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NIKO-SEM
N-Channel Enhancement Mode
P0470ETF:TO-220F
P0470ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
2.8Ω
ID
4A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
700
±30
4
2.6
16
2
20
54
22
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
MAXIMUM
2.3
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
REV 1.0
1
LIMITS
UNIT
MIN TYP MAX
700
V
23
4
±100 nA
F-48-3

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NIKO-SEM
N-Channel Enhancement Mode
P0470ETF:TO-220F
P0470ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
Gate Voltage Drain Current
VDS = 700V, VGS = 0V , TC = 25 °C
IDSS
VDS = 560V, VGS = 0V , TC = 100 °C
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 2A
VDS = 10V, ID = 2A
DYNAMIC
2.2
7.7
Input Capacitance
Ciss
661
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
63
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 560V, ID =4A, VGS = 10V
VDD = 350V, ID =4A, RG= 6Ω
8
14
2.9
3.2
37
13.5
17
12.3
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =4A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF =4A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 380 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
354
2.4
1
10
2.8
4
1
A
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.0
2
F-48-3

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NIKO-SEM
N-Channel Enhancement Mode
P0470ETF:TO-220F
P0470ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
Output Characteristics
4
VGS=10V
VGS=9V
VGS=8V
VGS=7V
3
VGS=6V
VGS=5V
VGS=4.5V
2
VGS=4V
1
0
0 3 6 9 12
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Gate-To-Source
4.00Voltage
3.50
3.00
2.50
2.00
1.50
ID=4A
1.00
2
4 6 8 10
VGS, Gate-To-Source Voltage(V)
Transfer Characteristics
4
3
2
25
1
125
-20
0
02468
VGS, Gate-To-Source Voltage(V)
On-Resistance VS Drain Current
5
4
3
2
VGS=10V
1
0
012345
ID , Drain-To-Source Current(A)
On-Resistance VS Temperature
2.9
2.4
1.9
1.4
0.9
VGS=10V
ID=4A
0.4
-50
-25 0
25 50 75 100 125
TJ , Junction Temperature(˚C)
150
Capacitance Characteristic
1200
1000
800
CISS
600
400
200
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
REV 1.0
3
F-48-3