 - 120
- 100 - 120
- 50 - 60
10 -
5-
10 -
ns
5-
- 50 - 60
- 40 - 50
10 -
10 -
Hrite Cycle
SY~1BOL
PARAHETER
tHC
t~-JP
tCl"]
tAS
ttVR
tODW
tOEW
tDS
tDH
~vrite Cycle Time
Hrite Pulse tvidth
Chip Selection to End of
tvrite
Address Set up Time
tvrite Recovery Time
R/t..] to Output High-Z
R/tv to Output Low-Z
Data Set up Time
Data Hold Time
TEST CONDITION
VIN=2.4V/0.6V
VIH=2.2V
1C5525~<\P-10/APL-IO
AF-IO/AFL-IO
HIN. HAX.
100 -
70 -
'IC55257AP-12/APL-12
•.l..?-12/Ar"L-12 UNIT
MIN. MAX.
120 -
80 -
VIL=0.8V
90 - 100 -
t r , tf ~ 5ns.
0-
0-
10 -
10 - ns
- 50 - 60
10 -
10 -
40 -
-50
0-
0-
Note: Input pulse levels=VIN
Timing Heasurement Reference Levels=VIH, VIL
- 8-102-

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TUlING HAVEFORt·1S
READ CYCLE (l)
,\DDhE:SSES
VIL-
TC55257AP-1 01APL-1 01AP-121APL-12
TC55257A~10/AF~10/A~12/AF~12
L'UUT
VCri - ------r---~~X~I
t(JDO
Cln"PUT DATA VALID
t'JRITE CYCLE 1 (4) (R/W Controlled Write)
VIH -
ADDRESSES
VIL -
two
rvw VIH -
VIL-
t,,vp
t;VR
CE
DOUT
DIN
VIH-
VIL-
VIH-
VIL-
tcw
toDW
tOEW
(3)
tDS
DATA IN STABLE
- 8-103-