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MLX92215-AAA
3-Wire Hall Effect Latch
Features and Benefits
Wide operating voltage range : from 2.7V to 24V
Chopper-stabilized amplifier stage
Built-in negative temperature coefficient
Reverse Supply Voltage Protection
High ESD rating / Excellent EMC performance
Application Examples
Consumer and Industrial
Solid-state switch
E-Bike
Motorcycles
3-phase BLDC motor commutation
Part No.
MLX92215LUA-AAA-000-BU
MLX92215LSE-AAA-000-RE
MLX92215LSE-ACA-000-RE
Ordering Information
Temperature Code
Package Code
L (-40°C to 150°C)
UA (TO92-3L)
L (-40°C to 150°C)
SE (TSOT-23)
L (-40°C to 150°C)
SE (TSOT-23)
Comment
BOP/BRP= ± 3mT, TC = -1100 ppm/°C
BOP/BRP= ± 3mT, TC = -1100 ppm/°C
Inverted output BOP/BRP= ± 3mT, TC =
-2000 ppm/°C
1 Functional Diagram
VDD
Voltage Regulator
with Reverse Polarity
Protection
Temperature
Compensation
Bop/Brp
reference
Switched
Hall
Plate
CDS
Amplifier
Control
Open-Drain
Output
OUT
GND
2 General Description
The Melexis MLX92215 is the second generation Hall-
effect latch designed in mixed signal CMOS technology.
The device integrates a voltage regulator, Hall sensor with
advanced offset cancellation system and an open-drain
output driver, all in a single package. Based on the
existing platform, the magnetic core is using an improved
offset cancellation system allowing faster and more
accurate processing while being temperature insensitive
and stress independent. In addition is implemented a
negative temperature coefficient to compensate the
natural behaviour of magnets becoming weaker with rise
in temperature.
The included voltage regulator operates from 2.7 to 24V,
hence covering a wide range of applications. With the
built-in reverse voltage protection, a serial resistor or
diode on the supply line is not required so that even
remote sensors can be specified for low voltage operation
down to 2.7V while being reverse voltage tolerant.
With latching magnetic characteristics, the output is
turned low or high respectively with a sufficiently strong
South or North pole facing the package top side. When
removing the magnetic field, the device keeps its previous
state.
390109221501
Rev. 001
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Datasheet
NOV/14

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MLX92215-AAA
3-Wire Hall Effect Latch
Table of Contents
1 Functional Diagram .................................................................................................................................................. 1
2 General Description ................................................................................................................................................. 1
Table of Contents........................................................................................................................................................ 2
3 Glossary of Terms..................................................................................................................................................... 3
4 Absolute Maximum Ratings ..................................................................................................................................... 3
5 General Electrical Specifications............................................................................................................................... 4
6 Magnetic Specifications ........................................................................................................................................... 5
6.1 MLX92215LSE-AAA-000....................................................................................................................................... 5
6.2 MLX92215LUA-AAA-000...................................................................................................................................... 5
7 Output Behaviour versus Magnetic Pole .................................................................................................................. 5
7.1 South Pole Active................................................................................................................................................. 5
8 Performance Graphs ................................................................................................................................................ 7
8.1 Magnetic parameters vs. TA................................................................................................................................. 7
8.2 Magnetic parameters vs. VDD .............................................................................................................................. 7
8.3 VDSon vs. TA ........................................................................................................................................................... 7
8.4 VDSon vs. VDD ......................................................................................................................................................... 7
8.5 IDD vs. TA ............................................................................................................................................................... 7
8.6 IDD vs. VDD ............................................................................................................................................................. 7
8.7 IOFF vs. TA .............................................................................................................................................................. 8
8.8 IOFF vs. VOUT........................................................................................................................................................... 8
8.9 SE Power Derating vs. TA ..................................................................................................................................... 8
8.10 UA Power Derating vs. TA .................................................................................................................................. 8
9 Application Information ........................................................................................................................................... 9
9.1 Typical Three-Wire Application Circuit................................................................................................................ 9
10 Standard information regarding manufacturability of Melexis products with different soldering processes........ 10
11 ESD Precautions ................................................................................................................................................... 10
12 Packages .............................................................................................................................................................. 11
12.1 SE Package (TSOT-23) ...................................................................................................................................... 11
12.1 UA (TO92 - 3L) ................................................................................................................................................ 12
13 Disclaimer ............................................................................................................................................................ 13
390109221501
Rev. 001
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Datasheet
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MLX92215-AAA
3-Wire Hall Effect Latch
3 Glossary of Terms
MilliTesla (mT), Gauss
RoHS
TSOT
ESD
Units of magnetic flux density: 1mT = 10 Gauss
Restriction of Hazardous Substances
Thin Small Outline Transistor (TSOT package) also referred with the Melexis package
code “SE”
Electro-Static Discharge
4 Absolute Maximum Ratings
Parameter
Supply Voltage (1, 2)
Supply Voltage (Load dump) (1, 3)
Supply Current (1, 2, 4)
Supply Current (1, 3, 4 )
Reverse Supply Voltage (1, 2)
Reverse Supply Voltage (Load
dump)(1, 3)
Reverse Supply Current (1, 2, 5)
Reverse Supply Current (1, 3, 5)
Output Voltage (1, 2)
Output Current (1, 2, 5)
Output Current (1, 3, 6)
Reverse Output Voltage (1)
Reverse Output Current (1, 2)
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature (7)
ESD Sensitivity HBM (8)
ESD Sensitivity MM (9)
ESD Sensitivity CDM (10)
Symbol
VDD
VDD
IDD
IDD
VDDREV
VDDREV
IDDREV
IDDREV
VOUT
IOUT
IOUT
VOUTREV
IOUTREV
TA
TS
TJ
-
-
-
Value
+27
+32
+20
+50
-24
Units
V
V
mA
mA
V
-30 V
-20
-50
+27
+20
+75
-0.5
-50
-40 to +150
-55 to +165
+165
4000
500
1000
mA
mA
V
mA
mA
V
mA
C
C
C
V
V
V
Magnetic Flux Density
B Unlimited mT
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability.
1 The maximum junction temperature should not be exceeded
2 For maximum 1 hour
3 For maximum 0.5 s
4 Including current through protection device
5 Through protection device
6 For VOUT≤27V.
7 For 1000 hours.
8 Human Model according AEC-Q100-002 standard
9 Machine Model according AEC-Q100-003 standard
10 Charged Device Model according AEC-Q100-011 standard
390109221501
Rev. 001
Page 3 of 13
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MLX92215-AAA
3-Wire Hall Effect Latch
5 General Electrical Specifications
DC Operating Parameters TA = -40°C to 150°C, VDD = 2.7V to 24V (unless otherwise specified)
Parameter
Symbol Test Conditions
Min
Supply Voltage
Supply Current
Reverse Supply Current
VDD
IDD
IDDREV
Operating
VDD = -18V
2.7
1.5
Output Leakage Current
Output Saturation Voltage
Output Rise Time (2)
(RPU dependent)
Output Fall Time (2)
(On-chip controlled)
Chopping Frequency
Output Refresh Period (2)
Delay time (2,4)
IOFF
VDSon
tR
tF
fCHOP
tPER
tD
Output Jitter (p-p) (2, 5)
Maximum Switching Frequency
(2,6)
Power-On Time (7,8)
tJITTER
fSW
tON
VOUT = 12V, VDD = 12V, B < Brp
B > BOP, VDD = 3.8 to 18V, IOUT =
20mA
VDD = 12V, VPU(3) = 5V, RPU = 1kΩ
CLOAD = 50pF to GND
VDD = 12V, VPU = 5V, RPU = 1kΩ
CLOAD = 50pF to GND
0.1
0.1
Average over 1000 successive
switching events @10kHz, square
wave with B≥30mT, tRISE=tFALL≤20μs
Over 1000 successive switching
events @1kHz, square wave with
B≥30mT, tRISE=tFALL ≤100μs
B30mT and square wave magnetic
field
VDD = 5V, dVDD/dt > 2V/us
30
SE Package Thermal Resistance RTH
Single layer (1S) Jedec board
UA Package Thermal Resistance RTH
Table 1: Electrical specifications
Single layer (1S) Jedec board
Typ (1)
-
3.0
0.1
0.2
Max
24
4.5
1
10
0.5
Units
V
mA
mA
µA
V
0.3 1 µs
0.3 1 µs
340 kHz
6 µs
6 µs
±3 µs
50 kHz
16 35 μs
300 °C/W
200 °C/W
1 Typical values are defined at TA = +25°C and VDD = 12V, unless otherwise specified
2 Guaranteed by design and verified by characterization, not production tested
3 RPU and VPU are respectively the external pull-up resistor and pull-up power supply
4 The Delay Time is the time from magnetic threshold reached to the start of the output switching
5 Output jitter is the unpredictable deviation of the Delay time
6 Maximum switching frequency corresponds to the maximum frequency of the applied magnetic field which is detected without loss of pulses
7 The Power-On Time represents the time from reaching VDD = VPOR to the first refresh of the output (first valid output state)
8 Power-On Slew Rate is not critical for the proper device start-up
390109221501
Rev. 001
Page 4 of 13
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Datasheet
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MLX92215-AAA
3-Wire Hall Effect Latch
6 Magnetic Specifications
6.1 MLX92215LSE-AAA-000
DC Operating Parameters VDD = 3.8 to 24V, Ta = -40°C to 150°C
Test Condition
Operating Point
BOP (mT)
Min Typ(1) Max
Release Point
BRP (mT)
Min Typ(10) Max
TJ = -40°C
TJ = 25°C
TJ = 150°C
1 3.2
13
0.5 2.6
5 -5 -3.2 -1
5 -5 -3.0 -1
5 -5 -2.6 -0.5
6.2 MLX92215LUA-AAA-000
DC Operating Parameters VDD = 3.8 to 24V, Ta = -40°C to 150°C
Test Condition
TJ = -40°C
TJ = 25°C
TJ = 150°C
Operating Point
BOP (mT)
Min Typ(1) Max
1 3.2
5
13
5
0.5 2.6
5
Release Point
BRP (mT)
Min Typ(10) Max
-5 -3.2
-1
-5 -3.0
-1
-5 -2.6 -0.5
6.3 MLX92215LSE-ACA-000
DC Operating Parameters VDD = 3.8 to 24V, Ta = -40°C to 150°C
Test Condition
TJ = -40°C
TJ = 25°C
TJ = 150°C
Operating Point
BOP (mT)
Min Typ(1) Max
1.2 3.2 5.5
1.0 2.8 4.7
0.5 2.1 4.2
Release Point
BRP (mT)
Min Typ(10) Max
-5.5 -3.2 -1.2
-4.7 -2.8 -1.0
-4.2 -2.1 -0.5
TC
(ppm/oC)
Typ(1)
-1100
TC
(ppm/oC)
Typ(1)
-1100
TC
(ppm/oC)
Typ(1)
-2000
Active Pole
South Pole
Active Pole
South Pole
Active Pole
North Pole
7 Output Behaviour versus Magnetic Pole
7.1 South Pole Active
DC Operating Parameters TA = -40oC to 150oC, VDD = 2.7V to 24V (unless otherwise specified)
Parameter Test Conditions OUT
South pole
North pole
B > BOP
B < BRP
Low (VDSon)
High (VPU) (2)
1 Typical values are defined at TA = +25°C and VDD = 12V, unless otherwise specified
2 Default Output state during power-up
390109221501
Rev. 001
Page 5 of 13
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Datasheet
NOV/14