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P0465AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
2.5Ω @VGS = 10V
ID
4A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current12
TC = 25 °C
TC = 100 °C
ID
IDM
4
2.5
7
Avalanche Energy3
EAS 20
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
26
10
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH ,starting TJ = 25˚ C.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
4.8 °C / W
REV 1.0
1 2013-12-4

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P0465AD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 650V, VGS = 0V , TC = 25 °C
VDS = 520V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 2A
VDS = 15V, ID = 2A
650
2.5
3.6 4.5
±100
25
250
2 2.5
3.1
V
nA
mA
Ω
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 520V, ID = 4A, VGS = 10V
VDD = 325V, ID = 4A, RG= 6Ω
766
55 pF
8
16.1
4.6 nC
5.6
23
26
nS
65
31
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 2A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4A, dlF/dt = 100A / μS
304
1.1
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4
1.5
A
V
nS
uC
REV 1.0
2 2013-12-4

No Preview Available !

P0465AD
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2013-12-4