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BUZ 102S
SIPMOSPower Transistor
Features
N channel
Enhancement mode
Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
dv/dt rated
175 ˚C operating temperature
VDS
RDS(on)
ID
55
0.018
52
V
A
Type
BUZ102S
BUZ102S E3045A
BUZ102S E3045
Package Ordering Code
P-TO220-3-1 Q67040-S4011-A2
P-TO263-3-2 Q67040-S4011-A6
P-TO263-3-2 Q67040-S4011-A5
Packaging
Tube
Tape and Reel
Tube
Pin 1 Pin 2 Pin 3
GDS
Maximum Ratings, at Tj = 25 ˚C unless unless specified
Parameter
Symbol
Continuous drain current
TC = 25 ˚C
TC = 100 ˚C
ID
Pulsed drain current
TC = 25 ˚C
Avalanche energy, single pulse
ID = 52 A, VDD = 25 V, RGS = 25
IDpulse
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = 52 A, VDS = 40 V, di/dt = 200 A/µs,
Tjmax = 175 ˚C
Gate source voltage
Power dissipation
TC = 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
52
37
208
245
12
6
Unit
A
mJ
kV/µs
±20
120
-55... +175
55/175/56
V
W
˚C
Data Book
1
05.99

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BUZ 102S
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area1)
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- 1.25 K/W
- 62
- - 62
- - 40
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C
Gate threshold voltage, VGS = VDS
ID = 90 µA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 ˚C
VDS = 50 V, VGS = 0 V, Tj = 150 ˚C
V(BR)DSS 55
-
-V
VGS(th)
2.1
3
4
IDSS
µA
- 0.1 1
- - 100
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 37 A
IGSS
RDS(on)
- 10 100 nA
- 0.0155 0.018
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Book
2
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BUZ 102S
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
VDS2*ID*RDS(on)max , ID = 37 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 52 A,
RG = 6.8
Rise time
VDD = 30 V, VGS = 10 V, ID = 52 A,
RG = 6.8
gfs
Ciss
Coss
Crss
td(on)
10 28
-S
- 1220 1525 pF
- 410 515
- 210 265
- 12 18 ns
tr - 22 33
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 52 A,
RG = 6.8
Fall time
VDD = 30 V, VGS = 10 V, ID = 52 A,
RG = 6.8
td(off)
- 30 45
tf - 25 40
Data Book
3
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BUZ 102S
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
VDD = 40 V, ID = 52 A
Gate to drain charge
VDD = 40 V, ID = 52 A
Gate charge total
VDD = 40 V, ID = 52 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 52 A
Qgs -
Qgd -
Qg -
V(plateau)
-
8 12 nC
23 34.5
45 70
5.9 - V
Reverse Diode
Inverse diode continuous forward current
TC = 25 ˚C
IS
- - 52 A
Inverse diode direct current,pulsed
TC = 25 ˚C
ISM - - 208
Inverse diode forward voltage
VGS = 0 V, IF = 104 A
VSD - 1.2 1.7 V
Reverse recovery time
VR = 30 V, IF=IS , diF/dt = 100 A/µs
trr - 70 105 ns
Reverse recovery charge
VR = 30 V, IF=lS , diF/dt = 100 A/µs
Qrr - 0.15 0.25 µC
Data Book
4
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BUZ 102S
Power Dissipation
Ptot = f (TC)
BUZ102S
2.8
W
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160 ˚C 190
TC
Safe operating area
ID = f (VDS)
parameter : D = 0 , TC = 25 ˚C
10 3 BUZ102S
A
tp = 19.0µs
Drain current
ID = f (TC)
parameter: VGS 10 V
BUZ102S
60
A
50
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160 ˚C 190
TC
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 BUZ102S
K/W
10 0
10 2
10 1
10
0
10
-1
10 0
100 µs
1 ms
10 ms
DC
10 1 V 10 2
VDS
10 -1
10 -2
10 -3
10 -4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-5
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
Data Book
5
05.99