P0660ETF.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 P0660ETF 데이타시트 다운로드

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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P0660ETF:TO-220F
P0660ETFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.3Ω
ID
6A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
6
3.8
20
3.5
61.2
32
13
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
MAXIMUM
3.8
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
600
V
23 4
IGSS VDS = 0V, VGS = ±30V
±100 nA
VDS = 600V, VGS = 0V , TC = 25 °C
IDSS
VDS = 480V, VGS = 0V , TC = 100 °C
1
A
10
REV 1.0
1
F-12-4

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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P0660ETF:TO-220F
P0660ETFS:TO-220FS
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 3A
VDS = 10V, ID = 3A
DYNAMIC
1
10
Input Capacitance
Ciss
953
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
105
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 480V, ID =6A, VGS = 10V
VDD = 300V, ID =6A, RG= 25Ω
18
34
4.4
14
40
33
130
45
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
Forward Voltage1
IS
VSD IF =6A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF =6A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 380 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
362
3
1.3
6
1
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.0
2
F-12-4

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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P0660ETF:TO-220F
P0660ETFS:TO-220FS
Halogen-Free & Lead-Free
Output Characteristics
6
VGS=10V
VGS=9V
5
VGS=8V
VGS=7V
VGS=6V
VGS=5V
4
VGS=4.5V
3
2
1
0
0246
VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
10
VDS=480V
8 ID=6A
8
6
4
2
0
0 8 16 24 32 40
Qg , Total Gate Charge(nC)
On-Resistance VS Gate-To-Source
2
Transfer Characteristics
6
5
4
3
2
1
0
0
1800
1600
1400
1200
1000
800
600
400
200
0
0
125
-20
25
12345
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
CISS
COSS
CRSS
5 10 15 20
VDS, Drain-To-Source Voltage(V)
6
25
On-Resistance VS Drain Current
2
1.6 1.6
1.2 1.2
ID=3A
VGS=10V
0.8 0.8
0.4 0.4
0
2468
VGS, Gate-To-Source Voltage(V)
REV 1.0
0
10 0
3
12345
ID , Drain-To-Source Current(A)
6
F-12-4