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NIKO-SEM
N-Channel Enhancement Mode
P0610BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
6.5mΩ
ID
66A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 ° C
TC = 100 ° C
L = 1mH
TC = 25 ° C
TC = 100 ° C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
1: GATE
2: DRAIN
3: SOURCE
LIMITS
100
±20
66
41
200
40
832
62.5
25
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
62.5
2
UNITS
°C/W
.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 ° C
VGS = 4.5V, ID = 20A
VGS =10V, ID = 20A
100
1.3
1.8 2.3
±100
1
10
68
5.4 6.5
V
nA
A
mΩ
REV 1.1
1
E-41-4

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NIKO-SEM
N-Channel Enhancement Mode
P0610BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Forward Transconductance1
gfs VDS = 5V, ID = 20A
DYNAMIC
133
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
6300
744
219
1.3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 50V , ID =20A
VDS = 50V , ID 20A,
VGS = 10V, RGEN =6Ω
120
63
19.5
38
21
61
54
58
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
Continuous Current
Forward Voltage1
IS
VSD IF = 20A, VGS = 0V
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
IF= 20A, dI/dt=100A/μs
65
176
52
1.2
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.1
2
E-41-4

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NIKO-SEM
N-Channel Enhancement Mode
P0610BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Output Characteristics
70
VGS=3.6V
Transfer Characteristics
70
56 56
VGS=3.5V
42 VGS=10V
VGS=9V
VGS=7V
VGS=5V
VGS=4.5V
28
42
28
VGS=3.3V
14 14
25
125
-20
0
012345
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8 VGS=10V
ID=20A
0.6
0.4
-50
-25 0 25 50 75 100 125
TJ , Junction Temperature(˚C)
Gate charge Characteristics
10
6
150
VDS=50V
8 ID=20A
0
0
8000
1234
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
5
6400
4800
CISS
3200
1600
COSS
CRSS
0
0 5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
6 10
4 150
25
1
2
0
0 24 48 72 96 120
Qg , Total Gate Charge(nC)
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
REV 1.1
3
E-41-4