P0260ETF.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 P0260ETF 데이타시트 다운로드

No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode P0260ETF:TO-220F
Field Effect Transistor
P0260ETFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
4.3Ω
ID
2A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
2
1.3
8
2
20
29
11
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH ,starting TJ = 25˚C
TYPICAL
MAXIMUM
4.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
600
V
23 4
IGSS VDS = 0V, VGS = ±30V
±100 nA
VDS = 600V, VGS = 0V , TC = 25 °C
IDSS
VDS = 480V, VGS = 0V , TC = 100 °C
1
A
10
REV 1.0
1
E-44-1

No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode P0260ETF:TO-220F
Field Effect Transistor
P0260ETFS:TO-220FS
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 1A
VDS = 15V, ID = 2A
DYNAMIC
3.4
4
Input Capacitance
Ciss
322
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
41
Reverse Transfer Capacitance
Crss
9
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 480V, ID = 2A, VGS = 10V
VGS = 10V , VDD = 300V,
ID = 2A, RG= 25Ω
10.7
1.4
4.8
30
61
59
67
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
Forward Voltage1
IS
VSD IF = 2A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 2A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
295
1.2
4.3
2
1.5
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.0
2
E-44-1

No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode P0260ETF:TO-220F
Field Effect Transistor
P0260ETFS:TO-220FS
Halogen-Free & Lead-Free
Output Characteristics
2
VGS=10V
VGS=9V
VGS=8V
1.6
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
1.2
Transfer Characteristics
2
1.6
1.2
0.8
0.4
0
0246
VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
10
VDS=480V
ID=2A
8
8
6
4
2
0
0 2 4 6 8 10 12
Qg , Total Gate Charge(nC)
On-Resistance VS Gate-To-Source
4
0.8
25
0.4
125
0
0246
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
600
8
500
400
CISS
300
200
100
0
0
5 10 15 20
VDS, Drain-To-Source Voltage(V)
COSS
CRSS
25
On-Resistance VS Drain Current
4
3.8 3.8
3.6 3.6
ID=1A
VGS=10V
3.4 3.4
3.2 3.2
3
2468
VGS, Gate-To-Source Voltage(V)
REV 1.0
10
3
3
0 0.2 0.4 0.6 0.8
ID , Drain-To-Source Current(A)
1
E-44-1