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P0260AI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
4.6Ω @VGS = 10V
ID
2A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
EAS
2
1.3
7
2
20
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH, starting TJ = 25 °C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
62.5
UNITS
°C / W
REV 1.1
1 2014/8/11

No Preview Available !

P0260AI
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
600
2.5 3.1
4.5
V
±100 nA
Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
RDS(ON)
gfs
VDS = 600V, VGS = 0V , TC = 25 °C
VDS = 600V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 1A
VDS = 10V, ID = 1A
25
mA
250
4 4.6 Ω
1S
DYNAMIC
Input Capacitance
Ciss
315
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
46
Reverse Transfer Capacitance
Crss
11
Total Gate Charge2
Qg
10
Gate-Source Charge2
Qgs VDD = 480V, ID = 2A, VGS = 10V
2.3
Gate-Drain Charge2
Qgd
4.4
Turn-On Delay Time2
td(on)
14
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 300V, ID = 2A, RG=25Ω
28
29
Fall Time2
tf
33
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =2A, VGS = 0V
2
1.5
pF
nC
nS
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 2A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
344 nS
1.4 μC
REV 1.1
2 2014/8/11

No Preview Available !

P0260AI
N-Channel Enhancement Mode MOSFET
REV 1.1
3 2014/8/11