K12A65D.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 K12A65D 데이타시트 다운로드

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MOSFETs Silicon N-Channel MOS (π-MOS)
TK12A65D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.46 (typ.)
(2) High forward transfer admittance: |Yfs| = 6.0 S (typ.)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)
(4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK12A65D
1: Gate (G)
2: Drain (D)
3: Source (S)
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 650 V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
12 A
Drain current (pulsed)
(Note 1)
IDP
48
Power dissipation
(Tc = 25)
PD 50 W
Single-pulse avalanche energy
(Note 2)
EAS
611 mJ
Avalanche current
IAR 12 A
Repetitive avalanche energy
(Note 3)
EAR
5.0 mJ
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2010-09
1 2013-12-25
Rev.2.0

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5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25(initial), L = 7.5 mH, RG = 25 , IAR = 12 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature
TK12A65D
Symbol
Rth(ch-c)
Rth(ch-a)
Max Unit
2.5 /W
62.5
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2013-12-25
Rev.2.0

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6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
Symbol
Test Condition
IGSS
IDSS
V(BR)DSS
Vth
RDS(ON)
|Yfs|
VGS = ±30 V, VDS = 0 V
VDS = 650 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 6 A
VDS = 10 V, ID = 6 A
Min
650
2.0
1.7
6.2. Dynamic Characteristics (Ta = 25unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Ciss
Crss
Coss
tr
ton
tf
toff
Test Condition
VDS = 25 V, VGS = 0 V, f = 1 MHz
See Figure 6.2.1.
Min
TK12A65D
Typ. Max Unit
±1
10

4.0
0.46 0.54
6.0
µA
V
S
Typ.
2300
10
200
35
90
20
150
Max
Unit
pF
ns
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge
Gate-drain charge
Symbol
Qg
Test Condition
VDD 400 V, VGS = 10 V, ID = 12 A
Qgs
Qgd
Min Typ.
40
28
12
6.4. Source-Drain Characteristics (Ta = 25unless otherwise specified)
Max
Characteristics
Reverse drain current (DC)
Reverse drain current (pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(Note 1)
(Note 1)
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR1 = 12 A, VGS = 0 V
IDR = 12 A, VGS = 0 V
-dIDR/dt = 100 A/µs
Min Typ. Max
  12
  48
  -1.7
1400
16
Unit
nC
Unit
A
V
ns
µC
3 2013-12-25
Rev.2.0