P0465CI
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
650
2.5 3.3 4.5
V
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±30V
±100 nA
Gate Voltage Drain Current
IDSS
VDS = 650V, VGS = 0V , TC = 25 °C
VDS =520V, VGS = 0V, TJ = 100°C
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 2A
2.1 2.6
Ω
Forward Transconductance1
gfs
VDS =15V, ID =2A
2.5 S
DYNAMIC
Input Capacitance
Ciss
512
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
52
Reverse Transfer Capacitance
Crss
12
Total Gate Charge2
Qg
13
Gate-Source Charge2
Qgs VDD = 520V, ID = 4A, VGS = 10V
3.8
Gate-Drain Charge2
Qgd
4.3
Turn-On Delay Time2
td(on)
27
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VGS = 0V , VDD = 350V,
ID = 4A, RG= 25Ω
59
90
Fall Time2
tf
74
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 4A, VGS = 0V
4
1
pF
nC
nS
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4A, dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
374 nS
2.1 mC
REV 1.0
2 2014-3-20
