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NIKO-SEM
N-Channel Enhancement Mode P0550ETF:TO-220F
Field Effect Transistor
P0550ETFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
1.55Ω
ID
5A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
500
±30
5
3.2
20
2.5
31.2
32
12
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
MAXIMUM
3.9
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
500
V
23
4
IGSS VDS = 0V, VGS = ±30V
±100 nA
VDS = 500V, VGS = 0V , TC = 25 °C
IDSS
VDS = 400V, VGS = 0V , TC = 100 °C
1
A
10
REV 1.0
E-51-3
1

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NIKO-SEM
N-Channel Enhancement Mode P0550ETF:TO-220F
Field Effect Transistor
P0550ETFS:TO-220FS
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 2.5A
VDS = 10V, ID = 2.5A
DYNAMIC
1.15 1.55
6.8
Input Capacitance
Ciss
565
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
71
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 400V, ID =5A, VGS = 10V
VDD = 300V, ID =5A, RG= 25Ω
12
18
3
7.2
15
24
74
37
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 5A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 380 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
226
1.7
5
1
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.0
E-51-3
2

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NIKO-SEM
N-Channel Enhancement Mode P0550ETF:TO-220F
Field Effect Transistor
P0550ETFS:TO-220FS
Halogen-Free & Lead-Free
Output Characteristics
8
VGS=10V
VGS=9V
VGS=8V
VGS=7V
6 VGS=6V
VGS=5V
4
2
VGS=4.5V
Transfer Characteristics
5
4
3
2
125
25
1
0
0 2 4 6 8 10
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Gate-To-Source
10
Voltage
8
0
0123456
VGS, Gate-To-Source Voltage(V)
7
On-Resistance VS Drain Current
3
2.4
6 1.8
VGS=10V
4 1.2
2
ID=2.5A
0
2468
VGS, Gate-To-Source Voltage(V)
10
On-Resistance VS Temperature
3.0
2.5
2.0
1.5
1.0
0.5
VGS=10V
ID=2.5A
0.0
-50
-25 0 25 50 75 100 125
TJ , Junction Temperature(˚C)
150
0.6
0
01234
ID , Drain-To-Source Current(A)
5
Capacitance Characteristic
100
10
150
25
1
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VDS, Drain-To-Source Voltage(V)
1.4
REV 1.0
E-51-3
3