P0610BT.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 P0610BT 데이타시트 다운로드

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NIKO-SEM
N-Channel Enhancement Mode
P0610BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
6.5mΩ
ID2
120A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
100
±20
120
76
375
39
770
208
83
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Package limitation current is 110A
TYPICAL
MAXIMUM
0.6
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNITS
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
100
VDS = VGS, ID = 250A
1.3 1.8 2.3
VDS = 0V, VGS = ±20V
±100
VDS = 80V, VGS = 0V
1
VDS = 80V, VGS = 0V, TJ = 125 °C
10
V
nA
A
REV 1.1
1
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NIKO-SEM
N-Channel Enhancement Mode
P0610BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
DYNAMIC
5.8 8
5.3 6.5
140
Input Capacitance
Ciss
6188
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
747
Reverse Transfer Capacitance
Crss
233
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.26
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =50V,ID = 20A
VDD = 50V,
ID 20A, VGS = 10V, RGEN =6Ω
121
64.2
15.8
30
20
60
55
57
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
120
1.2
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 20A, dIs/dt= 100A/μs
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 110A
58
136
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.1
2
E-41-4

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NIKO-SEM
N-Channel Enhancement Mode
P0610BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Output Characteristics
70
VGS=3V
56 VGS=10V
VGS=9V
VGS=8V
VGS=7V
42 VGS=6V
VGS=5V
VGS=4.5V
28 VGS=2.8V
14 VGS=2.7V
0
012345
VDS, Drain-To-Source Voltage(V)
6
On-Resistance VS Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8 VGS=10V
ID=20A
0.6
0.4
-50
-25 0
25 50 75 100 125
TJ , Junction Temperature(˚C)
150
Gate charge Characteristics
10 Characteristics
VDS=50V
8 ID=20A
6
4
2
0
0 24 48 72 96 120
Qg , Total Gate Charge(nC)
REV 1.1
3
Transfer Characteristics
70
56
42
28 25
125
-20
14
0
01234
VGS, Gate-To-Source Voltage(V)
5
Capacitance Characteristic
8000
7000
6000
CISS
5000
4000
3000
2000
1000
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
10
150
1
25
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
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