HP8K24.pdf 데이터시트 (총 19 페이지) - 파일 다운로드 HP8K24 데이타시트 다운로드

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HP8K24
  30V Nch+Nch Middle Power MOSFET
Symbol
VDSS
RDS(on)(Max.)
ID
PD
Tr1:Nch Tr2:Nch
30V 30V
8.8mΩ 3.0mΩ
±27A ±80A
22W 31W
lFeatures
1) Low on - resistance.
2) Pb-free lead plating ; RoHS compliant.
3) Halogen Free.
lOutline
HSOP8
 
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
330
Switching
DC/DC Converter
Type Tape width (mm)
Basic ordering unit (pcs)
12
2500
Taping code
TB
Marking
HP8K24
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Tr1:Nch Tr2:Nch
Unit
Drain - Source voltage
VDSS
30 30
V
Continuous drain current
ID*1
±27 ±80
A
ID
±15 ±26
A
Pulsed drain current
IDP*2
±60 ±80
A
Gate - Source voltage
VGSS
±20 ±20
V
Avalanche current, single pulse
IAS*3
15 26
A
Avalanche energy, single pulse
EAS*3
16.5 51.2
mJ
Power dissipation
element
total
PD*1
22 31
W
PD*4 3.0 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
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HP8K24
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Tr1:Nch
Tr2:Nch
total
                Datasheet
                    
Symbol
RthJC*1
RthJC*1
RthJA*4
Values
Min. Typ. Max.
- - 5.6
- - 4.0
- - 41.7
Unit
/W
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Type
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Tr1
V(BR)DSS
Tr2
 ΔV(BR)DSS  Tr1
   ΔTj     Tr2
VGS = 0V, ID = 1mA
VGS = 0V, ID = 1mA
ID = 1mA, referenced to 25
ID = 1mA, referenced to 25
Zero gate voltage
drain current
IDSS Tr1 VDS = 24V, VGS = 0V
Tr2 VDS = 24V, VGS = 0V
Gate - Source
leakage current
IGSS
Tr1 VDS = 0V, VGS = ±20V
Tr2 VDS = 0V, VGS = ±20V
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
VGS(th)
Tr1
Tr2
 ΔVGS(th)   Tr1
   ΔTj     Tr2
VDS = VGS, ID = 1mA
VDS = VGS, ID = 1mA
ID = 1mA, referenced to 25
ID = 1mA, referenced to 25
Static drain - source
on - state resistance
VGS = 10V, ID = 15A
Tr1
RDS(on)*5
VGS = 4.5V, ID = 15A
VGS = 10V, ID = 26A
Tr2
VGS = 4.5V, ID = 26A
Gate resistance
Tr1
RG f=1MHz, open drain
Tr2
Forward Transfer
Admittance
|Yfs|*5 Tr1 VDS = 5V, ID = 15A
Tr2 VDS = 5V, ID = 26A
*1Tc=25, Limited only by maximum temperature allowed.
*2 Pw 10μs, Duty cycle 1%
*3 L 0.1mH, VDD = 15V, RG = 25Ω, Starting Tj = 25Fig.3-1,3-2
*4 Mounted on a Cu board (40×40×0.8mm)
*5 Pulsed
Values
Unit
Min. Typ. Max.
30 - -
V
30 - -
- 28 -
mV/
- 28 -
- -1
μA
- -1
- - ±100
nA
- - ±100
1.3 - 2.5
V
1.3 - 2.5
- -3.87 -
mV/
- -3.87 -
- 6.7 8.8
- 9.1 13.3
- 2.3 3.0
- 3.2 4.2
1.15 2.3 4.6
0.6 1.1 2.2
Ω
10 - -
S
27 - -
                                                                                               
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HP8K24
          
lElectrical characteristics (Ta = 25°C)
<Tr1>
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on)*5
tr*5
td(off)*5
tf*5
VGS = 0V
VDS = 15V
f = 1MHz
VDD 15V, VGS = 10V
ID = 7.5A
RL = 2.0Ω
RG = 10Ω
<Tr2>
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on)*5
tr*5
td(off)*5
tf*5
VGS = 0V
VDS = 15V
f = 1MHz
VDD 15V, VGS = 10V
ID = 13A
RL = 1.15Ω
RG = 10Ω
                Datasheet
Values
Unit
Min. Typ. Max.
- 590 -
- 160 - pF
- 44 -
- 9.6 -
- 4.5 -
ns
- 25.5 -
- 3.4 -
Values
Min. Typ. Max.
- 2140 -
- 510 -
- 155 -
- 20.0 -
- 12.0 -
- 59.0 -
- 19.0 -
Unit
pF
ns
                                                                                               
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HP8K24
          
                Datasheet
lGate charge characteristics (Ta = 25°C)
<Tr1>
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
<Tr2>
Qg*5
Qgs*5
Qgd*5
VDD 15V
ID = 15A
VGS = 10V
VGS = 4.5V
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg*5
Qgs*5
Qgd*5
VDD 15V
ID = 26A
VGS = 10V
VGS = 4.5V
Values
Min. Typ. Max.
- 10.0 -
- 4.8 -
- 2.3 -
- 1.1 -
Unit
nC
Values
Min. Typ. Max.
- 36.0 -
- 17.2 -
- 7.5 -
- 4.7 -
Unit
nC
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
<Tr1>
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Continuous forward current
Pulse forward current
Forward voltage
Reverse recovery time
Reverse recovery charge
IS
ISP*2
VSD*5
trr*5
Qrr*5
Ta = 25
VGS = 0V, IS = 2.5A
IS = 15A, VGS = 0V
di/dt = 100A/μs
- - 2.5
A
- - 60
- - 1.2 V
- 21.4 - ns
- 11.8 - nC
<Tr2>
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Continuous forward current
Pulse forward current
IS
ISP*2
Ta = 25
- - 2.5
A
- - 80
Forward voltage
VSD*5 VGS = 0V, IS = 2.5A
- - 1.2 V
Reverse recovery time
Reverse recovery charge
trr*5 IS = 26A, VGS = 0V
Qrr*5 di/dt = 100A/μs
- 32.0 - ns
- 26.0 - nC
                                                   
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HP8K24
      
lElectrical characteristic curves <Tr1>
Fig.1 Power Dissipation Derating Curve
        
Datasheet
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal  
       Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power     
    dissipation
                                                                                          
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5/16
20160627 - Rev.001