TOSHIBA MOS MEMORY PRODUCT
16,384 WORD X 4 BIT CMOS STATIC RAM
SILICON GATE CMOS
The TC55416P is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits
using CMOS technology, and operated from a single 5-volt supply. Toshiba's high performance device technology
provides both high speed and low power features with a maximum access time of 35ns/45ns and maximum
operating current of 80mA/60mA at minimum cycle time.
The TC55416P also features an automatic stand-by mode. When deselected by Chip Enable (CE), the operating
current is reduced to lOrnA.
The TC55416P is suitable for use in cache memory and high speed storage, where high speed/high density are
The TC55416P is molded in a 22 pin standard plastic package with 0.3 inch width for high density assembly.
The TC55416P is fabricated with ion implanted CMOS silicon gate MOS technology for high performance and
Fast access time
TC554l6P-35 35ns (Max.)
TC554l6P-45 45nS (Max.)
Low power dissipation Operation TC554l6P-35 80mA (Max.)
TC554l6P-45 60mA (Max.)
. 5V single power supply
. Fully static operation
Directly TTL compatible All Input and Output
22 pins standard plastic package, 300 mil width.
Chip Enable Input
Write Enable Input
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